NXP BAV99, BAV99S, BAV99W Schematic [ru]

BAV99 series

High-speed switching diodes

Rev. 8 — 18 November 2010 Product data sheet

1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.

Table 1. Product overview

Type number Package Configuration Package

BAV99 SOT23 - TO-236AB dual series small
BAV99S SOT363 SC-88 - quadruple; 2 series very small
BAV99W SOT323 SC-70 - dual series very small

NXP JEITA JEDEC

configuration

1.2 Features and benefits

 High switching speed: trr≤ 4ns  Low capacitance: Cd≤ 1.5 pF
 Low leakage current  Reverse voltage: V

≤ 100 V

R

 Small SMD plastic packages  AEC-Q101 qualified

1.3 Applications

 High-speed switching  Reverse polarity protection
 General-purpose switching

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

I

R

V

R

t

rr

[1] When switched from IF= 10 mA to IR=10mA; RL= 100 Ω; measured at IR=1mA.

reverse current VR=80V - - 0.5 μA
reverse voltage - - 100 V
reverse recovery time

[1]

--4ns

NXP Semiconductors

4

3

1

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

BAV99; BAV99W

1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 1),

BAV99S

1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 3),

4 anode (diode 3)
5 cathode (diode 4)
6 cathode (diode 1),

anode (diode 2)

anode (diode 4)

anode (diode 2)

BAV99 series

High-speed switching diodes

3

12

132

006aaa14

56

4

12

6254

13

3

006aaa76

006aab10

3. Ordering information

Table 4. Ordering information

Type number Package

BAV99 - plastic surface-mounted package; 3leads SOT23
BAV99S SC-88 plastic surface-mounted package; 6 leads SOT363
BAV99W SC-70 plastic surface-mounted package; 3 leads SOT323

4. Marking

Table 5. Marking codes

Type number Marking code

BAV99 A7*
BAV99S K1*
BAV99W A7*

[1] * = placeholder for manufacturing site code

Name Description Version

[1]

BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 8 — 18 November 2010 2 of 14

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

V

RRM

V

R

I

F

I

FRM

I

FSM

P

tot

Per device

T

j

T

amb

T

stg

[1] Single diode loaded.
[2] Double diode loaded.
[3] T
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[5] Soldering points at pins 2, 3, 5 and 6.

repetitive peak reverse
voltage

reverse voltage - 100 V
forward current

BAV99

BAV99S
BAV99W

repetitive peak forward
current

non-repetitive peak
forward current

total power dissipation

BAV99 T
BAV99S T
BAV99W T

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

=25°C prior to surge.

j

BAV99 series

High-speed switching diodes

-100V

[1]

-215mA

[2]

-125mA

[1]

-200mA

[1]

-150mA

[2]

-130mA

-500mA

square wave

tp=1μs-4A

=1ms - 1 A

t

p

=1s - 0.5 A

t

p

≤ 25 °C-250mW

amb

≤ 85 °C

sp

≤ 25 °C-200mW

amb

[3]

[1][4]

[5]

-250mW

BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 8 — 18 November 2010 3 of 14

NXP Semiconductors

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

R

th(j-sp)

[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering points at pins 2, 3, 5 and 6.

thermal resistance from
junction to ambient

BAV99 - - 500 K/W
BAV99W - - 625 K/W

thermal resistance from
junction to solder point

BAV99 - - 360 K/W
BAV99S
BAV99W - - 300 K/W

in free air

BAV99 series

High-speed switching diodes

[1][2]

[3]

- - 260 K/W

7. Characteristics

Table 8. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

F

I

R

C

d

t

rr

V

FR

[1] When switched from IF= 10 mA to IR=10mA; RL= 100 Ω; measured at IR=1mA.
[2] When switched from I

=25°C unless otherwise specified.

forward voltage IF= 1 mA - - 715 mV

= 10 mA - - 855 mV

I

F

=50mA --1V

I

F

=150mA --1.25V

I

F

reverse current VR=25V --30nA

=80V --0.5μA

V

R

=25V; Tj=150°C --30μA

V

R

=80V; Tj=150°C --50μA

V

R

diode capacitance f = 1 MHz; VR=0V --1.5pF
reverse recovery time
forward recovery voltage

=10mA; tr=20ns.

F

[1]

--4ns

[2]

--1.75V

BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 8 — 18 November 2010 4 of 14

NXP Semiconductors

006aab132

006aab133

BAV99 series

High-speed switching diodes

3

10

I

F

(mA)

2

10

10

1

−1

10

0 1.41.00.4 0.80.2 1.20.6

(1) T

amb

(2) T

amb

(3) T

amb

(4) T

amb

(1) (2) (3) (4)

VF (V)

= 150 °C
=85°C
=25°C
= −40 °C

Fig 1. Forward current as a function of forward

voltage; typical values

mbg446

C

(pF

0.8

d

)

0.6

2

10

I

R

(μA)

10

10

10

10

10

(1) T
(2) T
(3) T
(4) T

10

1

−1

−2

−3

−4

−5

0 1008040 6020

amb
amb
amb
amb

= 150 °C
=85°C
=25°C
= −40 °C

(1)

(2)

(3)

(4)

(V)

V

R

Fig 2. Reverse current as a function of reverse

voltage; typical values

mbg704

I

FSM

(A)

2

10

10

0.4

1

0.2

−1

0

0816124

f=1MHz; T

Fig 3. Diode capacitance as a function of reverse

=25°C Based on square wave currents.

amb

VR (V)

voltage; typical values

BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

10

110

T

j

10 10

=25°C; prior to surge

2

3

10

tp (μs)

4

Fig 4. Non-repetitive peak forward current as a

function of pulse duration; maximum values

Product data sheet Rev. 8 — 18 November 2010 5 of 14