NXP 74AHC1G09GV, 74AHC1G09GW Schematic [ru]
74AHC1G09
2-input AND gate with open-drain output
Rev. 02 — 18 December 2007 Product data sheet
1. General description
The 74AHC1G09 is a high-speed Si-gate CMOS device.
The 74AHC1G09 provides the 2-input AND function with open-drain output.
The output of the 74AHC1G09 is an open drain and can be connected to other open-drain
outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For
digital operation this device must have a pull-up resistor to establish a logic HIGH level.
2. Features
■ High noise immunity
■ Low power dissipation
■ SOT353-1 and SOT753 package options
■ ESD protection:
◆ HBM JESD22-A114E: exceeds 2000 V
◆ MM JESD22-A115-A: exceeds 200 V
◆ CDM JESD22-C101C: exceeds 1000 V
■ Specified from −40 °Cto+85°C and from −40 °C to +125 °C.
3. Ordering information
Table 1. Ordering information
Type number Package
Temperature range Name Description Version
74AHC1G09GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
74AHC1G09GV −40 °C to +125 °C SC-74A plastic surface-mounted package; 5 leads SOT753
SOT353-1
4. Marking
Table 2. Marking
Type number Marking code
74AHC1G09GW A9
74AHC1G09GV A09
NXP Semiconductors
74AHC1G09
2-input AND gate with open-drain output
5. Functional diagram
1
B
2
A
4
001aad598
Y
1
2
&
001aad599
4
Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram
A
B
6. Pinning information
6.1 Pinning
Y
GND
001aad600
1
BV
2
A
GND Y
09
3
001aad601
5
CC
4
Fig 4. Pin configuration SOT353-1 (TSSOP5) and SOT753 (SC-74A)
6.2 Pin description
Table 3. Pin description
Symbol Pin Description
B 1 data input B
A 2 data input A
GND 3 ground (0 V)
Y 4 data output Y
V
CC
5 supply voltage
7. Functional description
Table 4. Function table
Input Output
A B Y
LLL
LHL
HLL
HHZ
[1]
[1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.
74AHC1G09_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 18 December 2007 2 of 10
NXP Semiconductors
74AHC1G09
2-input AND gate with open-drain output
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
V
V
I
IK
I
OK
I
O
I
CC
I
GND
T
P
CC
I
O
stg
tot
supply voltage −0.5 +7.0 V
input voltage
output voltage active mode
high-impedance mode
input clamping current VI< −0.5 V
output clamping current VO< −0.5 V
[1]
−0.5 +7.0 V
[1]
−0.5 +7.0 V
[1]
−0.5 +7.0 V
[1]
- −20 mA
[1]
- ±20 mA
output current VO> −0.5 V - 25 mA
supply current - ±75 mA
GND current - ±75 mA
storage temperature −65 +150 °C
total power dissipation T
= −40 °C to +125 °C
amb
[2]
- 250 mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP5 and SC-74A packages: above 87.5 °C the value of P
derates linearly with 4.0 mW/K.
tot
9. Recommended operating conditions
Table 6. Recommended operating operations
Symbol Parameter Conditions Min Typ Max Unit
V
CC
V
I
V
O
supply voltage 2.0 5.0 5.5 V
input voltage 0 - 5.5 V
output voltage active mode 0 - V
CC
V
high-impedance mode 0 - 6.0 V
T
amb
∆t/∆V input transition rise and fall rate V
ambient temperature −40 +25 +125 °C
= 3.0 V to 3.6 V - - 100 ns/V
CC
= 4.5 V to 5.5 V - - 20 ns/V
V
CC
10. Static characteristics
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
V
IH
HIGH-level
input voltage
V
IL
LOW-level
input voltage
VCC= 2.0 V 1.5 - - 1.5 - 1.5 - V
= 3.0 V 2.1 - - 2.1 - 2.1 - V
V
CC
= 5.5 V 3.85 - - 3.85 - 3.85 - V
V
CC
VCC= 2.0 V - - 0.5 - 0.5 - 0.5 V
= 3.0 V - - 0.9 - 0.9 - 0.9 V
V
CC
= 5.5 V - - 1.65 - 1.65 - 1.65 V
V
CC
74AHC1G09_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 18 December 2007 3 of 10
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