NTE NTE5440 Datasheet
NTE5440
Silicon Controlled Rectifier (SCR)
800V, 10A, Isolated Tab
Applications:
D Temperature Control
D Motor Control
D Transformerless Power Supply Regulators
D Relay and Coil Pulsing
D Power Supply Crowbar Protection
Absolute Maximum Ratings:
Anode to Cathode
Non–Repetitive Peak Voltages (t ≤ 10ms, Note 1), V
Repetitive Peak Voltages (δ ≤ 0.01), V
Peak Working Voltages, V
Continuous Voltages, VD, V
Average On–State Current, I
DWM
R
T(AV)
, V
RWM
DRM
, V
RRM
(Averaged over any 20ms period) up to Th = +74°C 5.7A. . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current, I
Repetitive Peak On–State Current, I
Non–Repetitive Peak On–State Current, I
T(RMS)
TRM
TSM
(t = 10ms, Half–Sinewave, TJ = +110°C prior to surge, with Reapplied V
I2t for Fusing (t = 10ms), I2t 50A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Rate of Rise of On–State Current after Triggering, dIT/dt
(IG = 50mA to IT = 20A, dIG/dt = 50mA/µs) 50A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate to Cathode
Reverse Peak Voltage, V
RGM
Average Power Dissipation (Averaged over any 20ms period), P
Peak Power Dissipation, P
GM
Temperatures
Operating Junction Temperature, T
Storage Temperature Range, T
J
stg
Maximum Lead Temperature (During Soldering, less than 5sec) +275°C. . . . . . . . . . . . . . . . . . . .
DSM
, V
RSM
RWMmax
G(AV)
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
) 100A.
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . .
5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Although not recommended, higher Off–State voltages may be applied without damage, but
the thyristor may switch into the On–State. The Rate–of–Rise of On–State current should
not exceed 15A/µs.
Absolute Maximum Ratings (Cont’d):
Isolation:
Minimum From all Three Pins to External Heatsink (Peak), V
Typical Capacitance from Anode to External Heatsink, C
Thermal Characteristics:
Thermal Resistance from Junction to External Heatsink, R
With Heatsink Compound 4.5K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Without Heatsink Compound 6.5K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance from Junction–to–Ambient in Free Air, R
(Mounted on a printed circuit board at a = any lead length
and with copper laminate, Note 2) 55K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
isol
isol
thj–h
1000V. . . . . . . . . . . . . . . . . . . . .
12pf. . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
Note 2. The quoted values of R
should be used only when no leads of other dissipating compo-
thJA
nents run to the same tie–point.
Electrical Characteristics: (TJ = +110°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Anode to Cathode
On–State Voltage V
Rate of Rise of Off–State dVD/dt
Voltage that will not
Trigger any Device
Reverse Current I
Off–State Current I
Latching Current I
Holding Current I
R
D
L
H
Gate to Cathode
Gate–Trigger Voltage V
GT
IT = 23A, TJ = 25°C, Note 3 – – 1.75 V
T
RGK = Open Circuit – – 50 V/µs
RGK = 100Ω
VR = 400V – – 0.5 mA
VD = 400V – – 0.5 mA
TJ = 25°C – – 40 mA
TJ = 25°C – – 20 mA
VD = 6V, TJ = 25°C 1.5 – – V
VD = 6V, TJ = –40°C 2.3 – – V
– – 200 V/µs
Voltage that will not
V
GD
VD = 800V – – 250 mV
Trigger any Device
Gate–Trigger Current I
GT
VD = 6V, TJ = 25°C 15 – – mA
VD = 6V, TJ = –40°C 20 – – mA
Switching Characteristice
Gate–Controlled Turn–On Time
(t
= td + tr) when Switched
gt
from V
= 800V to IT = 40A
D
t
gt
IGT = 100mA, dIg/dt = 5A/µs,
T
= 25°C
J
Note 3. Measured under pulse conditions to avoid excessive dissipation.
– 2 – µs
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