NTE NTE5538 Datasheet
NTE5538
Silicon Controlled Rectifier (SCR)
800V
Description:
The NTE5538 general purpose SCR is suited for power supplies up to 400HZ on resistive or inductive
loads.
Features:
D Glass Passivated Chip
D High Stability and Reliability
D High Surge Capability
D High On–State Current
D Easy Mounting on Heatsink
D Isolated Package: Insulating Voltage 2500V
Absolute Maximum Ratings:
Peak Forward Blocking Voltage (TJ = +125°C), V
Peak Reverse Blocking Voltage (T
RMS On–State Current (T
= +70°C, Note 1), I
C
Average On–State Current (T
Non–Repetitive Surge Peak On–State Current (T
(t = 8.3ms) 525A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(t = 10ms) 500A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
t Value (t = 10ms), I2t 1250A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
Critical Rate of Rise of On–State Current (Note 3), di/dt 100A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage and Operating Junction Temperature Range, T
Thermal Resistance
Junction–to–Case for DC, R
Contact (Case–to–Heatsink), R
= +125°C), V
J
= +70°C, Note 1), I
C
thJC
thCH
, 50A
DRM
RMS
DRM
RRM
T (RMS)
T(AV)
initial = +25°C, Note 2), I
J
, T
stg
J
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TSM
–40° to +125°C. . . . . . . . . . . . . . . . . .
1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Single phase circuit, 180° conducting angle.
Note 2. Half sine wave.
Note 3. I
Gate Characteristics:
Peak Gate Power (t = 10µs), P
Average Gate Power Dissipation, P
Peak Forward Gate Current (t = 10µs), I
Peak Forward Gate Voltage (t = 10µs), V
Peak Reverse Gate Voltage, V
= 800mA, diG/dt = 1A/µs.
G
(Maximum Values)
GM
RGM
G (AV)
FGM
FGM
50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Gate Trigger Current I
Gate Trigger Voltage V
Gate Non–Trigger Voltage V
Holding Current I
Peak On–State Voltage V
Forward Leakage Current I
Reverse Leakage Current I
Total Turn–On Time t
Turn–Off Time t
Critical Rate of Rise of
Off–State Voltage
dv/dt TJ = +125°C, V
DRM
RRM
VD = 12V, RL = 33Ω, tp ≥ 20µs – – 80 mA
GT
GT
TJ = +125°C, VD = 800V, RL = 3.3kΩ 0.2 – – V
GD
IT = 0.5A, Gate Open – 20 150 mA
H
TMITM
gt
q
= 100A, tp = 10ms – – 1.9 V
V
= 800V – – 0.02 mA
DRM
TJ = +125°C – – 6.0 mA
V
= 800V – – 0.02 mA
DRM
TJ = +125°C – – 6.0 mA
IT = 80A, VD = 800V, IG = 200mA, diG/dt = 0.2A/µs – 2 – µs
TJ = +125°C, IT = 80A, VR = 75V, VD = 536V,
/dt = 30A/µs, dv/dt = 20V/µs, Gate Open
di
R
= 536V, Gate Open,
Linear Slope Up
DRM
– – 1.5 V
– 100 – µs
500 – – V/µs
.600 (15.24)
Isol
.156
(3.96)
Dia.
KAG
.060 (1.52)
.173 (4.4)
.550
(13.97)
.430
(10.92)
.500
(12.7)
Min
.055 (1.4) .015 (0.39)
.215 (5.45)
NOTE: Dotted line indicates
that case may have square
corners.
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