NXP BAV99, BAV99S, BAV99W Schematic [ru]

BAV99 series
High-speed switching diodes
Rev. 8 — 18 November 2010 Product data sheet

1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number Package Configuration Package
BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small
NXP JEITA JEDEC
configuration

1.2 Features and benefits

High switching speed: trr≤ 4ns  Low capacitance: Cd≤ 1.5 pFLow leakage current Reverse voltage: V
100 V
R
Small SMD plastic packages AEC-Q101 qualified

1.3 Applications

High-speed switching Reverse polarity protectionGeneral-purpose switching

1.4 Quick reference data

Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
I
R
V
R
t
rr
[1] When switched from IF= 10 mA to IR=10mA; RL= 100 Ω; measured at IR=1mA.
reverse current VR=80V - - 0.5 μA reverse voltage - - 100 V reverse recovery time
[1]
--4ns
NXP Semiconductors
4
3
1

2. Pinning information

Table 3. Pinning
Pin Description Simplified outline Graphic symbol
BAV99; BAV99W
1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 1),
BAV99S
1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 3),
4 anode (diode 3) 5 cathode (diode 4) 6 cathode (diode 1),
anode (diode 2)
anode (diode 4)
anode (diode 2)
BAV99 series
High-speed switching diodes
3
12
132
006aaa14
56
4
12
6254
13
3
006aaa76
006aab10

3. Ordering information

Table 4. Ordering information
Type number Package
BAV99 - plastic surface-mounted package; 3leads SOT23 BAV99S SC-88 plastic surface-mounted package; 6 leads SOT363 BAV99W SC-70 plastic surface-mounted package; 3 leads SOT323

4. Marking

Table 5. Marking codes
Type number Marking code
BAV99 A7* BAV99S K1* BAV99W A7*
[1] * = placeholder for manufacturing site code
Name Description Version
[1]
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 2 of 14
NXP Semiconductors

5. Limiting values

Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
Per device
T
j
T
amb
T
stg
[1] Single diode loaded. [2] Double diode loaded. [3] T [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[5] Soldering points at pins 2, 3, 5 and 6.
repetitive peak reverse voltage
reverse voltage - 100 V forward current
BAV99
BAV99S BAV99W
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
BAV99 T BAV99S T BAV99W T
junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C
=25°C prior to surge.
j
BAV99 series
High-speed switching diodes
-100V
[1]
-215mA
[2]
-125mA
[1]
-200mA
[1]
-150mA
[2]
-130mA
-500mA
square wave
tp=1μs-4A
=1ms - 1 A
t
p
=1s - 0.5 A
t
p
25 °C-250mW
amb
85 °C
sp
25 °C-200mW
amb
[3]
[1][4]
[5]
-250mW
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 3 of 14
NXP Semiconductors

6. Thermal characteristics

Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
[1] Single diode loaded. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Soldering points at pins 2, 3, 5 and 6.
thermal resistance from junction to ambient
BAV99 - - 500 K/W BAV99W - - 625 K/W
thermal resistance from junction to solder point
BAV99 - - 360 K/W BAV99S BAV99W - - 300 K/W
in free air
BAV99 series
High-speed switching diodes
[1][2]
[3]
- - 260 K/W

7. Characteristics

Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
I
R
C
d
t
rr
V
FR
[1] When switched from IF= 10 mA to IR=10mA; RL= 100 Ω; measured at IR=1mA. [2] When switched from I
=25°C unless otherwise specified.
forward voltage IF= 1 mA - - 715 mV
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
=150mA --1.25V
I
F
reverse current VR=25V --30nA
=80V --0.5μA
V
R
=25V; Tj=150°C --30μA
V
R
=80V; Tj=150°C --50μA
V
R
diode capacitance f = 1 MHz; VR=0V --1.5pF reverse recovery time forward recovery voltage
=10mA; tr=20ns.
F
[1]
--4ns
[2]
--1.75V
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 4 of 14
NXP Semiconductors
006aab132
006aab133
BAV99 series
High-speed switching diodes
3
10
I
F
(mA)
2
10
10
1
1
10
0 1.41.00.4 0.80.2 1.20.6
(1) T
amb
(2) T
amb
(3) T
amb
(4) T
amb
(1) (2) (3) (4)
VF (V)
= 150 °C =85°C =25°C = 40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
mbg446
C
(pF
0.8
d
)
0.6
2
10
I
R
(μA)
10
10
10
10
10
(1) T (2) T (3) T (4) T
10
1
1
2
3
4
5
0 1008040 6020
amb amb amb amb
= 150 °C =85°C =25°C = 40 °C
(1)
(2)
(3)
(4)
(V)
V
R
Fig 2. Reverse current as a function of reverse
voltage; typical values
mbg704
I
FSM
(A)
2
10
10
0.4
1
0.2
1
0
0816124
f=1MHz; T
Fig 3. Diode capacitance as a function of reverse
=25°C Based on square wave currents.
amb
VR (V)
voltage; typical values
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
10
110
T
j
10 10
=25°C; prior to surge
2
3
10
tp (μs)
4
Fig 4. Non-repetitive peak forward current as a
function of pulse duration; maximum values
Product data sheet Rev. 8 — 18 November 2010 5 of 14
NXP Semiconductors
2

8. Test information

BAV99 series
High-speed switching diodes
D.U.T.
I
RS = 50 Ω
V = V
R + IF × RS
F
SAMPLING
OSCILLOSCOPE
= 50 Ω
R
i
mga881
V
R
(1) IR=1mA
Input signal: reverse pulse rise time t Oscilloscope: rise time t
=0.35ns
r
= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle δ =0.05
r
Fig 5. Reverse recovery time test circuit and waveforms
I
RS = 50 Ω
1 kΩ 450 Ω
D.U.T.
OSCILLOSCOPE
Ri = 50 Ω
I
10 %
t
r
t
r
10 %
90 %
90 %
input signal
t
p
input signal
t
p
t
+ I
F
V
V
FR
t
t
rr
output signal
output signal
t
(1)
t
mga88
Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp≥ 100 ns; duty cycle δ≤0.005
Fig 6. Forward recovery voltage test circuit and waveforms

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 6 of 14
NXP Semiconductors

9. Package outline

BAV99 series
High-speed switching diodes
2.5
2.1
3.0
2.8
3
0.45
0.15
1.4
1.2
12
0.48
1.9
0.38
1.1
0.9
0.15
0.09
2.2
1.8
0.45
465
0.15
2.2
1.35
2.0
1.15
04-11-04Dimensions in mm
pin 1 index
132
0.65
1.3
0.3
0.2
1.1
0.8
0.25
0.10
Fig 7. Package outline BAV99 (SOT23/TO-236AB) Fig 8. Package outline BAV99S (SOT363/SC-88)
2.2
2.0
1.35
1.15
2.2
1.8
3
0.45
0.15
1.1
0.8
06-03-16Dimensions in mm
12
Fig 9. Package outline BAV99W (SOT323/SC-70)

10. Packing information

Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
BAV99 SOT23 4 mm pitch, 8 mm tape and reel -215 -235 BAV99S SOT363 4 mm pitch, 8 mm tape and reel; T1
BAV99W SOT323 4 mm pitch, 8 mm tape and reel -115 -135
[1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping
1.3
0.4
0.3
0.25
0.10
04-11-04Dimensions in mm
4 mm pitch, 8 mm tape and reel; T2
[1]
3000 10000
[2]
-1 15 -135
[3]
-125 -165
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 7 of 14
NXP Semiconductors
fr
fw

11. Soldering

BAV99 series
High-speed switching diodes
3.3
2.9
1.9
solder lands
3
1.7
0.7
(3×)
0.5
(3×)
0.6
(3×)
1
2
0.6
(3×)
Fig 10. Reflow soldering footprint BAV99 (SOT23/TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder resist
solder paste
occupied area
Dimensions in mm
sot023_
solder lands
4.6
2.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
solder resist
occupied area
sot023_
Fig 11. Wave soldering footprint BAV99 (SOT23/TO-236AB)
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 8 of 14
NXP Semiconductors
fr
fw
2.35
1.5
0.6
(4×)
0.5
(4×)
BAV99 series
High-speed switching diodes
2.65
solder lands
0.4 (2×) solder resist
solder paste
0.5
(4×)
0.6
(4×)
0.6
(2×)
1.8
Fig 12. Reflow soldering footprint BAV99S (SOT363/SC-88)
1.5
2.5
4.5
1.3 1.3
2.45
5.3
0.3
1.5
Fig 13. Wave soldering footprint BAV99S (SOT363/SC-88)
occupied area
Dimensions in mm
sot363_
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot363_
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 9 of 14
NXP Semiconductors
fr
w
BAV99 series
High-speed switching diodes
2.65
1.85
1.325
solder lands
2
0.55 (3×)
3
1
1.3
0.5
(3×)
2.35
0.6
(3×)
Fig 14. Reflow soldering footprint BAV99W (SOT323/SC-70)
4.6
2.575
1.425 (3×)
3.65 2.1
1.8
09
(2×)
solder resist
solder paste
occupied area
Dimensions in mm
sot323_
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot323_f
Fig 15. Wave soldering footprint BAV99W (SOT323/SC-70)
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 10 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes

12. Revision history

Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAV99_SER_8 201 01118 Product data sheet - BAV99_SER_7 Modifications:
BAV99_SER_7 20100414 Product data sheet - BAV99_SER_6 BAV99_SER_6 20100310 Product data sheet - BAV99_SER_5 BAV99_SER_5 20080820 Product data sheet - BAV99_4
BAV99_4 20011015 Product specificatio n - BAV99_3 BAV99S_3 20010514 Product specification - BAV99S_N_2 BAV99W_4 19990511 Product specification - BAV99W_3
Section 4 “Marking”: marking placeholder explanation in table footer updated
Section 5 “Limiting values”: P
condition for BAV99S corrected
tot
Section 13 “Legal information”: updated
BAV99S_3 BAV99W_4
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 11 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes

13. Legal information

13.1 Data sheet status

Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
, unless otherwise
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 12 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 13 of 14
NXP Semiconductors

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
BAV99 series
High-speed switching diodes
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 18 November 2010
Document identifier: BAV99_SER
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