NTE NTE5471, NTE5475, NTE5473, NTE5474, NTE5472 Datasheet
NTE5470 thru 5476
Silicon Controlled Rectifier (SCR)
5 Amp
Description:
The NTE5470 through NTE5476 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type
stud mount package suitable for industrial and consumer applications.
Features:
D Uniform Low–Level Noise–Immune Gate Triggering
D Low Forward “ON” Voltage
D High Surge–Current Capability
Absolute Maximum Ratings: (Apply over operating temperature range unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V
DRM
, V
RRM
NTE5470 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5471 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5472 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5473 300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5474 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5475 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5476 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current RMS, ITRMS 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Surge Current (One Cycle, 60Hz, TJ = –40° to +100°C), I
TSM
100A. . . . . . . . . . . . . .
Circuit Fusing (TJ = –40° to +100°C, t ≤ 8.3ms), I2t 40A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power, P
GM
5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power, P
G(AV)
0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, I
GM
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Voltage (Note 2), V
GM
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
J
–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stud Torque 15 in. lb.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a
negative potential applied to the anode.
Electrical Characteristics: (TC = +25°C unles otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward or Reverse Blocking Current
I
DRM
, Rated V
DRM
or V
RRM
,
TJ = +25°C – – 10 µA
I
RRM
Gate Open
TJ = +100°C – – 2 mA
Gate Trigger Current, Continuous DC I
GT
VD = 7V, RL = 100Ω,
– 10 30 mA
Note 3
TC = –40°C – – 60 mA
Gate Trigger Voltage, Continuous DC V
GT
VD = 7V, RL = 100Ω
– 0.75 1.5 V
TC = –40°C – – 2.5 V
TJ = +100°C 0.2 – – V
Forward “ON” Voltage v
TMITM
= 15.7A, Note 4 – 1.4 2.0 V
Holding Current I
H
VD = 7V, Gate Open
– 10 30 mA
TC = –40°C – – 60 mA
Turn–On T ime (td + tr) t
on
IG = 20mA, IF = 5A, VD = Ra ted V
DRM
– 1 – µs
Turn–Off Time t
off
IF = 5A, IR = 5A,
– 15 – µs
VD = Ra ted V
DRM
,
dv/dt = 30V/µs
TJ = +100°C – 25 – µs
Forward Voltage Application Rate
(Exponential)
dv/dt Gate Open, TJ = +100°C,
VD = Rated V
DRM
– 50 – V/µs
Note 3. For opt imum ope ration , i.e. fa ster tur n–on, lower switching losses, best di/dt capability,
recommended IGT = 200mA minimum.
Note 4. Pulsed, 1ms Max, Duty Cycle ≤ 1%.
.125 (3.17) Max
.431
(10.98
Max
.855
(21.7)
Max
.453
(111.5)
Max
10–32 UNF–2A
Anode
CathodeGate
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