NXP PMBT2907, PMBT2907A Schematic [ru]

DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D088

PMBT2907; PMBT2907A

PNP switching transistors

Product data sheet Supersedes data of 1999 Apr 27

2004 Jan 16

NXP Semiconductors Product data sheet

PNP switching transistors

FEATURES

• High current (max. 600 mA)

• Low voltage (max. 60 V).

APPLICATIONS

• Switching and linear amplification.

DESCRIPTION

PNP switching transistor in a SOT23 plastic package.

complements: PMBT2222 and PMBT2222A.

NPN

MARKING

T YPE NUMBER MARKING CODE

PMBT2907 *2B PMBT2907A *2F

Note

1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W: Made in China.

(1)

PMBT2907;

PMBT2907A

PINNING

PIN DESCRIPTION

1 base 2 emitter 3 collector

handbook, halfpage

Top view

Fig.1 Simplified outline (SOT23) and symbol.

MAM256

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

PMBT2907 − plastic surface mounted package; 3 leads SOT23 PMBT2907A − plastic surface mounted package; 3 leads SOT23

2004 Jan 16 2

NXP Semiconductors Product data sheet

PNP switching transistors PMBT2907; PMBT2907A

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V V

V I I I P T T T

CBO CEO

EBO C CM BM

tot

stg

amb

collector-base voltage open emitter − −60 V collector-emitter voltage open base

PMBT2907 − −40 V

PMBT2907A − −60 V emitter-base voltage open collector − −5 V collector current (DC) − −600 mA peak collector current − −800 mA peak base current − −200 mA total power dissipation T

≤ 25 °C − 250 mW

amb

storage temperature −65 +150 °C junction temperature − 150 °C operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th(j-a)

thermal resistance from junction to ambient note 1 500 K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004 Jan 16 3

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