NXP PMBTA42, PMBTA42 Schematic [ru]

DISCRETE SEMICONDUCTORS

DATA SH EET

PMBTA42

NPN high-voltage transistor

Product specification
Supersedes data of 1999 Apr 22

2004 Jan 22

Philips Semiconductors Product specification

NPN high-voltage transistor PMBTA42

FEATURES

• Low current (max. 100 mA)

• High voltage (max. 300 V).

APPLICATIONS

• Telephony and professional communication equipment.

DESCRIPTION

NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: PMBTA92.

MARKING

TYPE NUMBER MARKING CODE

(1)

PMBTA42 *1D

Note

1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

3

21

MAM255

Fig.1 Simplified outline (SOT23) and symbol.

3

1

2

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

PMBTA42 − plastic surface mounted package; 3 leads SOT23

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
I
P
T
T
T

CBO
CEO

EBO
C
CM
BM

tot

stg

j

amb

collector-base voltage open emitter − 300 V
collector-emitter voltage open base − 300 V
emitter-base voltage open collector − 6V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004 Jan 22 2