NXP BAT86 Schematics

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BAT86

Schottky barrier single diode

25 July 2012 Product data sheet

1. Product profile

1.1 General description

Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode
is suitable for mounting on a 2 E (5.08 mm) pitch.

1.2 Features and benefits

•

•

•

Low forward voltage
Guard ring protected
Hermetically-sealed leaded glass package

1.3 Applications

Ultra high-speed switching

•

Voltage clamping

•

Protection circuits

•

Blocking diodes

•

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

I

F(AV)

V

R

V

F

average forward
current

reverse voltage - - 50 V

forward voltage IF = 10 mA; T

δ = 0.5 ; f = 20 kHz; T

mounting, lead length = 4 mm

= 25 °C - - 450 mV

amb

≤ 50 °C; PCB

amb

- - 200 mA

2. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K cathode[1]

2 A anode

DO-34 (SOD68)

[1] The marking band indicates the cathode.

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BAT86

Schottky barrier single diode

3. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BAT86 DO-34 hermetically sealed glass package; axial leaded; 2 leads SOD68

4. Marking

Table 4. Marking codes

Type number Marking code

BAT86 marking band

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

R

I

F

I

F(AV)

reverse voltage - 50 V

forward current - 200 mA

average forward current δ = 0.5 ; f = 20 kHz; T

≤ 50 °C; PCB

amb

- 200 mA

mounting, lead length = 4 mm

I

FRM

I

FSM

repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 500 mA

non-repetitive peak forward

tp ≤ 10 ms; T

= 25 °C - 5 A

j(init)

current

T

j

T

amb

T

stg

junction temperature - 125 °C

ambient temperature -65 125 °C

storage temperature -65 150 °C

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance
from junction to
ambient

in free air [1] - - 320 K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

BAT86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved

Product data sheet 25 July 2012 2 / 8

NXP Semiconductors

1.20.80.40

VF(V)

I

F

(mA)

10

3

10

2

10

1

10

- 1

mld357

(1) (2) (3)

(1) (2) (3)

mgc686

10

5

10

4

I

R

(nA)

10

3

10

2

10

- 1

10

1

500 10 20 30 40

VR(V)

(1)

(2)

(3)

BAT86

Schottky barrier single diode

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

V

F

forward voltage

IF = 0.1 mA; T

IF = 1 mA; T

IF = 10 mA; T

IF = 30 mA; T

IF = 100 mA; T

I

R

reverse current VR = 40 V; T

tp = 300 µs; δ = 0.02

= 25 °C - - 300 mV

amb

= 25 °C - - 380 mV

amb

= 25 °C - - 450 mV

amb

= 25 °C - - 600 mV

amb

= 25 °C - - 900 mV

amb

= 25 °C; pulsed;

amb

- - 5 µA

C

d

t

rr

(1) T

(2) T

(3) T

diode capacitance f = 1 MHz; T

reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;

I

= 1 mA; T

R(meas)

= 125 °C

amb

= 85 °C

amb

= 25 °C

amb

Fig. 1. Forward current as a function of forward

voltage; typical values

= 25 °C; VR = 1 V - - 8 pF

amb

- - 4 ns

= 25 °C

amb

(1) T

(2) T

(3) T

= 85 °C

amb

= 25 °C

amb

= −40 °C

amb

Fig. 2. Reverse current as a function of reverse

voltage; typical values

BAT86 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved

Product data sheet 25 July 2012 3 / 8