NXP BC327, BC327-16, BC327-25, BC327-40, BC807 Schematic [ru]
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BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Rev. 06 — 17 November 2009 Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors.
Table 1. Product overview
Type number Package NPN complement
BC807 SOT23 - BC817
BC807W SOT323 SC-70 BC817W
BC327
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NXP JEITA
[1]
SOT54 (TO-92) SC-43A BC337
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
I
h
C
CM
FE
CEO
collector-emitter voltage open base;
IC=10mA
collector current (DC) - - −500 mA
peak collector current - - −1A
DC current gain IC = −100 mA;
= −1V
V
CE
BC807; BC807W; BC327 100 - 600
BC807-16; BC807-16W; BC327-16 100 - 250
BC807-25; BC807-25W; BC327-25 160 - 400
BC807-40; BC807-40W; BC327-40 250 - 600
--−45 V
[1]
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors
3
o
3
7
0
9
8
0
9
7
0
9
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT23
1base
2emitter
3 collector
SOT323
1base
2emitter
3 collector
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
3
12
3
12
sot323_s
3
1
2
sym01
3
1
2
sym01
SOT54
1emitter
2base
3 collector
SOT54A
1emitter
2base
3 collector
SOT54 variant
1emitter
2base
3 collector
001aab34
001aab34
001aab44
3
1
2
3
1
2
3
1
2
3
2
1
06aaa14
3
2
1
06aaa14
3
2
1
06aaa14
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 2 of 19
NXP Semiconductors
3. Ordering information
Table 4. Ordering information
Type number
BC807 - plastic surface mounte d package; 3 leads SOT23
BC807W SC-70 plastic surface mounted package; 3 leads SOT323
[2]
BC327
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2
4. Marking
Table 5. Marking codes
Type number Marking code
BC807 5D*
BC807-16 5A*
BC807-25 5B*
BC807-40 5C*
BC807W 5D*
BC807-16W 5A*
BC807-25W 5B*
BC807-40W 5C*
BC327 C327
BC327-16 C32716
BC327-25 C32725
BC327-40 C32740
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
[1]
Package
Name Description Version
SC-43A plastic single-ended leaded (through hole) package;
3 leads
and Section 9).
[1]
SOT54
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 3 of 19
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
collector-base voltage open emitter - −50 V
collector-emitter voltage open base;
=10mA
I
C
emitter-base voltage op en collector - −5V
collector current (DC) - −500 mA
peak collector current - −1A
peak base current - −200 mA
total power dissipation
BC807 T
BC807W T
BC327 T
amb
amb
amb
≤ 25 °C
≤ 25 °C
≤ 25 °C
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
- −45 V
[1][2]
- 250 mW
[1][2]
- 200 mW
[1][2]
- 625 mW
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
thermal resistance from
junction to ambient
BC807 T
BC807W T
BC327 T
amb
amb
amb
≤ 25 °C
≤ 25 °C
≤ 25 °C
[1][2]
--500K/W
[1][2]
--625K/W
[1][2]
--200K/W
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 4 of 19
NXP Semiconductors
7. Characteristics
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Table 8. Characteristics
T
= 25 °C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
FE
collector-base cut-off current IE = 0 A; VCB = −20 V - - −100 nA
= 0 A; VCB = −20 V;
I
E
=150°C
T
j
--−5 μA
emitter-base cut-off current IC = 0 A; VEB = −5 V - - −100 nA
DC current gain IC = −100 mA; VCE = −1 V
[1]
BC807; BC807W; BC327 100 - 600
BC807-16; BC807-16W;
100 - 250
BC327-16
BC807-25; BC807-25W;
160 - 400
BC327-25
BC807-40; BC807-40W;
250 - 600
BC327-40
h
V
FE
CEsat
DC current gain IC = −500 mA; VCE = −1 V
collector-emitter saturation
IC = −500 mA; IB = −50 mA
[1]
40 - -
[1]
--−700 mV
voltage
V
BE
C
c
base-emitter voltage IC = −500 mA; VCE = −1 V
collector capacitance IE = ie = 0 A; VCB = −10 V;
[2]
--−1.2 V
-5- pF
f=1MHz
f
T
transition frequency IC = −10 mA; VCE = −5 V;
80 - - MHz
f=100MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] V
decreases by approximately 2 mV/K with increasing temperature.
BE
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 5 of 19
NXP Semiconductors
006aaa119
006aaa120
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
300
h
FE
200
100
0
−1
−10
(1)
(2)
(3)
−1 −10
−10
(mA)
−10
3
2
I
C
VCE = −1 V
(1) T
(2) T
(3) T
= 150 °C
amb
= 25 °C
amb
= −55 °C
amb
Fig 1. Selection -16: DC curren t ga in as a function of
collector current; typical values
800
600
h
FE
−1 −10
= 150 °C
= 25 °C
= −55 °C
(1)
(2)
(3)
(mA)
−10
3
−10
2
I
C
400
200
0
−10
(1) T
(2) T
(3) T
V
−1
CE
amb
amb
amb
= −1 V
Fig 2. Selection -25: DC current gain as a function of
collector current; typical values
006aaa121
h
FE
VCE = −1 V
(1) T
(2) T
(3) T
= 150 °C
amb
= 25 °C
amb
= −55 °C
amb
600
400
200
0
−10
−1
(1)
(2)
(3)
−1 −10
−10
(mA)
−10
3
2
I
C
Fig 3. Selection -40: DC current gain as a function of collector current; typical values
BC807_BC807W_BC327_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 6 of 19
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