NXP BAW101 Schematic [ru]
DATA SH EET
DISCRETE SEMICONDUCTORS
M3D071
BAW101
High voltage double diode
Product data sheet 2003 May 13
NXP Semiconductors Product data sheet
High voltage double diode BAW101
FEATURES
• Small plastic SMD package
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Electrically insulated diodes.
APPLICATIONS
• High voltage switching
• Automotive
• Communication.
DESCRIPTION
The BAW101 is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT143B plastic SMD package.
MARKING
T YPE NUMBER MARKING CODE
(1)
BAW101 ∗AB
PINNING
PIN DESCRIPTION
1 cathode 1
2 cathode 2
3 anode 2
4 anode 1
handbook, halfpage
43
Top view
4
1
21
MAM059
Fig.1 Simplified outline (SOT143B) and symbol.
3
2
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
2003 May 13 2
NXP Semiconductors Product data sheet
High voltage double diode BAW101
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
V
I
F
I
FRM
I
FSM
P
T
T
T
R
RRM
tot
stg
j
amb
continuous reverse voltage − 300 V
series connection − 600 V
repetitive peak reverse voltage − 300 V
series connection − 600 V
continuous forward current single diode loaded; note 1; see Fig.2 − 250 mA
double diode loaded; note 1; see Fig.2 − 140 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward
current
total power dissipation T
square wave; Tj = 25 °C prior to surge;
t
= 1 µs
= 25 °C; note 1 − 350 mW
amb
− 4.5 A
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
V
I
R
t
rr
C
BR(R)
F
d
reverse breakdown voltage IR = 100 µA 300 − V
forward voltage IF = 100 mA; note 1 − 1.1 V
reverse current VR = 250 V − 150 nA
VR = 250 V; T
reverse recovery time when switched from IF = 30 mA to IR = 30 mA;
R
= 100 Ω; measured at IR = 3 mA
L
= 150 °C − 50 µA
amb
− 50 ns
diode capacitance VR = 0 V; f = 1 MHz − 2 pF
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
2003 May 13 3
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