The 74AHC1G09 is a high-speed Si-gate CMOS device.
The 74AHC1G09 provides the 2-input AND function with open-drain output.
The output of the 74AHC1G09 is an open drain and can be connected to other open-drain
outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For
digital operation this device must have a pull-up resistor to establish a logic HIGH level.
2.Features
■ High noise immunity
■ Low power dissipation
■ SOT353-1 and SOT753 package options
■ ESD protection:
◆ HBM JESD22-A114E: exceeds 2000 V
◆ MM JESD22-A115-A: exceeds 200 V
◆ CDM JESD22-C101C: exceeds 1000 V
■ Specified from −40 °Cto+85°C and from −40 °C to +125 °C.
3.Ordering information
Table 1.Ordering information
Type numberPackage
Temperature range NameDescriptionVersion
74AHC1G09GW−40 °C to +125 °CTSSOP5plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
74AHC1G09GV−40 °C to +125 °CSC-74Aplastic surface-mounted package; 5 leadsSOT753
Product data sheetRev. 02 — 18 December 20072 of 10
NXP Semiconductors
74AHC1G09
2-input AND gate with open-drain output
8.Limiting values
Table 5.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
SymbolParameterConditionsMinMaxUnit
V
V
V
I
IK
I
OK
I
O
I
CC
I
GND
T
P
CC
I
O
stg
tot
supply voltage−0.5+7.0V
input voltage
output voltageactive mode
high-impedance mode
input clamping currentVI< −0.5 V
output clamping currentVO< −0.5 V
[1]
−0.5+7.0V
[1]
−0.5+7.0V
[1]
−0.5+7.0V
[1]
-−20mA
[1]
-±20mA
output currentVO> −0.5 V-25mA
supply current-±75mA
GND current-±75mA
storage temperature−65+150°C
total power dissipationT
= −40 °C to +125 °C
amb
[2]
-250mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP5 and SC-74A packages: above 87.5 °C the value of P
Product data sheetRev. 02 — 18 December 20073 of 10
NXP Semiconductors
74AHC1G09
2-input AND gate with open-drain output
Table 7.Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol ParameterConditions25 °C−40 °C to +85 °C −40 °C to +125 °C Unit
Min TypMaxMinMaxMinMax
V
OL
I
I
I
OZ
I
CC
C
I
LOW-level
output voltage
input leakage
current
OFF-state
output current
VI= VIH or V
IL
IO= 50 µA; VCC= 2.0 V-00.1-0.1-0.1V
= 50 µA; VCC= 3.0 V-00.1-0.1-0.1V
I
O
= 50 µA; VCC= 4.5 V-00.1-0.1-0.1V
I
O
= 4.0 mA; VCC= 3.0 V--0.36-0.44-0.55V
I
O
= 8.0 mA; VCC= 4.5 V--0.36-0.44-0.55V
I
O
VI= 5.5 Vor GND;
V
= 0 V to 5.5 V
CC
VI= VIH or VIL; VO = VCC or
GND; V
CC
= 5.5 V
supply current VI=VCCor GND; IO = 0 A;
V
= 5.5 V
CC
input
--±0.1-±1.0-±2.0µA
--±0.25±2.5±10.0µA
--1.0-10-20µA
-1.510-10-10pF
capacitance
11. Dynamic characteristics
Table 8.Dynamic characteristics
GND = 0 V; for test circuit seeFigure 6.
Symbol ParameterConditions25 °C−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ MaxMinMaxMinMax
t
pd
propagation delay A and B to Y;
see
Figure 5
VCC = 3.0 V to 3.6 V
[1]
[2]
CL= 15 pF-4.67.51.08.51.09.0ns
= 50 pF-6.5 11.01.512.01.512.5ns
C
L
= 4.5 V to 5.5 V
V
CC
[3]
CL= 15 pF-3.25.51.06.51.07.0ns
= 50 pF-4.67.51.58.01.58.5ns
C
L
C
PD
power dissipation
capacitance
[1] tpd is the same as t
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPDis used to determine the dynamic power dissipation (PDin µW).
PD=CPD× V
fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC= supply voltage in V;
N = number of inputs switching;
(CL× V
CC
2
PZL
2
× fi× N + (CL× V
CC
× fo) = dissipation due to the output if the combination of the pull up voltage and resistance results in VCC at the output.
Product data sheetRev. 02 — 18 December 20074 of 10
NXP Semiconductors
12. Waveforms
V
I
A, B input
GND
V
CC
Y output
V
OL
Measurement points are given in Table 9.
VOL is the typical voltage output level that occur with the output load.
Fig 5. The data input (A, B) to output (Y) propagation delays
Table 9.Measurement points
InputOutput
V
M
0.5V
CC
V
M
0.5V
CC
V
M
t
PLZ
V
74AHC1G09
2-input AND gate with open-drain output
t
PZL
V
M
X
001aad602
V
X
VOL + 0.3 V
V
CC
PULSE
GENERATOR
V
I
R
D.U.T.
T
V
O
Test data is given in Table 10.
Definitions for test circuit:
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
Product data sheetRev. 02 — 18 December 20078 of 10
NXP Semiconductors
16. Legal information
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74AHC1G09
2-input AND gate with open-drain output
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