NXP BC337, BC337-16, BC337-25, BC337-40, BC817 Schematic [ru]

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BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Rev. 06 — 17 November 2009 Product data sheet

1. Product profile

1.1 General description

NPN general-purpose transistors.

Table 1. Product overview

Type number Package PNP complement

BC817 SOT23 - BC807 BC817W SOT323 SC-70 BC807W BC337

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

NXP JEITA

[1]

SOT54 (TO-92) SC-43A BC327

1.2 Features

 High current  Low voltage

1.3 Applications

General-purpose switching and amplification



1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

I I h

C CM

CEO

collector-emitter voltage open base;

IC=10mA collector current (DC) - - 500 mA peak collector current - - 1 A DC current gain IC = 100 mA;

=1V

BC817; BC817W; BC337 100 - 600 BC817-16; BC817-16W; BC337-16 100 - 250 BC817-25; BC817-25W; BC337-25 160 - 400 BC817-40; BC817-40W; BC337-40 250 - 600

--45V

[1]

---

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

NXP Semiconductors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

SOT23

1base 2emitter 3 collector

SOT323

1base 2emitter 3 collector

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

sot323_s

sym02

SOT54

1emitter 2base 3 collector

SOT54A

1emitter 2base 3 collector

SOT54 variant

1emitter 2base 3 collector

001aab34

001aab44

1 2 3

1 2

1 2 3

sym02

Product data sheet Rev. 06 — 17 November 2009 2 of 19

NXP Semiconductors

3. Ordering information

Table 4. Ordering information

Type number

BC817 - plastic surface mounte d package; 3 leads SOT23 BC817W SC-70 plastic surface mounted package; 3 leads SOT323

[2]

BC337

[1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see

4. Marking

Table 5. Marking codes

Type number Marking code

BC817 6D* BC817-16 6A* BC817-25 6B* BC817-40 6C* BC817W 6D* BC817-16W 6A* BC817-25W 6B* BC817-40W 6C* BC337 C337 BC337-16 C33716 BC337-25 C33725 BC337-40 C33740

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

[1]

Package Name Description Version

SC-43A plastic single-ended leaded (through hole) package;

3 leads

Section 2 and Section 9).

[1]

SOT54

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

Product data sheet Rev. 06 — 17 November 2009 3 of 19

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

stg

amb

[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups.

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

collector-base voltage open emitter - 50 V collector-emitter voltage open base;

=10mA

emitter-base voltage open collector - 5 V collector current (DC) - 500 mA peak collector current - 1 A peak base current - 200 mA total power dissipation

BC817 T BC817W T BC337 T

amb amb amb

≤ 25 °C ≤ 25 °C

≤ 25 °C storage temperature −65 +150 °C junction temperature - 150 °C ambient temperature −65 +150 °C

-45V

[1][2]

-250mW

[1][2]

-200mW

[1][2]

-625mW

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups.

thermal resistance from junction to ambient

BC817 T BC817W T BC337 T

amb amb amb

≤ 25 °C

[1][2]

- - 500 K/W

[1][2]

- - 625 K/W

[1][2]

- - 200 K/W

Product data sheet Rev. 06 — 17 November 2009 4 of 19

NXP Semiconductors

7. Characteristics

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Table 8. Characteristics

amb

C unless otherwise specified.

= 25

Symbol Parameter Conditions Min Typ Max Unit

CBO

EBO

collector-base cut-off current IE = 0 A; VCB = 20 V - - 100 nA

IE = 0 A; VCB = 20 V;

=150°C

--5μA

emitter-base cut-off current IC = 0 A; VEB = 5 V - - 100 nA DC current gain IC = 100 mA; VCE = 1 V

[1]

BC817; BC817W; BC337 100 - 600 BC817-16; BC817-16W;

100 - 250

BC337-16 BC817-25; BC817-25W;

160 - 400

BC337-25 BC817-40; BC817-40W;

250 - 600

BC337-40

[1]

h V

CEsat

DC current gain IC = 500 mA; VCE = 1 V collector-emitter saturation

IC = 500 mA; IB = 50 mA

40 - -

[1]

--700mV

voltage

[2]

base-emitter voltage IC = 500 mA; VCE = 1 V collector capacitance IE = ie = 0 A; VCB = 10 V;

--1.2V

-3-pF

f=1MHz

transition frequency IC = 10 mA; VCE = 5 V;

100 - - MHz

f=100MHz

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] V

decreases by approximately 2 mV/K with increasing temperature.

Product data sheet Rev. 06 — 17 November 2009 5 of 19

NXP Semiconductors

006aaa131

006aaa132

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

400

300

200

100

−1

(1)

(2)

(3)

110

IC (mA)

VCE = 1 V (1) T (2) T (3) T

= 150 °C

amb

= 25 °C

amb

= −55 °C

amb

Fig 1. Selection -16: DC curren t ga in as a function of

collector current; typical values

800

600

400

200

(1) T (2) T (3) T

−1

= 1 V

CE amb amb amb

(1)

(2)

(3)

110

= 150 °C = 25 °C = −55 °C

IC (mA)

Fig 2. Selection -25: DC current gain as a function of

collector current; typical values

006aaa133

(1)

(2)

(3)

110

IC (mA)

(1) T (2) T (3) T

VCE = 1 V

= 150 °C

amb

= 25 °C

amb

= −55 °C

amb

600

400

200

−1

Fig 3. Selection -40: DC current gain as a function of collector current; typical values

Product data sheet Rev. 06 — 17 November 2009 6 of 19

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