NTE NTE54, NTE55 Datasheet
NTE54 (NPN) & NTE55 (PNP)
Silicon Complementary Transistors
High Frequency Driver for Audio Amplifier
Description:
The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case
designed for use as a high frequency driver in audio amplifier applications.
Features:
D DC Current Gain Specified to 4A:
hFE= 40 Min @ IC = 3A
= 20 MIn @ I
D Collector–Emitter Sustaining Voltage: V
D High Current Gain–Bandwidth Product: f
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
Derate Above 25°C 0.04W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
Derate Above 25°C 0.016W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
= 4A
C
CEO
CBO
EB)
= +25°C), P
C
= +25°C), P
A
stg
CEO(sus)
= 30MHz Min @ IC = 500mA
T
= 150V Min
150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
J
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
thJA
+2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
mentary pairs have their gain specification (h
) matched to within 10% of each other.
FE
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
CE(sus)IC
Collector Cutoff Current I
I
Emitter Cutoff Current I
ON Characteristics (Note 2)
DC Current Gain h
DC Current Gain Linearity h
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
CE(sat)IC
BE(on)VCE
Dynamic Characteristics
Current Gain–Bandwidth Product f
CEO
CBO
EBO
FE
FE
t
= 10mA, IB = 0, Note 2 150 – – V
VCE = 150V, IB = 0 – – 0.1 mA
VCE = 150V, IE = 0 – – 10 µA
VCE = 150V, IC = 0 – – 10 µA
VCE = 2V, IC = 0.1A 40 – –
VCE = 2V, IC = 2A 40 – –
VCE = 2V, IC = 0.1A 40 – –
VCE = 2V, IC = 0.1A 20 – –
VCE from 2V to 20V,
from 0.1A to 3A
I
C
– 2 –
NPN to PNP – 3 –
= 1A, IB = 0.1A – – 0.5 V
= 2V, IC = 1A – – 1 V
VCE = 10V, IC = 500mA,
= 10MHz, Note 3
f
test
30 – – MHz
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. f
= |hfe| f
T
test
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Base
.420 (10.67)
Max
.250 (6.35)
Max
Emitter
Collector/Tab
.110 (2.79)
.500
(12.7)
Max
.500
(12.7)
Min
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