NXP BAV74 Schematic [ru]

DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D088

BAV74

High-speed double diode

Product data sheet
Supersedes data of 1999 May 11

2004 Jan 14

NXP Semiconductors Product data sheet

High-speed double diode BAV74

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage: max. 50 V

• Repetitive peak reverse voltage: max. 60 V

PINNING

PIN DESCRIPTION

1 anode (a1)
2 anode (a2)
3 cathode

• Repetitive peak forward current: max. 450 mA.

APPLICATIONS

• High-speed switching in thick and thin-film circuits.

ns

DESCRIPTION

The BAV74 consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in a small SOT23 plastic SMD pa ckage.

Top view

MARKING

T YPE NUMBER MARKING CODE

(1)

Fig.1 Simplified outline (SOT23) and symbol.

BAV74 JA*

Note

1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

21

21

3

3

MAM108

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode

V

RRM

repetitive peak reverse

− 60 V

voltage

V

R

I

F

continuous reverse voltage − 50 V
continuous forward current single diode loaded; note 1; see Fig.2 − 215 mA

double diode loaded; note 1; see Fig.2 − 125 mA

I

FRM

I

FSM

repetitive peak forward current − 450 mA
non-repetitive peak forward

current

square wave; Tj = 25 °C prior to surge; see Fig.4

t = 1 µs − 4 A
t = 1 ms − 1 A
t = 1 s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

= 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on an FR4 printed-circuit board.

2004 Jan 14 2

NXP Semiconductors Product data sheet

High-speed double diode BAV74

ORDERING INFORMATION

T YPE NUMBER

PACKAGE

NAME DESCRIPTION VERSION

BAV74 − plastic surface mounted package; 3 leads SOT23

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Per diode

V

F

forward voltage see Fig.3

IF = 1 mA 715 mV
IF = 10 mA 855 mV
IF = 100 mA 1.0 V

I

R

reverse current see Fig.5

VR = 25 V 30 nA
VR = 50 V 0.1 µA
VR = 25 V; Tj = 150 °C 30 µA
VR = 50 V; Tj = 150 °C 100 µA

C

d

t

rr

V

fr

diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.5 pF
reverse recovery time when switched from IF = 10 mA to

= 10 mA; RL = 100 Ω; measured

I

R

= 1 mA; see Fig.7

at I

R

forward recovery voltage when switched from IF = 10 mA;

= 20 ns; see Fig.8

t

r

4 ns

1.75 V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th(j-tp)
th(j-a)

thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W

Note

1. Device mounted on an FR4 printed-circuit board.

2004 Jan 14 3