NTE NTE5498, NTE5499 Datasheet

NTE5498 & NTE5499

Silicon Controlled Rectifier (SCR)

12 Amp

Description:

The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.

Absolute Maximum Ratings:

Peak Repetitive Off–State Voltage (T

(TA = +25°C unless otherwise specified)

= –40° to +125°C, RGK = 1kΩ), V

J

NTE5498 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5499 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS On–State Current (All Conduction Angles, T
Average On–State Current (Half Cycle, 180° Conduction Angle, T
Non–Repetitive On–State Current (Half Cycle, 60Hz), I
Non–Repetitive On–State Current (Half Cycle, 50Hz), I
Circuit Fusing Considerations (Half Cycle, t = 10ms), I
Peak Gate Current (10µs Max), I
Peak Gate Dissipation (10µs Max), P
Average Gate Dissipation (20ms Max), P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

GM

GM

G(AV)

J

stg

thJC

Thermal Resistance, Junction–to–Ambient, R

C

thJA

= +85°C), I

TSM
TSM

2

t 72A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T(RMS)

= +85°C), I

C

Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

(TA = +25°C unless otherwise specified)

DRM

L

, V

RRM

T(AV)

12A. . . . . . . . . . . . . . . . . . . . .

7.6A. . . . . . . .

132A. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

120A. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+250°C. . . . . . . . . . . . . . .

Off–State Leakage Current

On–State Voltage V
On–State Threshold Voltage V
On–State Slope Resistance
Gate–Trigger Current I
Gate–Trigger Voltage V

I

DRM

I

RRM

T(TO)

r

T

GT

GT

, V

T

+ V

DRM

IT = 24A, TJ = +25°C – – 1.8 V
TJ = +125°C – – 1.0 V
TJ = +125°C – – 36 mΩ
VD = 7V 5 – 10 mA
VD = 7V – – 2.0 V

, RGK = 1kΩ

RRM

TJ = +125°C – – 1.5 mA
TJ = +25°C – – 5.0 µA

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Holding Current I
Latching Current I
Critical Rate of Voltage Rise dv/dt VD = .67 x V

RGK = 1kΩ – – 40 mA

H

RGK = 1kΩ – – 30 mA

L

, RGK = 1kΩ, TJ = +125°C 100 – – V/µs

DRM

Critical Rate of Current Rise di/dt IG = 50mA, diG/dt = 0.5A/µs, TJ = +125°C 100 – – A/µs
Gate Controlled Delay Time t
Commutated Turn–Off Time t

gd

IG = 50mA, diG/dt = 0.5A/µs – – 500 ns

q

VD = .67 x V

, VR = 35V, IT = I

DRM

T(AV)

,

– – 50 µs

TC = +85°C

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

Anode

.500

(12.7)

Max

.070 (1.78) Max

Cathode

.100 (2.54) Anode

.250 (6.35)

Max

.500

(12.7)

Min

Gate