NXP BAT 86 NXP Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

halfpage

M3D050

BAT86

Schottky barrier diode

Product specification
Supersedes data of 1996 Mar 20

2000 May 25

Philips Semiconductors Product specification

Schottky barrier diode BAT86

FEATURES

• Low forward voltage

• Guard ring protected

• Hermetically-sealed leaded glass

DESCRIPTION

Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diodeissuitable for mounting on a 2 E (5.08 mm) pitch.

package.

APPLICATIONS

handbook, halfpage

k

a

• Ultra high-speed switching

• Voltage clamping

MAM193

• Protection circuits

• Blocking diodes.

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

I

F

I

F(AV)

I

FRM

I

FSM

T

stg

T

j

T

amb

continuous reverse voltage − 50 V
continuous forward current − 200 mA
average forward current PCBmounting,leadlength = 4 mm;

V

= 25 V; a = 1.57; δ = 0.5;

RWM

T

=50°C; see Fig.2

amb

− 200 mA

repetitive peak forward current tp≤ 1s;δ≤0.5 − 500 mA
non-repetitive peak forward current tp≤ 10 ms − 5A
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C

2000 May 25 2

Philips Semiconductors Product specification

Schottky barrier diode BAT86

ELECTRICAL CHARACTERISTICS

T

=25°C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

I

R

t

rr

C

d

Note

1. Pulsed test: t

forward voltage see Fig.3

I

= 0.1 mA 300 mV

F

I

= 1 mA 380 mV

F

= 10 mA 450 mV

I

F

I

= 30 mA 600 mV

F

= 100 mA 900 mV

I

F

reverse current VR= 40V; see Fig.4; note 1 5 µA
reverse recovery time when switched from IF= 10 mA to

4ns
IR= 10 mA; RL= 100 Ω;
measured at I

= 1 mA; see Fig.6

R

diode capacitance f = 1 MHz; VR= 1 V; see Fig.5 8 pF

= 300 µs; δ = 0.02.

p

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 320 K/W

Note

1. Refer to SOD68 standard mounting conditions.

2000 May 25 3

Philips Semiconductors Product specification

Schottky barrier diode BAT86

GRAPHICAL DATA

250

handbook, halfpage

I

F(AV)
(mA)

200

150

100

50

0

0 50 100 150

Fig.2 Derating curve.

MRA540

o

T ( C)

amb

3

10

handbook, halfpage

I

F

(1) (2) (3)

MLD357

(mA)

2

10

10

(1) (2) (3)

1

−1

10

VF (V)

(1) T
(2) T
(3) T

amb
amb
amb

= 125 °C.
=85°C.
=25°C.

Fig.3 Forward current as a function of forward

voltage; typical values.

1.20.80.40

5

10

handbook, halfpage

I

R

(nA)

4

10

3

10

2

10

MGC686

(1)

(2)

10

(3)

1

−1

10

(1) T
(2) T
(3) T

amb
amb
amb

10 20 30 40

=85°C.
=25°C.
= −40 °C.

VR (V)

Fig.4 Reverse current as a function of reverse

voltage; typical values.

12

handbook, halfpage

C

d

MGC687

(pF)

8

4

500

0

050

10 20 30 40

VR (V)

f = 1 MHz.

Fig.5 Diode capacitance as a function of reverse

voltage; typical values.

2000 May 25 4

Philips Semiconductors Product specification

Schottky barrier diode BAT86

andbook, halfpage

I

F

dI

F

dt

t

10%

Q

r

90%

I

R

t

f

MRC129 - 1

Fig.6 Reverse recovery definitions.

2000 May 25 5

Philips Semiconductors Product specification

Schottky barrier diode BAT86

PACKAGE OUTLINE

Hermetically sealed glass package; axial leaded; 2 leads

LD L

DIMENSIONS (mm are the original dimensions)

G

UNIT

mm

Note

1. The marking band indicates the cathode.

b

max.

0.55

OUTLINE
VERSION

SOD68 DO-34

D

max.

max.

IEC JEDEC EIAJ

L

1

min.

25.43.041.6

REFERENCES

SOD68

(1)

b

G

1

0 2 4 mm

scale

EUROPEAN

PROJECTION

ISSUE DATE

97-06-09

2000 May 25 6

Philips Semiconductors Product specification

Schottky barrier diode BAT86

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification Thisdata sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury.Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

2000 May 25 7

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Printed in The Netherlands 613514/02/pp8 Date of release: 2000 May 25 Document order number: 9397 750 07026