NXP BAV74 Schematic [ru]

DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D088

BAV74

High-speed double diode

Product data sheet
Supersedes data of 1999 May 11

2004 Jan 14

NXP Semiconductors Product data sheet

High-speed double diode BAV74

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage: max. 50 V

• Repetitive peak reverse voltage: max. 60 V

PINNING

PIN DESCRIPTION

1 anode (a1)
2 anode (a2)
3 cathode

• Repetitive peak forward current: max. 450 mA.

APPLICATIONS

• High-speed switching in thick and thin-film circuits.

ns

DESCRIPTION

The BAV74 consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in a small SOT23 plastic SMD pa ckage.

Top view

MARKING

T YPE NUMBER MARKING CODE

(1)

Fig.1 Simplified outline (SOT23) and symbol.

BAV74 JA*

Note

1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

21

21

3

3

MAM108

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode

V

RRM

repetitive peak reverse

− 60 V

voltage

V

R

I

F

continuous reverse voltage − 50 V
continuous forward current single diode loaded; note 1; see Fig.2 − 215 mA

double diode loaded; note 1; see Fig.2 − 125 mA

I

FRM

I

FSM

repetitive peak forward current − 450 mA
non-repetitive peak forward

current

square wave; Tj = 25 °C prior to surge; see Fig.4

t = 1 µs − 4 A
t = 1 ms − 1 A
t = 1 s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

= 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on an FR4 printed-circuit board.

2004 Jan 14 2

NXP Semiconductors Product data sheet

High-speed double diode BAV74

ORDERING INFORMATION

T YPE NUMBER

PACKAGE

NAME DESCRIPTION VERSION

BAV74 − plastic surface mounted package; 3 leads SOT23

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Per diode

V

F

forward voltage see Fig.3

IF = 1 mA 715 mV
IF = 10 mA 855 mV
IF = 100 mA 1.0 V

I

R

reverse current see Fig.5

VR = 25 V 30 nA
VR = 50 V 0.1 µA
VR = 25 V; Tj = 150 °C 30 µA
VR = 50 V; Tj = 150 °C 100 µA

C

d

t

rr

V

fr

diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.5 pF
reverse recovery time when switched from IF = 10 mA to

= 10 mA; RL = 100 Ω; measured

I

R

= 1 mA; see Fig.7

at I

R

forward recovery voltage when switched from IF = 10 mA;

= 20 ns; see Fig.8

t

r

4 ns

1.75 V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th(j-tp)
th(j-a)

thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W

Note

1. Device mounted on an FR4 printed-circuit board.

2004 Jan 14 3

NXP Semiconductors Product data sheet

High-speed double diode BAV74

GRAPHICAL DATA

300

I

F

(mA)

200

100

0

0 200

Device mounted on an FR4 printed-circuit board.

single diode loaded

double diode loaded

100

T ( C)

amb

MBD033

o

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

300

handbook, halfpage

I

F

(mA)

200

100

0

02

(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.

(1) (3)(2)

1

MBG383

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.

= 25 °C prior to surge.

T

j

10

2

10

3

10

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

tp (µs)

MBG704

4

10

2004 Jan 14 4

NXP Semiconductors Product data sheet

High-speed double diode BAV74

5

10

handbook, halfpage

I

R

(nA)

4

10

3

10

2

10

10

0

(1) VR = 50 V; maximum values.
(2) VR = 50 V; typical values.
(3) VR = 25 V; typical values.

(1) (2) (3)

100

MBG376

Tj (oC)

Fig.5 Reverse current as a function of junction

temperature.

200

0.8

handbook, halfpage

C

d

(pF)

0.6

0.4

0.2

0

0816124

f = 1 MHz; Tj = 25 °C.

MBG446

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

2004 Jan 14 5

NXP Semiconductors Product data sheet

High-speed double diode BAV74

handbook, full pagewidth

R = 50

Ω

S

V = V I x R

RF S

(1) IR = 1 mA.

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

Ω

R = 50

i

MGA881

t

r

10%

V

R

90%

t

p

input signal

Fig.7 Reverse recovery voltage test circuit and waveforms.

t

I

F

t

rr

t

(1)

output signal

R = 50

S

I

Ω

Ω1 k Ω450

D.U.T.

OSCILLOSCOPE

R = 50

Ω

i

MGA882

I

10%

t

r

90%

t

p

input

signal

V

V

fr

t

t

output

signal

Fig.8 Forward recovery voltage test circuit and waveforms.

2004 Jan 14 6

NXP Semiconductors Product data sheet

3

High-speed double diode BAV74

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT2

D

3

A

A

1

12

e

1

b

p

e

w

M

B

E

H

E

detail X

AB

Q

L

p

X

v

M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

max.

0.1

b

cD

p

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

0.95

H

L

Qwv

1

2.5

2.1

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

2004 Jan 14 7

NXP Semiconductors Product data sheet

High-speed double diode BAV74

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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Export control ⎯ This document as well as the item(s)
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC

2004 Jan 14 8

60134) may cause permanent damage to

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

NXP Semiconductors

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drawings which were updated to the latest version.

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Printed in The Netherlands R76/04/pp9 Date of release: 2004 Jan 14 Document order number: 9397 750 12392