NXP PDTC143XE, PDTC143XEF, PDTC143XK, PDTC143XM, PDTC143XS Schematic [ru]
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PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
Rev. 10 — 16 November 2009 Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistors (RET) family.
Ta ble 1. Product overview
Type number Package PNP complement
PDTC143XE SOT416 SC-75 - PDTA143XE
PDTC143XEF SOT490 SC-89 - PDTA143XEF
PDTC143XK SOT346 SC-59A TO-236 PDTA143XK
PDTC143XM SOT883 SC-101 - PDTA143XM
PDTC143XS
PDTC143XT SOT23 - TO-236AB PDTA143XT
PDTC143XU SOT323 SC-70 - PDTA143XU
NXP JEITA JEDEC
[1]
SOT54 SC-43A TO-92 PDT A143XS
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
Built-in bias resistors Reduces component count
Simplifies circuit design Reduces pick and place costs
100 mA output current capability
1.3 Applications
Digital applications Cost-saving alternative for BC847 series
in digital applications
Controlling IC inputs Switching loads
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6
collector-emitter voltage open base - - 50 V
output current - - 100 mA
NXP Semiconductors
7
8
7
4
2. Pinning information
Ta ble 3. Pinning
Pin Description Simplified outline Symbol
SOT54
1 input (base)
2 output (collector)
3 GND (emitter)
SOT54A
1 input (base)
2 output (collector)
3 GND (emitter)
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
2
R2
3
2
R2
3
001aab34
001aab34
R1
1
1
2
3
006aaa145
R1
1
1
2
3
006aaa145
SOT54 variant
1 input (base)
2 output (collector)
3 GND (emitter)
SOT23; SOT323; SOT346; SOT416; SOT490
1 input (base)
2 GND (emitter)
3 output (collector)
SOT883
1 input (base)
2 GND (emitter)
3 output (collector)
1
2
3
001aab44
3
12
006aaa14
1
2
Transparent
top view
3
R1
1
006aaa145
R1
1
sym007
R1
1
sym007
2
R2
3
3
R2
2
3
R2
2
PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 10 — 16 November 2009 2 of 12
NXP Semiconductors
3. Ordering information
Table 4. Ordering information
Type number Package
PDTC143XE SC-75 plastic surface mounted package; 3 leads SOT416
PDTC143XEF SC-89 plastic surface mounted package; 3 leads SOT490
PDTC143XK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC143XM SC-101 leadless ultra small plastic package; 3 solder lands;
PDTC143XS
PDTC143XT - plastic surface mounted package; 3 leads SOT23
PDTC143XU S C-70 plastic surface mounted package; 3 leads SOT323
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
[1]
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
Name Description Version
SOT883
body 1.0 × 0.6 × 0.5 mm
SC-43A plastic single-ended leaded (through hole) package;
3 leads
SOT54
4. Marking
Table 5. Marking codes
Type number Marking code
PDTC143XE 34
PDTC143XEF 54
PDTC143XK 26
PDTC143XM E2
PDTC143XS TC143X
PDTC143XT *32
PDTC143XU *53
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
[1]
PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 10 — 16 November 2009 3 of 12
NXP Semiconductors
5. Limiting values
Ta ble 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
V
I
I
O
I
CM
P
tot
T
stg
T
j
T
amb
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 7 V
input voltage
positive - +20 V
negative - −7V
output current - 100 mA
peak collector current single pulse;
≤ 1ms
t
p
total power dissipation T
amb
≤ 25 °C
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
-100mA
[1]
-150mW
[1][2]
-250mW
[1]
-250mW
[2][3]
-250mW
[1]
-500mW
[1]
-250mW
[1]
-200mW
PDTC143X_SER_10 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 10 — 16 November 2009 4 of 12
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