PDTC124E series
NPN resistor-equipped transistors;
R1 = 22 k, R2 = 22 k
Rev. 8 — 28 November 2011 Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package PNP
PDTC124EE SOT416 SC-75 - PDTA124EE ultra small
PDTC124EM SOT883 SC-101 - PDTA124EM leadless ultra small
PDTC124ET SOT23 - TO-236AB PDT A124ET small
PDTC124EU SOT323 SC-70 - PDTA124EU very small
NXP JEITA JEDEC
complement
Package
configuration
1.2 Features and benefits
100 mA output current capability Reduces component count
Built-in bias resistors Reduces pick and place costs
Simplifies circuit design AEC-Q101 qualified
1.3 Applications
Digital applications in automotive and
industrial segments
Cost-saving alternative for BC847/857
series in digital applications
Control of IC inputs Switching loads
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 bias resistor ratio 0.8 1 1.2
collector-emitter voltage open base - - 50 V
output current - - 100 mA
NXP Semiconductors
006aaa144
12
3
sym007
3
2
1
R1
R2
3
1
2
Transparent
top view
sym007
3
2
1
R1
R2
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT23; SOT323; SOT416
1 input (base)
2 GND (emitter)
3 output (collector)
SOT883
1 input (base)
2 GND (emitter)
3 output (collector)
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
3. Ordering information
Table 4. Ordering information
Type number Package
PDTC124EE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTC124EM SC-101 leadless ultra small plastic package; 3 solder lands;
PDTC124ET - plastic surface-mounted package; 3 leads SOT23
PDTC124EU SC-70 plastic surface-mounted package; 3 leads SOT323
4. Marking
Table 5. Marking codes
Type number Marking code
PDTC124EE 06
PDTC124EM DX
PDTC124ET *17
PDTC124EU *06
[1] * = placeholder for manufacturing site code
Name Description Version
SOT883
body 1.0 0.6 0.5 mm
[1]
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 2 of 17
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
V
I
I
O
I
CM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 10 V
input voltage
positive - +40 V
negative - 10 V
output current - 100 mA
peak collector current single pulse;
1ms
t
p
total power dissipation T
amb
25 C
PDTC124EE (SOT416)
PDTC124EM (SOT883)
PDTC124ET (SOT23)
PDTC124EU (SOT323)
junction temperature - 150 C
ambient temperature 65 +150 C
storage temperature 65 +150 C
-100mA
[1][2]
-150mW
[2][3]
-250mW
[1]
-250mW
[1]
-200mW
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 3 of 17
NXP Semiconductors
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
(1) SOT23; FR4 PCB, standard footprint
SOT883; FR4 PCB with 70 m copper strip line, standard footprint
(2) SOT323; FR4 PCB, standard footprint
(3) SOT416; FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
300
P
tot
(mW)
200
100
0
-75 17512525 75-25
006aac778
(1)
(2)
(3)
T
(°C)
amb
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
in free air
to ambient
PDTC124EE (SOT416)
PDTC124EM (SOT883)
PDTC124ET (SOT23)
PDTC124EU (SOT323)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
[1][2]
--830K/W
[2][3]
--500K/W
[1]
--500K/W
[1]
--625K/W
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 4 of 17
NXP Semiconductors
006aac782
10
-5
1010
-2
10
-4
10
2
10
-1
tp (s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
2
10
0.2
0.1
0.05
0.02
10
0.01
0
1
-5
10
-4
10
-3
10
-2
-1
10
1
1010
2
10
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC124EE (SOT416); typical values
006aac781
tp (s)
3
10
FR4 PCB, 70 m copper strip line
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC124EM (SOT883); typical values
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 5 of 17
NXP Semiconductors
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
3
10
duty cycle = 1
Z
th(j-a)
0.75
(K/W)
10
2
10
1
-5
10
0.33
0.1
0.02
0
0.5
0.2
0.05
0.01
-4
10
-3
10
-2
-1
10
1
1010
2
10
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC124ET (SOT23); typical values
3
10
duty cycle = 1
Zth(j-a)
(K/W)
10
0.75
0.5
0.33
2
0.2
0.1
0.05
006aac779
tp (s)
006aac780
3
10
0.02
10
1
10
0.01
0
-5
-4
10
-3
10
-2
-1
10
1
1010
2
10
tp (s)
3
10
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC124EU (SOT323); typical values
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 6 of 17
NXP Semiconductors
7. Characteristics
Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1 bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
f
T
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
=25C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain VCE=5V; IC=5mA 60 - collector-emitter
saturation voltage
off-state input voltage VCE=5V; IC=100A-1.10.8V
on-state input voltage VCE= 0.3 V; IC=5mA 2.5 1.7 - V
collector capacitance VCB=10V; IE=ie=0A;
transition frequency VCE=5V; IC=10mA;
VCB=50V; IE= 0 A - - 100 nA
VCE=30V; IB= 0 A - - 100 nA
=30V; IB=0A;
V
CE
--5A
Tj= 150 C
VEB=5V; IC=0A - - 180 A
IC=10mA; IB=0.5mA - - 150 mV
--2.5pF
f=1MHz
[1]
-230-MHz
f = 100 MHz
[1] Characteristics of built-in transistor
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 7 of 17
NXP Semiconductors
006aac796
IC (mA)
10
-1
10
2
101
1
10
V
I(on)
(V)
10
-1
(1)
(2)
(3)
IC (mA)
10
-1
101
006aac797
1
10
V
I(off)
(V)
10
-1
(1)
(2)
(3)
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
3
10
h
FE
2
10
10
1
-1
10
006aac794
(1)
(2)
(3)
2
101
IC (mA)
10
VCE=5V
(1) T
(2) T
(3) T
amb
amb
amb
= 100 C
=25C
= 40 C
Fig 6. DC current gain as a function of collector
current; typical values
006aac795
2
101
IC (mA)
10
V
CEsat
(V)
-1
10
-2
10
(1) T
(2) T
(3) T
1
(1)
(2)
(3)
-1
10
=20
I
C/IB
= 100 C
amb
=25C
amb
= 40 C
amb
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
VCE=0.3V
(1) T
(2) T
(3) T
Fig 8. On-state input voltage as a function of
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
= 40 C
amb
=25C
amb
amb
= 100 C
collector current; typical values
(1) T
(2) T
(3) T
Fig 9. Off-state input voltage as a function of
=5V
V
CE
= 40 C
amb
=25C
amb
= 100 C
amb
collector current; typical values
Product data sheet Rev. 8 — 28 November 2011 8 of 17
NXP Semiconductors
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
006aac798
VCB (V)
C
(pF)
3
c
2
1
0
0504020 3010
f=1MHz; T
=25CV
amb
Fig 10. Collector capacitance as a function of
collector-base voltage; typical values
8. Test information
10
f
T
(MHz)
10
3
2
10
-1
10
=5V; T
CE
amb
=25C
006aac757
2
101
IC (mA)
10
Fig 11. Transition frequency as a function of collector
current; typical values of built-in transistor
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 9 of 17
NXP Semiconductors
04-11-04Dimensions in mm
0.95
0.60
1.8
1.4
1.75
1.45
0.9
0.7
0.25
0.10
1
0.30
0.15
12
3
0.45
0.15
03-04-03Dimensions in mm
0.62
0.55
0.55
0.47
0.50
0.46
0.65
0.20
0.12
3
21
0.30
0.22
0.30
0.22
1.02
0.95
0.35
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0
1.35
1.15
1.3
0.4
0.3
0.25
0.10
12
3
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
9. Package outline
Fig 12. Package outline PDTC124EE (SOT416/SC-75) Fig 13. Package outline PDTC124EM (SOT883/SC-101)
Fig 14. Package outline PDTC124ET (SOT23) Fig 15. Package outline PDTC124EU (SOT323/SC-70)
10. Packing information
[1]
3000 5000 10000
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
PDTC124EE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135
PDTC124EM SOT883 2 mm pitch, 8 mm tape and reel - - -315
PDTC124ET SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
PDTC124EU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135
[1] For further information and the availability of packing methods, see Section 14.
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 10 of 17
NXP Semiconductors
solder lands
solder resist
occupied area
solder paste
sot416_fr
0.85
1.7
2.2
2
0.5
(3×)
0.6
(3×)
1
1.3
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot883_fr
1.3
0.3
0.6
0.7
0.4
0.9
0.3
(2×)
0.4
(2×)
0.25
(2×)
R0.05 (12×)
0.7
Dimensions in mm
11. Soldering
Fig 16. Reflow soldering footprint PDTC124EE (SOT416/SC-75)
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
Reflow soldering is the only recommended soldering method.
Reflow soldering is the only recommended soldering method.
Fig 17. Reflow soldering footprint PDTC124EM (SOT883/SC-101)
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 11 of 17
NXP Semiconductors
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
Fig 18. Reflow soldering footprint PDTC124ET (SOT23)
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 12 of 17
Fig 19. Wave soldering footprint PDTC124ET (SOT23)
NXP Semiconductors
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35
0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
Fig 20. Reflow soldering footprint PDTC124EU (SOT323/SC-70)
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
Fig 21. Wave soldering footprint PDTC124EU (SOT323/SC-70)
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 13 of 17
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
PDTC124E series
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTC124E_SER v.8 20111128 Product data sheet - PDTC124E_SERIES v.7
Modifications:
PDTC124E_SERIES v.7 20040817 Product data sheet - PDTC124E_SERIES v.6
PDTC124E_SERIES v.6 20030414 Product specification - -
• The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type numbers PDTC124EEF, PDTC124EK and PDTC124ES removed.
• Section 1 “Product profile”: updated
• Section 3 “Ordering information”: added
• Figure 1 to 11: added
• Table 6 “Limiting values”: updated
• Section 6 “Thermal characteristics”: updated
• Table 8 “Characteristics”: V
V
off-state input voltage, I
I(off)
redefined to V
i(on)
updated, fT added
CEO
on-state input voltage, V
I(on)
redefined to
i(off)
• Section 8 “Test information”: added
• Section 9 “Package outline”: superseded by minimized package outline drawings
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 14 of 17
NXP Semiconductors
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
13. Legal information
13.1 Data sheet status
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have change d since this d ocument was p ublished and may dif fe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or cust omer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default ,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third part y
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
, unless otherwise
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 15 of 17
NXP Semiconductors
PDTC124E series
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PDTC124E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 28 November 2011 16 of 17
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14 Contact information. . . . . . . . . . . . . . . . . . . . . 16
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PDTC124E series
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 November 2011
Document identifier: PDTC124E_SER
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