NXP BAT54AW, BAT54CW, BAT54SW, BAT54W Schematic [ru]

SOT323

12

3

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1

3

2

n.c.

BAT54W series

Schottky barrier diodes

Rev. 3 — 20 November 2012 Product data sheet

1. Product profile

1.1 General description

Planar Schottky barrier diodes with an integrated guard ring for stress protection,
encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic
package.

1.2 Features and benefits

 Low forward voltage
 Low capacitance
 AEC-Q101 qualified

1.3 Applications

 Ultra high-speed switching  Voltage clamping
 Line termination  Reverse polarity protection

1.4 Quick reference data

Table 1. Quick reference data

T

=25C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

R

V

F

I

R

[1] Pulse test: tp 300 s; 0.02.

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BAT54W

1 anode
2 not connected
3 cathode

reverse voltage - - 30 V
forward voltage IF=100mA
reverse current VR=25V

[1]

--800mV

[1]

--2A

NXP Semiconductors

12

3

006aaa439

12

3

12

3

12

3

006aaa437

12

3

BAT54W series

Schottky barrier diodes

Table 2. Pinning

…continued

Pin Description Simplified outline Graphic symbol

BAT54AW

1 cathode (diode 1)
2 cathode (diode 2)
3 common anode

BAT54CW

1 anode (diode 1)
2 anode (diode 2)
3 common cathode

12

3

006aac984

BAT54S W

1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 1),

anode (diode 2)

3. Ordering information

Table 3. Ordering information

Type number Package

BAT54W series SC-70 plastic surface-mounted package; 3 leads SOT323

4. Marking

Table 4. Marking codes

Type number Marking code

BAT54W L4*
BAT54AW 42*
BAT54CW 43*
BAT54SW 44*

[1] * = placeholder for manufacturing site code.

Name Description Version

[1]

BAT54W_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 3 — 20 November 2012 2 of 11

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

V

R

I

F

I

FRM

I

FSM

Per device; one diode loaded

P

tot

T

j

T

amb

T

stg

[1] Tj=25C before surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

BAT54W series

Schottky barrier diodes

reverse voltage - 30 V
forward current - 200 mA
repetitive peak forward

current
non-repetitive peak

forward current

total power dissipation T
junction temperature - 150 C
ambient temperature 55 +150 C
storage temperature 65 +150 C

tp 1s; 0.5 300 mA

square wave;
t

<10ms

p

 25 C

amb

[1]

-600mA

[2]

-200mW

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device; one diode loaded

R

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

thermal resistance from
junction to ambient

in free air

[1]

- - 625 K/W

BAT54W_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 3 — 20 November 2012 3 of 11

NXP Semiconductors

006aac829

VF (V)

0.0 1.20.80.4

1

10

10

2

10

3

I

F

(mA)

10

-1

(1)

(1)

(2)

(2) (3)

(3)

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,

5

$

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7. Characteristics

Table 7. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

F

I

R

C

d

t

rr

[1] Pulse test: tp 300 s; 0.02.
[2] When switched from I

BAT54W series

Schottky barrier diodes

=25C unless otherwise specified.

forward voltage

IF= 0.1 mA - - 240 mV

= 1 mA - - 320 mV

I

F

= 10 mA - - 400 mV

I

F

= 30 mA - - 500 mV

I

F

= 100 mA - - 800 mV

I

F

reverse current VR=25V
diode capacitance f = 1 MHz; VR=1V --10pF
reverse recovery time

= 10 mA to IR=10mA; RL= 100 ; measured at IR=1mA.

F

[1]

[1]

--2A

[2]

--5ns

(1) T
(2) T
(3) T

amb
amb
amb

= 125 C
=85C
=25C

Fig 1. Forward current as a function of forward

voltage; typical values

(1) T
(2) T
(3) T

amb
amb
amb

= 125 C
=85C
=25C

Fig 2. Reverse current as a function of reverse

voltage; typical values

BAT54W_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 3 — 20 November 2012 4 of 11