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PMBS3906
Schematic [ru]
8 pgs107.3 Kb0
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NXP PMBS3906 Schematic [ru]

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DATA SH EET
DISCRETE SEMICONDUCTORS
PMBS3906
PNP general purpose transistor
Product data sheet Supersedes data of 1999 Apr 22
2004 Feb 02
NXP Semiconductors Product data sheet
PNP general purpose transistor PMBS3906

FEATURES

• Low current (max. 100 mA)
• Low voltage (max. 40 V).

APPLICATIONS

• General purpose switching and amplification, e.g. telephony and professional communication equipment.

DESCRIPTION

PNP transistor in a SOT23 plastic package.
complement: PMBS3904.
NPN

MARKING

T YPE NUMBER MARKING CODE
PMBS3906 *O6
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia. * = W : Made in China.
(1)

PINNING

PIN DESCRIPTION
1 base 2 emitter 3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2

ORDERING INFORMATION

TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PMBS3906 − plastic surface mounted packag e; 3 leads SOT23

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V V I I I P T T T
CBO CEO EBO
C CM BM
tot stg j amb
collector-base voltage open emitter − −40 V collector-emitter voltage open base − −40 V emitter-base voltage open collector − −5 V collector current capability − −100 mA peak collector current − −200 mA peak base current − −200 mA total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C junction temperature − 150 °C operating ambient temperature −65 +150 °C
NXP Semiconductors Product data sheet
PNP general purpose transistor PMBS3906

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure IC = −100 µA; VCE = −5 V; RS = 1 kΩ;
Switching times (between 10% and 90% levels); (see Fig.3) t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE = 0; VCB = −30 V − −50 nA emitter cut-off current IC = 0; VEB = −5 V − −50 nA DC current gain VCE = −1 V; (see Fig.2)
IC = −0.1 mA 60 − IC = −1 mA 80 − IC = −10 mA 100 300 IC = −50 mA; note 1 60 − IC = −100 mA; note 1 30 −
collector-emitter saturation voltage IC = −10 mA; IB = −1 mA − −250 mV
IC = −50 mA; IB = −5 mA; note 1 − −400 mV
base-emitter saturation vo ltage IC = −10 mA; IB = −1 mA − −850 mV
IC = −50 mA; IB = −5 mA; note 1 − −950 mV collector capacitance IE = ie = 0; VCB = −5 V; f = 100 MHz − 4.5 pF emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 100 MHz − 12 pF transition frequency IC = −10 mA; VCE = −20 V;
f
= 100 MHz
150 − MHz
− 4 dB
= 10 Hz to 15.7 kHz
f
turn-on time I delay time − 50 ns
= −10 mA; I
Con
I
= 1 mA
Boff
= −1 mA;
Bon
− 100 ns
rise time − 50 ns turn-off time − 700 ns storage time − 600 ns fall time − 100 ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
V
V
PNP general purpose transistor PMBS3906
300
handbook, full pagewidth
h
FE
200
100
0
−1
−10
−1
−10 −10
Fig.2 DC current gain; typical values.
VCE = −5 V
−10
MBH726
2
IC (mA)
3
handbook, full pagewidth
oscilloscope
Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = 3 V. Oscilloscope input impedance Zi = 50 Ω.
BB
R
(probe)
450 Ω
V
i
B
R2
R1
CC
R
C
V
(probe)
o
DUT
MGD624
450 Ω
oscilloscope
Fig.3 Test circuit for switching times.
NXP Semiconductors Product data sheet
3
PNP general purpose transistor PMBS3906

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w
M
B
E
H
E
detail X
AB
Q
L
p
X
v
M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE VERSION
SOT23 TO-236AB
max.
0.1
b
cD
p
0.48
0.15
0.09
3.0
2.8
0.38
IEC JEDEC JEITA
e
E
1.4
1.9
1.2
REFERENCES
0.95
e
H
L
Qwv
1
2.5
2.1
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04 06-03-16
NXP Semiconductors Product data sheet
PNP general purpose transistor PMBS3906

DATA SHEET STATUS

DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be su itable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveya nce or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC the device. Limiting values are stress ratings only an d operation of the device at these or any other conditions
60134) may cause permanent damage to
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccur ate a nd re li a ble and may be change d without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industri al or intellectual property right s.
Printed in The Netherlands R75/05/pp7 Date of release: 2004 Feb 02 Document order number: 9397 750 12456
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