NXP PLVA650A, PLVA653A, PLVA656A, PLVA659A, PLVA662A Schematic [ru]

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DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
PLVA6xxA series
Low-voltage avalanche regulator diodes
Product data sheet Supersedes data of 1999 May 25
2004 Jan 14
NXP Semiconductors Product data sheet
Top view
Low-voltage avalanche regulator diodes PLVA6xxA series

FEATURES

Very low dynamic impedance at low currents:
1
approximately
of conventional series
20
Hard breakdown knee
Low noise: approximately
1
of conventional series
10
Total power dissipation: max. 250 mW
Small tolerances of V
Z
Working voltage range: nominal 5.00 to 6.80 V
Non-repetitive peak reverse power dissipation:
maximal
30 W.

APPLICATIONS

Low current, low power, low noise applications
CMOS RAM back-up circuits
Voltage stabilizers
Voltage limiters
Smoke detector relays.

DESCRIPTION

High performance voltage regulator diodes in small SOT23 plastic SMD packages.

PINNING

PIN DESCRIPTION
1 anode 2 not connected 3 cathode
handbook, halfpage
21
2
n.c.
3
Fig.1 Simplified outline (SOT23) and symbol.
1
3
MAM243
The series consists of PLVA650A to PLVA668A.

MARKING

TYPE NUMBER MARKING CODE
PL VA650A *9A PL VA653A *9B PL VA656A *9C PL VA659A *9D PL VA662A *9E PL VA665A *9F PL VA668A *9G
Note
1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China.
(1)
2004 Jan 14 2
NXP Semiconductors Product data sheet
Low-voltage avalanche regulator diodes PLVA6xxA series

ORDERING INFORMATION

TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PLVA6xxA plastic surface mounted package; 3 leads SOT23

LIMITING VALUES

In accordance with the Absolute Maximum Rating Sys tem (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZRM
P P T T
ZSM tot stg j
continuous forward current 250 mA repetitive peak working current tp = 100 μs; δ = 10% 250 mA non-repetitive peak reverse power dissipation tp = 100 μs; Tj = 150 °C 30 W total power dissipation T
= 25 °C; note 1 250 mW
amb
storage temperature −65 +150 °C junction temperature 150 °C
Note
1. Device mounted on an FR4 printed circuit-board.
2004 Jan 14 3
NXP Semiconductors Product data sheet
Low-voltage avalanche regulator diodes PLVA6xxA series

ELECTRICAL CHARACTERISTICS

Tj = 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
Z
V
Z
R
Z
S
Z
I
R
forward voltage IF = 10 mA 0.9 V working voltage IZ = 250 μA
PLVA650A 4.80 5.00 5.20 V PLVA653A 5.10 5.30 5.50 V PLVA656A 5.40 5.60 5.80 V PLVA659A 5.70 5.90 6.10 V PLVA662A 6.00 6.20 6.40 V PLVA665A 6.30 6.50 6.70 V PLVA668A 6.60 6.80 7.00 V
working voltage IZ = 10 μA
PLVA650A 4.30 V PLVA653A 5.20 V PLVA656A 5.51 V PLVA659A 5.85 V PLVA662A 6.19 V PLVA665A 6.49 V PLVA668A 6.80 V
dynamic resistance 1 kHz superimposed;
is 10% of I
I
PLVA650A 700 Ω
ZAC
; IZ = 250 μA
ZDC
PLVA653A 250 Ω PLVA656A to PLVA668A 100 Ω
temperature coefficient IZ = 250 μA
PLVA650A 0.20 mV/K PLVA653A 1.60 mV/K PLVA656A 1.90 mV/K PLVA659A 2.40 mV/K PLVA662A 2.65 mV/K PLVA665A 2.90 mV/K PLVA668A 3.40 mV/K
reverse current VR = 80% VZ nominal
PLVA650A 20 000 nA PLVA653A 5 000 nA PLVA656A 1 000 nA PLVA659A 500 nA PLVA662A 100 nA PLVA665A 50 nA PLVA668A 10 nA
2004 Jan 14 4
NXP Semiconductors Product data sheet
Low-voltage avalanche regulator diodes PLVA6xxA series
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
I
R
ΔV
V
Z
n
reverse current VR = 50% VZ nominal
PLVA650A 34 nA PLVA653A 22 nA PLVA656A 1.1 nA PLVA659A 0.9 nA PLVA662A 0.9 nA PLVA665A 0.9 nA PLVA668A 0.8 nA
reverse current VR = 90% VZ nominal
PLVA650A 21 μA PLVA653A 3.5 μA PLVA656A 1.3 μA PLVA659A 1.0 μA PLVA662A 0.05 μA PLVA665A 0.04 μA PLVA668A 0.006 μA
line regulation
PLVA659A to PLVA668A ILO = 10 μA; IHI = 1 mA 0.1 V PLVA656A ILO = 50 μA; IHI = 1 mA 0.1 V PLVA650A ILO = 100 μA; IHI = 1 mA 0.4 V PLVA653A ILO = 100 μA; IHI = 1 mA 0.2 V
noise voltage density f = 1 kHz; B = 1 kHz; IZ = 250 μA 1.0
μV
----------- ­Hz

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th(j-tp) th(j-a)
thermal resistance from junction to tie-point 330 K/W thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed circuit-board.
2004 Jan 14 5
NXP Semiconductors Product data sheet
3
Low-voltage avalanche regulator diodes PLVA6xxA series

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w
M
B
E
H
E
detail X
AB
Q
L
p
X
v
M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE VERSION
SOT23 TO-236AB
max.
0.1
b
cD
p
0.48
0.15
0.38
0.09
IEC JEDEC JEITA
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
e
0.95
H
L
Qwv
1
2.5
2.1
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04 06-03-16
2004 Jan 14 6
NXP Semiconductors Product data sheet
Low-voltage avalanche regulator diodes PLVA6xxA series

DATA SHEET STATUS

DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS General Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be su itable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modificati on .
(1)
PRODUCT STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveya nce or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC the device. Limiting values are stress ratings only an d operation of the device at these or any other conditions
2004 Jan 14 7
60134) may cause permanent damage to
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccur ate a nd re li a ble and may be change d without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industri al or intellectual property rights.
Printed in The Netherlands R76/03/pp8 Date of release: 2004 Jan 14 Document order number: 9397 750 12445
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