NTE NTE5466, NTE5463, NTE5465, NTE5468, NTE5462 Datasheet
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NTE5461 thru NTE5468
Silicon Controlled Rectifier (SCR)
10 Amp
Description:
The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–
wave AC control applications such as motor controls, heating controls, and power supplies; or wherever half–wave silicon gate–controlled, solid–state devices are needed. These devices are supplied
in a TO220 type package.
Features;
D Glass Passivated Junction s and Center Gate Fire for Greater Paramete r Uniformity and Stability
D Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation,
and Durability
D Blocking Voltage to 800 Volts
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage; Peak Repetitive Off–State Voltage (Note 1), V
NTE5461 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5462 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5463 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5465 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5466 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5468 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak Reverse Voltage; Non–Repetitive Off–State Voltage, V
RSM
NTE5461 75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5462 125V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5463 250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5465 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5466 700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5468 900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Forward Current (All Conducting Angles, TC = +75°C), I
Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, TC = +80°C), I
T(RMS)
TSM
Circuit Fusing Considerations (TJ = –65° to +100°C, t = 1 to 8.3ms), I2t 40A2s. . . . . . . . . . . . . . . . .
Forward Peak gate Power (t ≤ 10µs), P
Forward Average Gate Power, P
G(AV)
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
GM
J
thJC
RRM
, V
–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, V
DSM
DRM
10A. . . . . . . . . . . . . . . . . . . . . .
100A. . . . . . . . . . . . . .
16W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. V
age. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias
applied to the gate concurrently with a negative potential on the anode.
DRM
and V
for all types can be applied on a continuous DC basis without incurring dam-
RRM
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward or Reverse Blocking I
Current I
DRM
RRM
Instantaneous On–State Voltage V
Gate Trigger Current (Continuous DC) I
Gate Trigger Voltage (Continuous DC) V
Holding Current I
Gate Controlled Turn–On Time t
Circuit Commutated Turn–Off Time t
Critical Rate–of–Rise of Off–State
dv/dt VD = Rated V
Voltage
,
Rated V
DRM
or V
RRM
TC = +25°C – – 10 µA
TC = +100°C – – 2 mA
T
ITM = 30A
, Pulse Width ≤ 1ms,
(Peak)
– 1.7 2.0 V
Duty Cycle ≤ 2%
VD = 12V, RL = 30Ω – 8 15 mA
GT
VD = 12V, RL = 30Ω – 0.9 1.5 V
GT
Gate Open, VD = 12V, IT = 150mA – 10 20 mA
H
gt
q
VD = Rate d V
VD = V
DRM
, ITM = 2A, IGR = 80mA – 1.6 – µs
DRM
, ITM = 2A, Puls e Width = 50µs,
– 25 – µs
dv/dt = 200V/µs, di/dt = 10A/µs,
TC = +7 5°C
, Exponential Rise,
DRM
– 100 – V/µs
TC = +100°C
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Cathode
.100 (2.54) Anode
Anode
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Gate
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