NTE NTE5494, NTE5492, NTE5491 Datasheet
NTE5491 thru NTE5496
Silicon Controlled Rectifier (SCR)
10 Amp
Description:
The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC
control applications such as motor controls, heating controls, power supplies, or wherever half–wave
silicon gate–controlled, solid–state devices are needed.
Features:
D Glass–Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D Blocking Voltage to 600 Volts
Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified)
Peak Repetitive Off–State Blocking Voltage, V
NTE5491 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5492 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5494 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5496 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Non–Repetitive Reverse Voltage, V
RSM
NTE5491 150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5492 300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5494 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5496 720V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (All Conduction Angles), I
Average On–State Current (TC = +65°C), I
Peak Non–Repetitive Surge Current, I
T(AV)
TSM
(One cycle, 60Hz, Preceeded and followed by rated Current and Voltage) 150A. . . . . . . . . .
Circuit Fusing Considerations (TJ = –40° to +125°C, t = 1 to 8.3ms), I2t 93A2s. . . . . . . . . . . . . . . . .
Peak Gate Power Dissipation, P
Average Gate Power Dissipation, P
Peak Forward Gate Current, I
GM
G(AV)
GT
NTE5491, NTE5492, NTE5494 2.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5496 1.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
J
Typical Thermal Resistance, Junction–to–Case, R
Stud Torque 30 in.lb.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
, V
DRM
T(RMS)
thJC
25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Average Forward Blocking Current
NTE5491
I
D(AV)
Rated V
T
= +125°C – – 6.5 mA
J
, Gate Open
DRM
NTE5492 – – 6.0 mA
NTE5494 – – 4.0 mA
NTE5496 – – 2.5 mA
Average Reverse Blocking Current
NTE5491
I
R(AV)
Rated V
T
= +125°C – – 6.5 mA
J
, Gate Open
RRM
NTE5492 – – 6.0 mA
NTE5494 – – 4.0 mA
NTE5496 – – 2.5 mA
Peak Forward Blocking Current I
Peak Reverse Blocking Current I
Peak On–State Voltage V
DC Gate–Trigger Current I
DC Gate–Trigger Voltage V
Gate Non–Trigger Voltage V
DC Holding Current I
Critical Rate–of–Rise of Off–State
dv/dt Rated V
Voltage
DRM
RRM
TM
GT
GT
GD
Rated V
Rated V
T
= +125°C
J
, Gate Open – – 10 µA
DRM
, Gate Open,
RRM
– – 20 mA
ITM = 50.3A Peak, Note 1 – – 2 V
VAK = 12VDC, RL = 50Ω – – 40 mA
VAK = 12VDC, RL = 50Ω – 0.65 2.0 V
Rated V
VAK = 12V, Gate Open – 7.3 50 mA
H
T
= +125°C, Gate Open
C
, RL = 50Ω, TJ = +1 25°C 0.25 – – V
DRM
, Exponential Waveform,
DRM
– 30 – V/µs
Note 1. Pulse Test: Pulse Width ≤ 1ms, Duty Cycle ≤ 2%.
.562
(14.28)
Max
1.193
(30.33)
Max
.453
(11.5)
Max
CathodeGate
.200 (5.08) Max
Anode
1/4–28 UNF–2A
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