NTE NTE5460 Datasheet
NTE5460
Silicon Controlled Rectifier (SCR)
Description:
The NTE5460 is designed primarily for half–wave AC control applications such as motor controls,
heating controls, and power supply crowbar circuits.
Features:
D Glass Passivated Junction with Center Gate Fire for Greater Paramete r Uniformity and Stability
D Small, Rugged Construction for Low Thermal Resistance, High Heat Dissipation, and Durability
D 300A Surge Current Capability
D Insulated Package Simplifies Mounting
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, Note 1), V
Repetitive Peak Reverse Voltage (TJ = –40° to +125°C, Note 1), V
On–State RMS Current (TC = +70°C, Full Cycle Sine Wave 50 to 60Hz, Note 2), I
Peak Non–Repetitive Surge Current, I
TSM
DRM
RRM
T(RMS)
(One Full Cycle, 60Hz, TC = +70°C, Preceeded and Followed by Rated Current) 300A. . . .
Circuit Fusing (t = 8.3ms), I2t 375A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power (TC = +70°C, Pulse Width = 10µs), P
Average Gate Power (TC = +70°C, t = 8.3ms), P
G(AV)
Peak Gate Current (TC = +70°C, Pulse Width = 10µs), I
RMS Isolation Voltage (TA = +25°C, Relative Humidity ≤ 20%), V
Operating Junction Temperature, T
Storage Temperature Range, T
J
stg
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Case–to–Sink, R
thCS
Maximum Thermal Resistance, Junction–to–Ambient, R
GM
GM
(ISO)
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
thJA
800V. . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . .
25A. . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500V. . . . . . . . . . . . . . . . . . .
1.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 2. The case temperature reference point for all TC measurements is a point on the center lead
of the package as close as possible to the plastic body.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward Blocking Current I
Peak Reverse Blocking Current I
Forward “ON” Voltage V
DC Gate Trigger Current I
DC Gate Trigger Voltage V
Gate Non–Trigger Voltage V
Holding Current I
Turn–On Time t
Turn–Off Time t
Critical Rate of Rise of
Off–State Voltage
dv/dt Gate Open, V
DRM
RRM
V
= 800V, TJ = +25°C – – 10 µA
DRM
V
= 800V, TJ = +125°C – – 2 mA
DRM
V
= 800V, TJ = +125°C – – 2 mA
RRM
TMITM
GT
GT
GD
H
gt
q
= 50A, Note 3 – – 1.8 V
Anode Voltage = 12V, RL = 100Ω – – 40 mA
Anode Voltage = 12V, RL = 100Ω – 0.8 1.5 V
Anode Voltage = 800V, RL = 100Ω, TJ = +1 25°C 0.2 – – V
Anode Voltage = 12V – 20 40 mA
ITM = 25A, IGT = 40mA – 1.5 – µs
V
= 800V, ITM = 25A, IR = 25A – 15 – µs
DRM
V
= 800V, ITM = 25A, IR = 25A, TJ = +1 25°C – 35 – µs
DRM
= 800V, Exponential Waveform – 100 – V/µs
DRM
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
.531
(13.5)
Min
.114 (2.9) Max
.122 (3.1)
Dia
.165
(4.2)
KAG
.100 (2.54) .059 (1.5) Max
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