NTE NTE5471, NTE5475, NTE5473, NTE5474, NTE5472 Datasheet

NTE5470 thru 5476

Silicon Controlled Rectifier (SCR)

5 Amp

Description:

The NTE5470 through NTE5476 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type
stud mount package suitable for industrial and consumer applications.

Features:

D Uniform Low–Level Noise–Immune Gate Triggering
D Low Forward “ON” Voltage
D High Surge–Current Capability

Absolute Maximum Ratings: (Apply over operating temperature range unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V

DRM

, V

RRM

NTE5470 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5471 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5472 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5473 300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5474 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5475 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5476 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Current RMS, ITRMS 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Forward Surge Current (One Cycle, 60Hz, TJ = –40° to +100°C), I

TSM

100A. . . . . . . . . . . . . .

Circuit Fusing (TJ = –40° to +100°C, t ≤ 8.3ms), I2t 40A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Gate Power, P

GM

5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Average Gate Power, P

G(AV)

0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Gate Current, I

GM

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Gate Voltage (Note 2), V

GM

10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range, T

J

–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

stg

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Case, R

thJC

2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Stud Torque 15 in. lb.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking

capability in a manner such that the voltage applied exceeds the rated blocking voltage.

Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a

negative potential applied to the anode.

Electrical Characteristics: (TC = +25°C unles otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Forward or Reverse Blocking Current

I

DRM

, Rated V

DRM

or V

RRM

,

TJ = +25°C – – 10 µA

I

RRM

Gate Open

TJ = +100°C – – 2 mA

Gate Trigger Current, Continuous DC I

GT

VD = 7V, RL = 100Ω,

– 10 30 mA

Note 3

TC = –40°C – – 60 mA

Gate Trigger Voltage, Continuous DC V

GT

VD = 7V, RL = 100Ω

– 0.75 1.5 V
TC = –40°C – – 2.5 V
TJ = +100°C 0.2 – – V

Forward “ON” Voltage v

TMITM

= 15.7A, Note 4 – 1.4 2.0 V

Holding Current I

H

VD = 7V, Gate Open

– 10 30 mA
TC = –40°C – – 60 mA

Turn–On T ime (td + tr) t

on

IG = 20mA, IF = 5A, VD = Ra ted V

DRM

– 1 – µs

Turn–Off Time t

off

IF = 5A, IR = 5A,

– 15 – µs

VD = Ra ted V

DRM

,

dv/dt = 30V/µs

TJ = +100°C – 25 – µs

Forward Voltage Application Rate

(Exponential)

dv/dt Gate Open, TJ = +100°C,

VD = Rated V

DRM

– 50 – V/µs

Note 3. For opt imum ope ration , i.e. fa ster tur n–on, lower switching losses, best di/dt capability,

recommended IGT = 200mA minimum.

Note 4. Pulsed, 1ms Max, Duty Cycle ≤ 1%.

.125 (3.17) Max

.431

(10.98

Max

.855

(21.7)

Max

.453

(111.5)

Max

10–32 UNF–2A

Anode

CathodeGate