NXP PDTC143XE, PDTC143XEF, PDTC143XK, PDTC143XM, PDTC143XS Schematic [ru]

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PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

Rev. 10 — 16 November 2009 Product data sheet

1. Product profile

1.1 General description

NPN Resistor-Equipped Transistors (RET) family.

Ta ble 1. Product overview

Type number Package PNP complement

PDTC143XE SOT416 SC-75 - PDTA143XE PDTC143XEF SOT490 SC-89 - PDTA143XEF PDTC143XK SOT346 SC-59A TO-236 PDTA143XK PDTC143XM SOT883 SC-101 - PDTA143XM PDTC143XS PDTC143XT SOT23 - TO-236AB PDTA143XT PDTC143XU SOT323 SC-70 - PDTA143XU

NXP JEITA JEDEC

[1]

SOT54 SC-43A TO-92 PDT A143XS

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

 Built-in bias resistors  Reduces component count  Simplifies circuit design  Reduces pick and place costs  100 mA output current capability

1.3 Applications

 Digital applications  Cost-saving alternative for BC847 series

in digital applications

 Controlling IC inputs  Switching loads

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ R2/R1 bias resistor ratio 1.7 2.1 2.6

collector-emitter voltage open base - - 50 V output current - - 100 mA

NXP Semiconductors

2. Pinning information

Ta ble 3. Pinning

Pin Description Simplified outline Symbol

SOT54

1 input (base) 2 output (collector) 3 GND (emitter)

SOT54A

1 input (base) 2 output (collector) 3 GND (emitter)

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

001aab34

1 2 3

006aaa145

1 2

006aaa145

SOT54 variant

1 input (base) 2 output (collector) 3 GND (emitter)

SOT23; SOT323; SOT346; SOT416; SOT490

1 input (base) 2 GND (emitter) 3 output (collector)

SOT883

1 input (base) 2 GND (emitter) 3 output (collector)

1 2 3

001aab44

006aaa14

Transparent

top view

006aaa145

sym007

Product data sheet Rev. 10 — 16 November 2009 2 of 12

NXP Semiconductors

3. Ordering information

Table 4. Ordering information

Type number Package

PDTC143XE SC-75 plastic surface mounted package; 3 leads SOT416 PDTC143XEF SC-89 plastic surface mounted package; 3 leads SOT490 PDTC143XK SC-59A plastic surface mounted package; 3 leads SOT346 PDTC143XM SC-101 leadless ultra small plastic package; 3 solder lands;

PDTC143XS

PDTC143XT - plastic surface mounted package; 3 leads SOT23 PDTC143XU S C-70 plastic surface mounted package; 3 leads SOT323

[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

[1]

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

Name Description Version

SOT883

body 1.0 × 0.6 × 0.5 mm

SC-43A plastic single-ended leaded (through hole) package;

3 leads

SOT54

4. Marking

Table 5. Marking codes

Type number Marking code

PDTC143XE 34 PDTC143XEF 54 PDTC143XK 26 PDTC143XM E2 PDTC143XS TC143X PDTC143XT *32 PDTC143XU *53

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

[1]

Product data sheet Rev. 10 — 16 November 2009 3 of 12

NXP Semiconductors

5. Limiting values

Ta ble 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

stg

amb

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

collector-base voltage open emitter - 50 V collector-emitter voltage open base - 50 V emitter-base voltage open collector - 7 V input voltage

positive - +20 V

negative - −7V output current - 100 mA peak collector current single pulse;

≤ 1ms

total power dissipation T

amb

≤ 25 °C SOT416 SOT490 SOT346 SOT883 SOT54 SOT23 SOT323

storage temperature −65 +150 °C junction temperature - 150 °C ambient temperature −65 +150 °C

-100mA

[1]

-150mW

[1][2]

-250mW

[1]

-250mW

[2][3]

-250mW

[1]

-500mW

[1]

-250mW

[1]

-200mW

Product data sheet Rev. 10 — 16 November 2009 4 of 12

NXP Semiconductors

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

thermal resistance from junction to ambient

SOT416 SOT490 SOT346 SOT883 SOT54 SOT23 SOT323

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

in free air

[1]

--833K/W

[1][2]

--500K/W

[1]

--500K/W

[2][3]

--500K/W

[1]

--250K/W

[1]

--500K/W

[1]

--625K/W

7. Characteristics

Ta ble 8. Characteristics

amb

Symbol Parameter Conditions Min Typ Max Unit

CBO

CEO

EBO

CEsat

I(off)

I(on)

R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ R2/R1 bias resistor ratio 1.7 2.1 2.6 C

=25°C unless otherwise specified.

collector-base cut-off

VCB=50V; IE= 0 A - - 100 nA

current collector-emitter

cut-off current

VCE=30V; IB=0A - - 1 μA

=30V; IB=0A;

--50μA

Tj=150°C

emitter-base cut-off

VEB=5V; IC= 0 A - - 600 μA

current DC current gain VCE=5V; IC=10mA 50 - collector-emitter

IC=10mA; IB= 0.5 mA - - 100 mV

saturation voltage off-state input voltage VCE=5V; IC=100μA--0.3V on-state input voltage VCE= 300 mV; IC=20mA 2.5 - - V

collector capacitance VCB=10V; IE=ie=0A;

--2.5pF

f=1MHz

Product data sheet Rev. 10 — 16 November 2009 5 of 12

NXP Semiconductors

006aaa178

006aaa179

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

−1

(2)

(1)

(3)

101

IC (mA)

VCE=5V

amb amb amb

= 100 °C =25°C = −40 °C

(1) T (2) T (3) T

Fig 1. DC current gain as a function of collector

current; typical values

006aaa180

CEsat

(mV)

110

=20

C/IB

amb amb amb

= 100 °C =25°C = −40 °C

(1) T (2) T (3) T

(2)

(1)

(3)

IC (mA)

Fig 2. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa181

I(on)

(V)

(2)

(1)

−1

VCE=0.3V (1) T (2) T (3) T

−1

amb amb amb

= −40 °C =25°C = 100 °C

(3)

101

IC (mA)

Fig 3. On-state input voltage as a function of

collector current; typical values

I(off)

(V)

−1

(1) T (2) T (3) T

−2

CE amb amb amb

=5V

= −40 °C =25°C = 100 °C

(1)

(2)

(3)

−1

IC (mA)

10110

Fig 4. Off-state input voltage as a function of

collector current; typical values

Product data sheet Rev. 10 — 16 November 2009 6 of 12

NXP Semiconductors

8. Package outline

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

1.3

1.0

0.26

0.10

04-11-11Dimensions in mm

1.75

1.45

1.8

1.4

0.9

0.7

0.30

0.15

0.45

0.15

0.95

0.60

0.25

0.10

3.1

2.7

3.0

1.7

2.5

1.3

1.9

04-11-04Dimensions in mm

0.50

0.35

0.6

0.2

Fig 5. Package outline SOT416 (SC-75) Fig 6. Package outline SOT346 (SC-59A/TO-236)

0.62

0.30

0.22

0.30

0.22

0.55

0.47

0.65

0.50

0.46

1.02

0.95

4.2

3.6

4.8

4.4

0.45

0.38

0.48

0.40

1 2

1.27

2.54

0.20

0.12

0.35

03-04-03Dimensions in mm

5.2

5.0

14.5

12.7

04-11-16Dimensions in mm

Fig 7. Package outline SOT883 (SC-101) Fig 8. Package outline SOT54 (SC-43A/TO-92)

0.45

0.38

1.27

0.48

0.40

1 2 3

1.27

2.54

05-01-10Dimensions in mm

4.2

3.6

4.8

4.4

5.2

5.0

3 max

14.5

12.7

0.45

0.38

0.48

0.40

5.08

2.54

04-06-28Dimensions in mm

4.2

3.6

4.8

4.4

5.2

5.0

2.5

max

14.5

12.7

Fig 9. Package outline SOT54A Fig 10. Package outline SOT54 var iant

Product data sheet Rev. 10 — 16 November 2009 7 of 12

NXP Semiconductors

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

2.5

2.1

3.0

2.8

0.45

0.15

1.4

1.2

0.48

1.9

0.38

1.1

0.9

0.15

0.09

2.2

1.8

0.4

0.3

0.45

0.15

2.2

1.35

2.0

1.15

1.3

04-11-04Dimensions in mm

Fig 11. Package outline SOT23 (TO-236AB) Fig 12. Package outline SOT323 (SC-70)

1.7

1.5

0.95

0.75

1.7

1.5

0.5

0.3

0.8

0.6

1.1

0.8

0.25

0.10

04-11-04Dimensions in mm

Fig 13. Package outline SOT490 (SC-89)

0.33

0.23

0.2

0.1

98-10-23Dimensions in mm

Product data sheet Rev. 10 — 16 November 2009 8 of 12

NXP Semiconductors

9. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PDTC143XE SOT416 4 mm pitch, 8 mm tape and reel -115 - - -135 PDTC143XEF SOT490 4 mm pitch, 8 mm tape and reel - -115 - PDTC143XK SOT346 4 mm pitch, 8 mm tape and reel -115 - - -135 PDTC143XM SOT883 2 mm pitch, 8 mm tape and reel - - - -315 PDTC143XS SOT54 bulk, straight leads - - - 412 -

PDTC143XT SOT23 4 mm pitch, 8 mm tape and reel -215 - - -235 PDTC143XU SOT 323 4 mm pitch, 8 mm tape and reel -115 - - -135

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

[1]

3000 4000 5000 10000

SOT54A tape and reel, wide pitch - - - -116

tape ammopack, wide pitch - - - -126

SOT54 variant bulk, delta pinning - - -112 -

[1] For further information and the availability of packing methods, see Section 12.

Product data sheet Rev. 10 — 16 November 2009 9 of 12

NXP Semiconductors

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTC143X_SER_10 20091116 Product data sheet - PDTC143X_SER_9 Modifications:

PDTC143X_SER_9 20050726 Product data sheet - PDTC143X_SERIES_8 PDTC143X_SERIES_8 20040806 Product specification - PDTC143X_SERIES_7 PDTC143X_SERIES_7 20040323 Product specification - PDTC143X_SERIES_6 PDTC143X_SERIES_6 20040112 Product specification - PDTC143X_SERIES_5 PDTC143X_SERIES_5 20031112 Product specification - PDTC143X_SERIES_4 PDTC143X_SERIES_4 20030910 Product specification - PDTC143X_SERIES_3 PDTC143X_SERIES_3 20030410 Product specification - PDTC143XE_2

PDTC143XE_2 19990521 Product specification - PDTC143XE_1 PDTC143XE_1 19980529 Product specification - PDTC143XK_1 20020115 Product specification - PDTC143XT_1 19990420 Product specification - -

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical content.

PDTC143XK_1 PDTC143XT_1

Product data sheet Rev. 10 — 16 November 2009 10 of 12

NXP Semiconductors

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

11. Legal information

11.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

, including those pertaining to warranty,

11.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 10 — 16 November 2009 11 of 12

NXP Semiconductors

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 5

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Packing information . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Contact information. . . . . . . . . . . . . . . . . . . . . 11

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

PDTC143X series

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 16 November 2009

Document identifier: PDTC143X_SER_10

NXP PDTC143XE, PDTC143XEF, PDTC143XK, PDTC143XM, PDTC143XS Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1. Product profile

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Package outline

9. Packing information

10. Revision history

11. Legal information

11.1 Data sheet status

11.2 Definitions

11.3 Disclaimers

11.4 Trademarks

12. Contact information

13. Contents