NXP PMSS3906 Schematic [ru]

DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D187
PMSS3906
PNP switching transistor
Product data sheet Supersedes data of 1999 Apr 22
2004 Jan 09
NXP Semiconductors Product data sheet
PNP switching transistor PMSS3906

FEATURES

Low current (max. 100 mA)
Low voltage (max. 40 V).

QUICK REFERENCE DATA

SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
40 V
voltage

APPLICATIONS

Switching, e.g. telephony and professional
I
C
h
FE
collector current 100 mA
DC current gain 100 300
communication equipment.

DESCRIPTION

PNP switching transistor in an SOT323 (SC-70) plastic package. NPN complement: PMSS3904.

PRODUCT OVERVIEW

TYPE NUMBER
PACKAGE
MARKING CODE
(1)
NPN COMPLEMENT
PHILIPS EIAJ
PMSS3906 SOT323 SC-70 06* PMSS3904
Note
1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China.

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PIN DESCRIPTION
PMSS3906 1 base
handbook, halfpage
Top view
3
3
1
2
1
2
MAM048
2 emitter
3 collector
2004 Jan 09 2
NXP Semiconductors Product data sheet
PNP switching transistor PMSS3906

ORDERING INFORMATION

TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMSS3906 plastic surface mounted package; 3 leads SOT323

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter 40 V
collector-emitter voltage open base 40 V
emitter-base voltage open collector −5 V
collector current (DC) 100 mA
peak collector current 200 mA
peak base current 100 mA
total power dissipation T
25 °C; notes 1 and 2 200 mW
amb
storage temperature 65 +150 °C
junction temperature 150 °C
operating ambient temperature 65 +150 °C
Notes
1. Refer to standard mounting conditions.
2. Transistor mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient notes 1 and 2 625 K/W
Notes
1. Refer to standard mounting conditions.
2. Transistor mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2004 Jan 09 3
NXP Semiconductors Product data sheet
PNP switching transistor PMSS3906

CHARACTERISTICS

T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure IC = 100 µA; VCE = 5 V; RS = 1 k;
Switching times (between 10% and 90% levels); see Fig.1
t
on
t
d
t
r
t
off
t
s
t
f
collector-base cut-off current IE = 0; VCB = 30 V 50 nA
IE = 0; VCB = 30 V; Tj = 150 °C 10 µA
emitter-base cut-off current IC = 0; VEB = 5 V 50 nA
DC current gain VCE = 1 V
IC = 0.1 mA 60
IC = 1 mA 80
IC = 10 mA 100 300
IC = 50 mA; note 1 60
IC = 100 mA; note 1 30
collector-emitter saturation voltage
IC = 10 mA; IB = 1 mA 250 mV
IC = 50 mA; IB = 5 mA; note 1 400 mV
base-emitter saturation voltage IC = 10 mA; IB = 1 mA 850 mV
IC = 50 mA; IB = 5 mA; note 1 950 mV
collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz 4.5 pF
emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 14 pF
transition frequency IE = 10 mA; VCB = 20 V; f = 100 MHz 150 MHz
4 dB
f = 10 Hz to 15.7 kHz
turn-on time I
= 10 mA; I
Con
= 1 mA; I
Bon
= 1 mA 100 ns
Boff
delay time 50 ns
rise time 50 ns
turn-off time 700 ns
storage time 600 ns
fall time 100 ns
Note
1. Pulse test: tp 300 µs; δ 0.02.
2004 Jan 09 4
NXP Semiconductors Product data sheet
V
V
PNP switching transistor PMSS3906
handbook, full pagewidth
oscilloscope
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf 3 ns.
R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 Ω.
VBB = 1.9 V; VCC = 3 V.
Oscilloscope input impedance Zi = 50 Ω.
BB
R
(probe)
450
V
i
B
R2
R1
CC
R
C
V
o
DUT
Fig.1 Test circuit for switching times.
(probe)
MGD624
450
oscilloscope
2004 Jan 09 5
NXP Semiconductors Product data sheet
3
PNP switching transistor PMSS3906

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT32
D
y
3
A
12
e
b
1
p
e
B
w
M
E
AB
X
H
E
Q
A
1
L
p
detail X
v
M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.8
OUTLINE VERSION
SOT323 SC-70
max
0.1
b
cD
p
0.4
0.25
0.10
2.2
1.8
0.3
IEC JEDEC JEITA
E
1.35
1.3
1.15
REFERENCES
e
e1H
0.65
2.2
2.0
L
Qwv
p
E
0.45
0.15
0.23
0.13
0.20.2
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04 06-03-16
2004 Jan 09 6
NXP Semiconductors Product data sheet
PNP switching transistor PMSS3906

DATA SHEET STATUS

DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

DISCLAIMERS

General Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
(1)
PRODUCT STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions
2004 Jan 09 7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R75/04/pp8 Date of release: 2004 Jan 09 Document order number: 9397 750 12329
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