NXP BB182 DATA SHEET

BB182
VHF variable capacitance diode
Rev. 03 — 24 February 2009 Product data sheet
1. Product profile

1.1 General description

The BB182 is a planar technology variable capacitance diode in a SOD523 (SC-79) ultra small plastic package. The excellent matching performance is achieved by gliding matching and a Direct Matching Assembly (DMA) procedure.

1.2 Features

n High linearity n Excellent matching to 2 % DMA n Ultra small plastic SMD package n C n Low series resistance
d(28V)
: 2.7 pF; C
d(1V)
to C
d(28V)
ratio: 22

1.3 Applications

n Electronic tuning in VHF television tuners, Band A up to 160 MHz n Voltage Controlled Oscillators (VCO)

2. Pinning information

Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode 2 anode
[1] The marking bar indicates the cathode.

3. Ordering information

Table 2. Ordering information
Type number Package
BB182 SC-79 plastic surface-mounted package; 2 leads SOD523
[1]
21
sym008
Name Description Version
NXP Semiconductors

4. Marking

Table 3. Marking codes
Type number Marking code
BB182 2

5. Limiting values

Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
I
F
T
stg
T
j
BB182
VHF variable capacitance diode
reverse voltage - 32 V
peak value in series with a 10 k resistor - 35 V forward current - 20 mA storage temperature 55 +150 °C junction temperature 55 +125 °C

6. Characteristics

Table 5. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
I
R
r
s
C
d
C
d(1V)/Cd(2V)
C
d(1V)/Cd(28V)
C
d(25V)/Cd(28V)
C
d/Cd
reverse current see Figure 2
=30V - - 10 nA
V
R
=30V; Tj=85°C - - 200 nA
V
R
diode series resistance f = 100 MHz at Cd= 30 pF - 1.0 1.2 diode capacitance f = 1 MHz; see Figure 1 and
Figure 3
= 1 V 52 - 62 pF
V
R
= 28 V 2.48 2.7 2.89 pF
V
R
diode capacitance ratio (1 V to 2 V) f = 1 MHz - 1.31 ­diode capacitance ratio (1 V to 28 V) f = 1 MHz 20.6 22 ­diode capacitance ratio (25 V to 28 V) f = 1 MHz - 1.05 ­diode capacitance matching VR= 1 V to 28 V; in a sequence
--2%
of 10 diodes (gliding)
BB182_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 24 February 2009 2 of 6
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