NXP PMBT2907, PMBT2907A Schematic [ru]
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
PMBT2907; PMBT2907A
PNP switching transistors
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 16
NXP Semiconductors Product data sheet
PNP switching transistors
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
complements: PMBT2222 and PMBT2222A.
NPN
MARKING
T YPE NUMBER MARKING CODE
PMBT2907 *2B
PMBT2907A *2F
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
(1)
PMBT2907;
PMBT2907A
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
Fig.1 Simplified outline (SOT23) and symbol.
3
21
MAM256
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PMBT2907 − plastic surface mounted package; 3 leads SOT23
PMBT2907A − plastic surface mounted package; 3 leads SOT23
2004 Jan 16 2
NXP Semiconductors Product data sheet
PNP switching transistors PMBT2907; PMBT2907A
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −60 V
collector-emitter voltage open base
PMBT2907 − −40 V
PMBT2907A − −60 V
emitter-base voltage open collector − −5 V
collector current (DC) − −600 mA
peak collector current − −800 mA
peak base current − −200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16 3
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