NXP PMBS3906 Schematic [ru]
DATA SH EET
DISCRETE SEMICONDUCTORS
PMBS3906
PNP general purpose transistor
Product data sheet
Supersedes data of 1999 Apr 22
2004 Feb 02
NXP Semiconductors Product data sheet
PNP general purpose transistor PMBS3906
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• General purpose switching and amplification, e.g.
telephony and professional communication equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
complement: PMBS3904.
NPN
MARKING
T YPE NUMBER MARKING CODE
PMBS3906 *O6
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PMBS3906 − plastic surface mounted packag e; 3 leads SOT23
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −40 V
collector-emitter voltage open base − −40 V
emitter-base voltage open collector − −5 V
collector current capability − −100 mA
peak collector current − −200 mA
peak base current − −200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2004 Feb 02 2
NXP Semiconductors Product data sheet
PNP general purpose transistor PMBS3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure IC = −100 µA; VCE = −5 V; RS = 1 kΩ;
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE = 0; VCB = −30 V − −50 nA
emitter cut-off current IC = 0; VEB = −5 V − −50 nA
DC current gain VCE = −1 V; (see Fig.2)
IC = −0.1 mA 60 −
IC = −1 mA 80 −
IC = −10 mA 100 300
IC = −50 mA; note 1 60 −
IC = −100 mA; note 1 30 −
collector-emitter saturation voltage IC = −10 mA; IB = −1 mA − −250 mV
IC = −50 mA; IB = −5 mA; note 1 − −400 mV
base-emitter saturation vo ltage IC = −10 mA; IB = −1 mA − −850 mV
IC = −50 mA; IB = −5 mA; note 1 − −950 mV
collector capacitance IE = ie = 0; VCB = −5 V; f = 100 MHz − 4.5 pF
emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 100 MHz − 12 pF
transition frequency IC = −10 mA; VCE = −20 V;
f
= 100 MHz
150 − MHz
− 4 dB
= 10 Hz to 15.7 kHz
f
turn-on time I
delay time − 50 ns
= −10 mA; I
Con
I
= 1 mA
Boff
= −1 mA;
Bon
− 100 ns
rise time − 50 ns
turn-off time − 700 ns
storage time − 600 ns
fall time − 100 ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Feb 02 3
Loading...