NTE NTE5498, NTE5499 Datasheet
NTE5498 & NTE5499
Silicon Controlled Rectifier (SCR)
12 Amp
Description:
The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage (T
(TA = +25°C unless otherwise specified)
= –40° to +125°C, RGK = 1kΩ), V
J
NTE5498 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5499 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (All Conduction Angles, T
Average On–State Current (Half Cycle, 180° Conduction Angle, T
Non–Repetitive On–State Current (Half Cycle, 60Hz), I
Non–Repetitive On–State Current (Half Cycle, 50Hz), I
Circuit Fusing Considerations (Half Cycle, t = 10ms), I
Peak Gate Current (10µs Max), I
Peak Gate Dissipation (10µs Max), P
Average Gate Dissipation (20ms Max), P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
GM
GM
G(AV)
J
stg
thJC
Thermal Resistance, Junction–to–Ambient, R
C
thJA
= +85°C), I
TSM
TSM
2
t 72A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T(RMS)
= +85°C), I
C
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
(TA = +25°C unless otherwise specified)
DRM
L
, V
RRM
T(AV)
12A. . . . . . . . . . . . . . . . . . . . .
7.6A. . . . . . . .
132A. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120A. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+250°C. . . . . . . . . . . . . . .
Off–State Leakage Current
On–State Voltage V
On–State Threshold Voltage V
On–State Slope Resistance
Gate–Trigger Current I
Gate–Trigger Voltage V
I
DRM
I
RRM
T(TO)
r
T
GT
GT
, V
T
+ V
DRM
IT = 24A, TJ = +25°C – – 1.8 V
TJ = +125°C – – 1.0 V
TJ = +125°C – – 36 mΩ
VD = 7V 5 – 10 mA
VD = 7V – – 2.0 V
, RGK = 1kΩ
RRM
TJ = +125°C – – 1.5 mA
TJ = +25°C – – 5.0 µA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Holding Current I
Latching Current I
Critical Rate of Voltage Rise dv/dt VD = .67 x V
RGK = 1kΩ – – 40 mA
H
RGK = 1kΩ – – 30 mA
L
, RGK = 1kΩ, TJ = +125°C 100 – – V/µs
DRM
Critical Rate of Current Rise di/dt IG = 50mA, diG/dt = 0.5A/µs, TJ = +125°C 100 – – A/µs
Gate Controlled Delay Time t
Commutated Turn–Off Time t
gd
IG = 50mA, diG/dt = 0.5A/µs – – 500 ns
q
VD = .67 x V
, VR = 35V, IT = I
DRM
T(AV)
,
– – 50 µs
TC = +85°C
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
Anode
.500
(12.7)
Max
.070 (1.78) Max
Cathode
.100 (2.54) Anode
.250 (6.35)
Max
.500
(12.7)
Min
Gate
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