NTE NTE5487, NTE5486, NTE5485, NTE5482, NTE5481 Datasheet
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NTE5480 thru NTE5487
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type
package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V.
Features:
D Uniform Low–Level Noise–Immune Gate Triggering: IGT = 10mA Typ @ TC = +25°C
D Low Forward “ON” Voltage: vT = 1V Typ @ 5A @ +25°C
D High Surge–Current Capability: I
D Shorted Emitter Construction
Absolute Maximum Ratings: (TJ = –40° to +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V
NTE5480 25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5481 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5482 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5483 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5484 300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5485 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5486 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5487 (This device is discontinued) 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current RMS, I
T(RMS)
Peak Forward Surge Current (One Cycle, 60Hz, TJ = –40° to +100°C, I
Circuit Fusing (t ≤ 8.3ms, TJ = –40° to +100°C), I2t 40A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power, P
Average Gate Power, P
Peak Gate Current, I
Peak Gate Voltage (Note 2), V
Operating Temperature Range, T
Storage Temperature Range, T
GM
G(AV)
GM
GM
J
stg
Typical Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Case–to–Ambient, R
= 100A Peak
TSM
thJC
thJA
DRM
or V
TSM
RRM
8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100A. . . . . . . . . . . . . . .
5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a
negative potential applied to the anode.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward or Rever se I
Blocking Current I
Gate Trigger Current (Continuous DC)
Gate Trigger Voltage (Continuous DC) V
, Rated V
DRM
RRM
I
GT
GT
or V
DRM
Gate Open
VD = 7V, RL = 100Ω,
Note 3
VD = 7V, RL = 100Ω – 0.75 1.5 V
TJ = +25°C – – 10 µA
,
RRM
TJ = +100°C – – 2 mA
– 10 30 mA
TC = –40°C – – 60 mA
TC = –40°C – – 2.5 V
TJ = +1 00°C 0.2 – – V
Forward “ON” Voltage v
Holding Current I
TMITM
H
= 15.7A, Note 4 – 1.4 2.0 V
VD = 7V, Gate Open – 10 30 mA
TC = –40°C – – 60 mA
Turn–On Time (td + tr) t
Turn–Off Time t
Forward Voltage Application Rate
(Exponential)
dv/dt Gate Open, TJ = +100°C,
IG = 20mA, IF = 5A, VD = Rated V
on
IF = 5A, IR = 5A,
off
dv/dt = 30V/µs
VD = Rated V
DRM
DRM
TJ = +100°C,
VD = Rated V
– 1 – µs
– 15 – µs
– 25 – µs
DRM
– 50 – V/µs
Note 3. For optimum operation, i.e. faster turn–on, lower switching losses, best di/dt capability, rec-
ommended IGT = 200mA minimum.
Note 4. Pulsed, 1ms max., Duty Cycle ≤ 1%.
.431
(10.98
Max
.855
(21.7)
Max
.453
(111.5)
Max
CathodeGate
.125 (3.17) Max
Anode
10–32 UNF–2A
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