NXP BAW101 Schematic [ru]

DATA SH EET

DISCRETE SEMICONDUCTORS

M3D071

BAW101

High voltage double diode

Product data sheet 2003 May 13

NXP Semiconductors Product data sheet

High voltage double diode BAW101

FEATURES

• Small plastic SMD package

• High switching speed: max. 50 ns

• High continuous reverse voltage: 300 V

• Electrically insulated diodes.

APPLICATIONS

• High voltage switching

• Automotive

• Communication.

DESCRIPTION

The BAW101 is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT143B plastic SMD package.

MARKING

T YPE NUMBER MARKING CODE

(1)

BAW101 ∗AB

PINNING

PIN DESCRIPTION

1 cathode 1
2 cathode 2
3 anode 2
4 anode 1

handbook, halfpage

43

Top view

4

1

21

MAM059

Fig.1 Simplified outline (SOT143B) and symbol.

3

2

Note

1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.

2003 May 13 2

NXP Semiconductors Product data sheet

High voltage double diode BAW101

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V

V

I

F

I

FRM

I

FSM

P
T
T
T

R

RRM

tot
stg
j
amb

continuous reverse voltage − 300 V

series connection − 600 V

repetitive peak reverse voltage − 300 V

series connection − 600 V

continuous forward current single diode loaded; note 1; see Fig.2 − 250 mA

double diode loaded; note 1; see Fig.2 − 140 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward

current
total power dissipation T

square wave; Tj = 25 °C prior to surge;

t

= 1 µs

= 25 °C; note 1 − 350 mW

amb

− 4.5 A

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V
V
I

R

t

rr

C

BR(R)
F

d

reverse breakdown voltage IR = 100 µA 300 − V
forward voltage IF = 100 mA; note 1 − 1.1 V
reverse current VR = 250 V − 150 nA

VR = 250 V; T

reverse recovery time when switched from IF = 30 mA to IR = 30 mA;

R

= 100 Ω; measured at IR = 3 mA

L

= 150 °C − 50 µA

amb

− 50 ns

diode capacitance VR = 0 V; f = 1 MHz − 2 pF

Note

1. Pulse test: pulse width = 300 µs; δ = 0.02.

2003 May 13 3

NXP Semiconductors Product data sheet

High voltage double diode BAW101

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

R

th j-a

Notes

1. One or more diodes loaded.

2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.

GRAPHICAL DATA

thermal resistance from junction to soldering point note 1 255 K/W
thermal resistance from junction to ambient note 2 357 K/W

150

T

amb

MLE057

(°C)

300

handbook, halfpage

I

F

(mA)

200

100

0

0

(1) Single diode loaded. (2) Double diode loaded.
Device mounted on an FR4 printed-circuit board.

Cathode-lead mounting pad = 1 cm

(1)

(2)

50 100

2

.

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

200

600

handbook, halfpage

I

F

(mA)

400

200

0

02

(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.

= 25 °C; maximum values.

(3) T

j

(1) (3)(2)

1

MBG384

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2003 May 13 4

NXP Semiconductors Product data sheet

High voltage double diode BAW101

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG703

10

2

10

3

10

tp (µs)

4

10

2

10

handbook, halfpage

I

R

MLE058

(µA)

10

(1)

1

−1

10

−2

10

(2)

Tj (°C)

(1) VR = V
(2) V

R

= V

RMAX
RMAX

: maximum values.
: typical values.

Fig.5 Reverse current as a function of junction

temperature.

0.6

handbook, halfpage

C

d

MLE059

(pF)

0.5

0.4

0.3

200100500 150

0.2
02 10

4

68

VR (V)

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

2003 May 13 5

NXP Semiconductors Product data sheet

High voltage double diode BAW101

150

T

amb

MLE060

(°C)

400

handbook, halfpage

V

R

(V)

300

200

100

0

050

100 200

Fig.7 Maximum permissible continuous reverse

voltage as a function of ambient
temperature.

2003 May 13 6

NXP Semiconductors Product data sheet

Plastic surface mounted package; 4 leads SOT143B

High voltage double diode BAW101

PACKAGE OUTLINE

D

B

E

A

y

v

M

A

e

b

p

w

M

B

34

A

A

1

21

b

1

e

1

H

E

detail X

Q

L

p

X

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

1.1

0.9

OUTLINE

VERSION

SOT143B

1

A

max

0.1

b

c

D

b

0.48

0.38

1

p

0.88

0.15

0.78

0.09

IEC JEDEC EIAJ

E

3.0

1.4

2.8

1.2

REFERENCES

1.9

e

1.7

H

L

E

1

2.5

2.1

0.45

0.15

p

0.55

0.45

EUROPEAN

PROJECTION

e

ywvQ

0.1 0.10.2

ISSUE DATE

97-02-28

2003 May 13 7

NXP Semiconductors Product data sheet

High voltage double diode BAW101

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT
STATUS

(2)

development.

DEFINITION

System of IEC
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
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other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

60134) may cause permanent damage to

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings

2003 May 13 8

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.

Contact information

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© NXP B.V. 2009
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The information presented in this documen t d oes not form part of any quotation or contract, is believed to b e a ccur ate a nd re li a ble and may be chan ged
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Printed in The Netherlands 613514/01/pp9 Date of release: 2003 May 13 Document order number: 9397 750 11147