NXP BAV23, BAV23A, BAV23C, BAV23S Schematic [ru]
BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010 Product data sheet
1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in sm all Surface-Mounted
Device (SMD) plastic packages.
Table 1. Product overview
Type number Package Configuration
BAV23A SOT23 TO-236AB dual common anode
BAV23C SOT23 TO-236AB dual common cathode
BAV23S SOT23 TO-236AB dual series
BAV23 SOT143B - dual isolated
NXP JEDEC
1.2 Features and benefits
High switching speed: trr 50 ns Low capacitance: Cd 2pF
Low leakage current Small SMD plastic package
Repetitive peak reverse voltage:
250 V
V
RRM
1.3 Applications
High-speed switching at high voltage
High-voltage general-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
I
R
V
R
t
rr
[1] When switched from IF= 10mA to IR=10mA; RL= 100 ; measured at IR=1mA.
reverse current VR= 200 V - - 100 nA
reverse voltage - - 200 V
reverse recovery time
[1]
--50ns
NXP Semiconductors
12
3
006aab099
12
3
12
3
006aab034
12
3
12
3
006aaa763
12
3
21
34
006aab100
12
43
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
BAV23A
1 cathode (diode 1)
2 cathode (diode 2)
3 common anode
BAV23C
1 anode (diode 1)
2 anode (diode 2)
3 common cathode
BAV23 series
Dual high-voltage switching diodes
BAV23S
1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 1),
anode (diode 2)
BAV23
1 cathode (diode 1)
2 cathode (diode 2)
3 anode (diode 2)
4 anode (diode 1)
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 2 of 13
NXP Semiconductors
3. Ordering information
Table 4. Ordering information
Type number Package
BAV23A - plastic surface-mounted package; 3 leads SOT23
BAV23C
BAV23S
BAV23 - plastic surface-mounted package; 4 leads SOT143B
4. Marking
Table 5. Marking codes
Type number Marking code
BAV23A *V0
BAV23C *V9
BAV23S *V5
BAV23 *L3
BAV23 series
Dual high-voltage switching diodes
Name Description Version
[1]
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse
-250V
voltage
reverse voltage - 200 V
forward current
repetitive peak forward
[1]
-225mA
[2]
-125mA
-625mA
current
non-repetitive peak forward
current
square wave
tp=1s-9A
= 100 s-3A
t
p
=10ms - 1.7 A
t
p
[3]
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 3 of 13
NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
P
tot
T
j
T
amb
T
stg
[1] Single diode loaded.
[2] Double diode loaded.
=25C prior to surge.
[3] T
j
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
total power dissipation T
junction temperature - 150 C
ambient temperature 65 +150 C
storage temperature 65 +150 C
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
…continued
25 C
amb
in free air
[4]
-250mW
[1]
- - 500 K/W
- - 360 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
I
R
C
d
t
rr
[1] When switched from IF= 10 mA to IR=10mA; RL= 100 ; measured at IR=1mA.
=25C unless otherwise specified.
forward voltage IF=100mA --1.0V
=200mA --1.25V
I
F
reverse current VR= 200 V - - 100 nA
=200V; Tj= 150 C - - 100 A
V
R
diode capacitance f = 1 MHz; VR=0V --2pF
reverse recovery time
[1]
--50ns
BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 4 of 13
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