NTE NTE5515, NTE5514, NTE5516 Datasheet
NTE5514 thru NTE5516
Silicon Controlled Rectifier (SCR)
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C), V
DRM
NTE5514 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5515 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5516 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage (TJ = +100°C), V
RRM
NTE5514 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5515 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5516 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +75°C), I
T(RMS)
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), I
TSM
200A. . . . . . . . .
Peak Gate–Trigger Current (3µs Max), I
GTM
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate–Power Dissipation (IGT ≤ I
GTM
for 3µs Max), P
GM
20W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate–Power Dissipation, P
G(AV)
0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperatue Range, T
opr
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Case, R
thJC
1.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current I
DRM
,
I
RRM
TJ = +100°C, Gate Open,
V
DRM
and V
RRM
= Max. Rating
– – 2.0 mA
Maximum On–State Voltage (Peak) V
TM
TC = +25°C – – 1.9 V
Peak On–State Current I
TM
– – 40 A
DC Holding Current I
H
TC = +25°C, Gate Open – – 50 mA
DC Gate–Trigger Current I
GT
Anode Voltage = 12V, RL = 30Ω, TC = +2 5°C – – 25 mA
DC Gate–Trigger Voltage V
GT
Anode Voltage = 12V, RL = 30Ω, TC = +2 5°C – – 2.0 V
Gate Controlled Turn–On Time t
gt
td + tr, IGT = 150mA – 2.5 – µs
Critical Rate–of–Rise of
Off–State V oltage
Critical
dv/dt
TC = +100°C, Gate Open – 100 – V/µs
.155 (3.93) Max
Cathode
Gate
.063 (1.6)
Anode
.085
(2.15)
.475 (12.09)
Max
.505 (12.85)
Max
.380
(9.65)
Max
.767
(19.5)
Max
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