DATA SH EET
DISCRETE SEMICONDUCTORS
PDTC143T series
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
Product data sheet
Supersedes data of 2004 Apr 06
2004 Aug 06
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit applications.
PRODUCT OVERVIEW
PACKAGE
T YPE NUMBER
PHILIPS EIAJ
PDTC143TE SOT416 SC-75 40 PDTA143TE
PDTC143TEF SOT490 SC-89 11 PDTA143TEF
PDTC143TK SOT346 SC-59 52 PDTA143TK
PDTC143TM SOT883 SC-101 DM PDTA143TM
PDTC143TS SOT54 (TO-92) SC-43 TC143T PDTA143TS
PDTC143TT SOT23 − *33
PDTC143TU SOT323 SC-70 *52
QUICK REFERENCE DATA
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
I
O
R1 bias resistor 4.7 − kΩ
R2 open − − −
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
collector-emitter
voltage
output current (DC) − 100 mA
MARKING CODE PNP COMPLEMENT
(1)
(1)
− 50 V
PDTA143TT
PDTA143TU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 06 2
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
T YPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PDTC143TS 1 base
handbook, halfpage
1
2
3
MAM361
R1
1
2
3
PDTC143TE 1 base
PDTC143TEF 2 emitter
PDTC143TK 3 collector
handbook, halfpage
PDTC143TT
3
R1
1
3
PDTC143TU
1
Top view
2
MDB270
2
PINNING
PIN DESCRIPTION
2 collector
3 emitter
PDTC143TM 1 base
2 emitter
handbook, halfpage
2
1
Bottom view
3
MHC507
R1
1
3
2
3 collector
2004 Aug 06 3
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
ORDERING INFORMATION
TYPE NUMBER
NAME DESCRIPTION VERSION
PDTC143TE − plastic surface mounted package; 3 leads SOT416
PDTC143TEF − plastic surface mounted package; 3 leads SOT490
PDTC143TK − plastic surface mounted package; 3 leads SOT346
PDTC143TM − leadless ultra small plastic package; 3 solder lands; body
× 0.6 × 0.5 mm
1.0
PDTC143TS − plastic single-ended leaded (through hole) package; 3 leads SOT54
PDTC143TT − plastic surface mounted package; 3 leads SOT23
PDTC143TU − plastic surface mounted package; 3 leads SOT323
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
P
CBO
CEO
EBO
O
CM
tot
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5 V
output current (DC) − 100 mA
collector current − 100 mA
total power dissipation T
amb
≤ 25 °C
SOT54 note 1 − 500 mW
SOT23 note 1 − 250 mW
SOT346 note 1 − 250 mW
SOT323 note 1 − 200 mW
SOT490 notes 1 and 2 − 250 mW
SOT883 notes 2 and 3 − 250 mW
SOT416 note 1 − 150 mW
T
stg
T
j
T
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient
temperature
PACKAGE
SOT883
−65 +150 °C
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
2004 Aug 06 4
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
thermal resistance from junction to ambient in free air
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W
SOT416 note 1 833 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
collector-base cut-off curren t VCB = 50 V; IE = 0 A − − 100 nA
collector-emitter cut-off current VCE = 30 V; IB = 0 A − − 1 μA
VCE = 30 V; IB = 0 A; Tj = 150 °C − − 50 μA
I
EBO
h
V
FE
CEsat
emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA
DC current gain VCE = 5 V; IC = 1 mA 200 − −
collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA − − 100 mV
R1 input resistor 3.3 4.7 6.1 kΩ
C
c
collector capacitance IE = ie = 0 A; VCB = 10 V;
= 1 MHz
f
− − 2.5 pF
2004 Aug 06 5
NXP Semiconductors Product data sheet
0
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
PACKAGE OUTLINES
Plastic surface-mounted package; 3 leads SOT49
D
3
E
H
E
AB
X
v M
A
12
e
b
1
p
e
0 1 2 mm
DIMENSIONS (mm are the original dimensions)
UNIT b
A
0.8
0.6
0.33
0.23
mm
OUTLINE
VERSION
SOT490 SC-89
cD
p
0.2
1.7
1.5
0.95
0.75
0.1
IEC JEDEC JEITA
e
E
e
0.5
1.0
REFERENCES
1
w M
B
H
1.7
1.5
scale
E
L
0.5
0.3
A
c
L
p
detail X
0.1
wv
0.1
EUROPEAN
PROJECTION
ISSUE DATE
05-07-28
06-03-16
p
2004 Aug 06 6
NXP Semiconductors Product data sheet
6
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
Plastic surface-mounted package; 3 leads SOT34
D
B
E
H
E
3
A
X
v
M
A
12
e
1
DIMENSIONS (mm are the original dimensions)
1.3
1.0
A
1
0.1
0.013
b
p
0.50
0.26
0.35
0.10
IEC JEDEC JEITA
A
UNIT
mm
OUTLINE
VERSION
SOT346 TO-236 SC-59A
b
p
e
cD
3.1
2.7
0 1 2 mm
e
E
1.7
1.9
1.3
REFERENCES
Q
A
A
1
c
L
w
M
B
detail X
scale
e
H
L
Qwv
p
E
0.33
0.6
0.2
0.23
0.2
0.95
1
3.0
2.5
p
0.2
EUROPEAN
PROJECTION
ISSUE DATE
04-11-11
06-03-16
2004 Aug 06 7
NXP Semiconductors Product data sheet
L
3
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
eadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88
L
2
b
e
1
e
1
L
1
3
b
1
E
DIMENSIONS (mm are the original dimensions)
A
(1)
UNIT
A
0.50
mm
0.46
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883 SC-101
max.
0.03
1
bb
0.20
0.12
IEC JEDEC JEITA
1
0.55
0.47
DE
0.62
0.55
eLL
1.02
0.35 0.65
0.95
REFERENCES
A
A
1
D
0 0.5 1 mm
scale
e
1
0.30
0.22
0.30
0.22
1
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
2004 Aug 06 8
NXP Semiconductors Product data sheet
4
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
Plastic single-ended leaded (through hole) package; 3 leads SOT5
c
E
d
1
D
2
A L
b
e
1
e
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
5.2
mm
5.0
OUTLINE
VERSION
SOT54 TO-92 SC-43A
b
0.48
0.40
b
c
D
d
1.7
4.2
1.4
3.6
REFERENCES
E
2.54
1
0.66
0.45
0.38
4.8
4.4
0.55
IEC JEDEC JEITA
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
max.
2.5
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
2004 Aug 06 9
NXP Semiconductors Product data sheet
3
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
Plastic surface-mounted package; 3 leads SOT2
D
3
E
H
E
AB
X
v
M
A
12
e
1
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
max.
0.1
b
p
0.48
0.15
0.38
0.09
IEC JEDEC JEITA
b
p
e
cD
3.0
2.8
w
M
B
0 1 2 mm
scale
e
0.95
H
1
2.5
2.1
e
E
1.4
1.9
1.2
REFERENCES
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Aug 06 10
NXP Semiconductors Product data sheet
3
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
Plastic surface-mounted package; 3 leads SOT32
D
y
3
E
AB
X
H
E
v
M
A
12
e
b
1
p
e
DIMENSIONS (mm are the original dimensions)
A
1
mm
1.1
0.8
A
max
0.1
b
0.4
0.3
p
cD
0.25
2.2
0.10
1.8
UNIT
A
A
1
B
w
M
0 1 2 mm
scale
e
1.3
e1HEL
2.2
0.65
2.0
p
0.45
0.15
E
1.35
1.15
Qwv
0.23
0.13
detail X
Q
c
L
p
0.20.2
OUTLINE
VERSION
SOT323 SC-70
IEC JEDEC JEITA
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Aug 06 11
NXP Semiconductors Product data sheet
6
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
Plastic surface-mounted package; 3 leads SOT41
D
v
M
A
3
E
AB
X
H
E
12
e
b
1
p
e
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
0.95
mm
0.60
OUTLINE
VERSION
SOT416 SC-75
max
0.1
b
cD
p
0.30
0.25
0.10
1.8
1.4
0.15
IEC JEDEC JEITA
e
E
0.9
1
0.7
REFERENCES
w
A
M
B
0 0.5 1 mm
scale
e
H
L
p
E
0.45
0.15
0.5
1
1.75
1.45
A
1
L
p
detail X
v
Qw
0.23
0.13
0.2
0.2
EUROPEAN
PROJECTION
Q
c
ISSUE DATE
04-11-04
06-03-16
2004 Aug 06 12
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
PDTC143T series
R1 = 4.7 kΩ, R2 = open
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Aug 06 13
60134) may cause permanent damage to
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands R75/06/pp14 Date of release: 2004 Aug 06 Document or der number: 9397 750 13675
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