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74AHC1G126GF
Schematic [ru]
18 pgs207.75 Kb0
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NXP 74AHC1G126GF, 74AHC1G126GM, 74AHC1G126GV, 74AHC1G126GW, 74AHCT1G126GF Schematic [ru]

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74AHC1G126; 74AHCT1G126
Bus buffer/line driver; 3-state
Rev. 8 — 23 August 2012 Product data sheet

1. General description

74AHC1G126 and 74AHCT1G126 are high-speed Si-gate CMOS devices. They provide one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output to assume a high-impedance OFF-state.
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
Symmetrical output impedanceHigh noise immunityLow power dissipationBalanced propagation delaysMultiple package optionsESD protection:
HBM JESD22-A114F: exceeds 2000 VMM JESD22-A115-A: exceeds 200 VCDM JESD22-C101E: exceeds 1000 V
Specifie d from 40 C to +125 C

3. Ordering information

Table 1. Ordering information
Type number Package
74AHC1G126GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; 74AHCT1G126GW 74AHC1G126GV 40 C to +125 C SC-74A plastic surface-mounted package; 5 leads SOT753 74AHCT1G126GV 74AHC1G126GM 40 C to +125 C XSON6 plastic extremely thin small outline package; no 74AHCT1G126GM 74AHC1G126GF 40 C to +125 C XSON6 plastic extremely thin small outline package; 74AHCT1G126GF
Temperature range Name Description Version
SOT353-1
body width 1.25 mm
SOT886
leads; 6 terminals; body 1 1.45 0.5 mm
SOT891
no leads; 6 terminals; body 1  1  0.5 mm
NXP Semiconductors
mna125
A
OE
Y
2
1
4
mna126
1
4
OE
2
mna127
OE
A
Y
74AHC1G126
74AHCT1G126
OE V
CC
A
GND Y
001aaf096
1
2
3
5
4
74AHC1G126
74AHCT1G126
A
001aak257
OE
GND
n.c.
V
CC
Y
Transparent top view
2
3
1
5
4
6
74AHC1G126
74AHCT1G126
A
001aak258
OE
GND
n.c.
V
CC
Y
Transparent top view
2
3
1
5
4
6

4. Marking

74AHC1G126; 74AHCT1G126
Bus buffer/line driver; 3-state
Table 2. Marking codes
Type number Marking
[1]
74AHC1G126GW AN 74AHCT1G126GW CN 74AHC1G126GV A26 74AHCT1G126GV C26 74AHC1G126GM AN 74AHCT1G126GM CN 74AHC1G126GF AN 74AHCT1G126GF CN
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.

5. Functional diagram

Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram

6. Pinning information

6.1 Pinning

Fig 4. Pin configuration
SOT353-1 and SOT753
Fig 5. Pin configuration SOT886 Fig 6. Pin configuration SOT 891
74AHC_AHCT1G126 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 8 — 23 August 2012 2 of 17
NXP Semiconductors
74AHC1G126; 74AHCT1G126

6.2 Pin description

Table 3. Pin description
Symbol Pin Description
OE 1 1 output enable input A 2 2 data input A GND 3 3 ground (0 V) Y 4 4 data output Y n.c. - 5 not connected V
CC
SOT353-1/SOT753 SOT886/SOT891
5 6 supply voltage

7. Functional description

Bus buffer/line driver; 3-state
Table 4. Function table
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state
Input Output OE A Y
HLL HHH LXZ

8. Limiting values

Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V V I
IK
I
OK
I
O
I
CC
I
GND
T P
CC I
stg tot
supply voltage 0.5 +7.0 V input voltage 0.5 +7.0 V input clamping current VI < 0.5 V output clamping current VO < 0.5 V or VO>VCC+0.5V output current 0.5 V < VO <VCC+0.5V - 25 mA supply current - 75 mA ground current 75 - mA storage temperature 65 +150 C total power dissipation T
[1]
20 - mA
[1]
- 20 mA
= 40 C to +125 C
amb
[2]
- 250 mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For TSSOP5 and SC-74A packages: above 87.5 C the value of P
For XSON6 packages: above 118 C the value of P
74AHC_AHCT1G126 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 8 — 23 August 2012 3 of 17
derates linearly with 7.8 mW/K.
tot
derates linearly with 4.0 mW/K.
tot
NXP Semiconductors
74AHC1G126; 74AHCT1G126

9. Recommended operating conditions

Bus buffer/line driver; 3-state
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 74AHC1G126 74AHCT1G126 Unit
Min Typ Max Min Typ Max
V
CC
V
I
V
O
T
amb
t/V input transition rise
supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V input voltage 0 - 5.5 0 - 5.5 V output voltage 0 - V
CC
0- VCCV
ambient temperature 40 +25 +125 40 +25 +125 C
= 3.3 V 0.3 V - - 100 - - - ns/V
V
and fall rate
CC
= 5.0 V 0.5 V - - 20 - - 20 ns/V
V
CC

10. Static characteristics

Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
74AHC1G126
V
IH
HIGH-level input voltage
V
IL
LOW-level input voltage
V
OH
HIGH-level output voltage
V
OL
LOW-level output voltage
I
OZ
OFF-state output current
I
I
input leakage current
I
CC
supply current VI=VCCor GND; IO = 0 A;
Min Typ Max Min Max Min Max
V
= 2.0 V 1.5 - - 1.5 - 1.5 - V
CC
= 3.0 V 2.1 - - 2.1 - 2.1 - V
V
CC
= 5.5 V 3.85 - - 3.85 - 3.85 - V
V
CC
V
= 2.0 V - - 0.5 - 0.5 - 0.5 V
CC
= 3.0 V - - 0.9 - 0.9 - 0.9 V
V
CC
= 5.5 V - - 1.65 - 1.65 - 1.65 V
V
CC
VI= VIH or V
IL
IO= 50 A; VCC= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
= 50 A; VCC= 3.0 V 2.9 3.0 - 2.9 - 2.9 - V
I
O
= 50 A; VCC= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 4.0 mA; VCC= 3.0 V 2.58 - - 2.48 - 2.40 - V
I
O
= 8.0 mA; VCC= 4.5 V 3.94 - - 3.8 - 3.70 - V
I
O
VI= VIH or V
IL
IO= 50 A; VCC= 2.0 V - 0 0.1 - 0.1 - 0.1 V
= 50 A; VCC= 3.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 50 A; VCC= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; VCC= 3.0 V - - 0.36 - 0.44 - 0.55 V
I
O
= 8.0 mA; VCC= 4.5 V - - 0.36 - 0.44 - 0.55 V
I
O
VI= VIH or VIL; VO = VCC or GND; V
CC
=5.5V
VI= 5.5 V or GND;
=0Vto5.5V
V
CC
--0.25 - 2.5 - 10 A
- - 0.1 - 1.0 - 2.0 A
- - 2.0 - 20 - 40 A
VCC=5.5 V
74AHC_AHCT1G126 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 8 — 23 August 2012 4 of 17
NXP Semiconductors
74AHC1G126; 74AHCT1G126
Bus buffer/line driver; 3-state
Table 7. Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
C
I
input
- 3 10 - 10 - 10 pF
capacitance
74AHCT1G126
V
IH
HIGH-level
V
= 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V
CC
input voltage
V
IL
LOW-level
V
= 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V
CC
input voltage
V
V
I
I
I
I
OH
OL
OZ
I
CC
CC
HIGH-level output voltage
LOW-level output voltage
OFF-state output current
input leakage current
VI= VIH or VIL; VCC= 4.5 V
= 50 A 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 8.0 mA 3.94 - - 3.8 - 3.70 - V
I
O
VI= VIH or VIL; VCC= 4.5 V
= 50 A - 0 0.1 - 0.1 - 0.1 V
I
O
= 8.0 mA - - 0.36 - 0.44 - 0.55 V
I
O
VI= VIH or VIL; VO = VCC or GND; VCC=5.5V
VI= 5.5 V or GND; VCC=0Vto5.5V
supply current VI=VCCor GND; IO = 0 A;
=5.5 V
V
CC
additional supply current
per input pin; VI=VCC 2.1 V; other inputs at V
or GND;
CC
--0.25 - 2.5 - 10 A
- - 0.1 - 1.0 - 2.0 A
- - 2.0 - 20 - 40 A
- - 1.35 - 1.5 - 1.5 mA
IO=0 A; VCC= 4.5 V to 5.5 V
C
I
input
- 3 10 - 10 - 10 pF
capacitance

11. Dynamic characteristics

Table 8. Dynamic characteristics
GND = 0 V; For test circuit see Figure 9
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
74AHC1G126
t
pd
propagation delay
74AHC_AHCT1G126 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 8 — 23 August 2012 5 of 17
.
Min Typ Max Min Max Min Max
AtoY; see Figure 7
VCC = 3.0 V to 3.6 V
[1] [2]
CL= 15 pF - 4.4 8.0 1.0 9.5 1.0 10.0 ns
= 50 pF - 6.3 11.5 1.0 13.0 1.0 14.5 ns
C
L
= 4.5 V to 5.5 V
V
CC
[3]
CL= 15 pF - 3.4 5.5 1.0 6.5 1.0 7.0 ns
= 50 pF - 4.7 7.5 1.0 8.5 1.0 9.5 ns
C
L
NXP Semiconductors
74AHC1G126; 74AHCT1G126
Bus buffer/line driver; 3-state
Table 8. Dynamic characteristics
…continued
GND = 0 V; For test circuit see Figure 9.
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
t
en
enable time OE to Y; see Figure 8
VCC = 3.0 V to 3.6 V
[1] [2]
CL= 15 pF - 4.9 8.0 1.0 9.5 1.0 10.0 ns
= 50 pF - 7.0 11.5 1.0 13.0 1.0 14.5 ns
C
L
= 4.5 V to 5.5 V
V
CC
[3]
CL= 15 pF - 3.6 5.6 1.0 6.3 1.0 7.0 ns
= 50 pF - 5.4 8.0 1.0 9.0 1.0 9.5 ns
C
L
t
dis
disable time OE to Y; see Figure 8
VCC = 3.0 V to 3.6 V
[1] [2]
CL= 15 pF - 6.3 9.7 1.0 11.5 1.0 12.5 ns
= 50 pF - 9.0 13.2 1.0 15.0 1.0 16.5 ns
C
L
= 4.5 V to 5.5 V
V
CC
[3]
CL= 15 pF - 4.3 6.8 1.0 8.0 1.0 8.5 ns
= 50 pF - 6.1 8.8 1.0 10.0 1.0 11.0 ns
C
L
C
PD
power dissipation capacitance
per buffer; CL=50pF;f=1 MHz; VI=GNDtoV
CC
[4]
-9- - - - -pF
74AHCT1G126
t
pd
propagation delay
AtoY; see Figure 7
VCC = 4.5 V to 5.5 V
[1] [3]
CL= 15 pF - 3.4 5.5 1.0 6.5 1.0 7.0 ns
= 50 pF - 4.7 7.5 1.0 8.5 1.0 9.5 ns
C
L
t
en
enable time OE to Y; see Figure 8
VCC = 4.5 V to 5.5 V
[1] [3]
CL= 15 pF - 3.4 5.6 1.0 6.3 1.0 6.5 ns
= 50 pF - 4.8 8.0 1.0 9.0 1.0 9.0 ns
C
L
t
dis
disable time OE to Y; see Figure 8
VCC = 4.5 V to 5.5 V
[1] [3]
CL= 15 pF 4.0 6.8 1.0 8.0 1.0 8.5 ns
= 50 pF 5.7 8.8 1.0 10.0 1.0 11.5 ns
C
L
74AHC_AHCT1G126 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 8 — 23 August 2012 6 of 17
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