NTE NTE5440 Datasheet

NTE5440

Silicon Controlled Rectifier (SCR)

800V, 10A, Isolated Tab

Applications:

D Temperature Control
D Motor Control
D Transformerless Power Supply Regulators
D Relay and Coil Pulsing
D Power Supply Crowbar Protection

Absolute Maximum Ratings:
Anode to Cathode

Non–Repetitive Peak Voltages (t ≤ 10ms, Note 1), V
Repetitive Peak Voltages (δ ≤ 0.01), V
Peak Working Voltages, V
Continuous Voltages, VD, V
Average On–State Current, I

DWM

R

T(AV)

, V

RWM

DRM

, V

RRM

(Averaged over any 20ms period) up to Th = +74°C 5.7A. . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS On–State Current, I
Repetitive Peak On–State Current, I
Non–Repetitive Peak On–State Current, I

T(RMS)

TRM

TSM

(t = 10ms, Half–Sinewave, TJ = +110°C prior to surge, with Reapplied V

I2t for Fusing (t = 10ms), I2t 50A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Rate of Rise of On–State Current after Triggering, dIT/dt

(IG = 50mA to IT = 20A, dIG/dt = 50mA/µs) 50A/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate to Cathode

Reverse Peak Voltage, V

RGM

Average Power Dissipation (Averaged over any 20ms period), P
Peak Power Dissipation, P

GM

Temperatures

Operating Junction Temperature, T
Storage Temperature Range, T

J

stg

Maximum Lead Temperature (During Soldering, less than 5sec) +275°C. . . . . . . . . . . . . . . . . . . .

DSM

, V

RSM

RWMmax

G(AV)

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

65A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

) 100A.

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mW. . . . . . . . . . . . . . .

5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Although not recommended, higher Off–State voltages may be applied without damage, but

the thyristor may switch into the On–State. The Rate–of–Rise of On–State current should
not exceed 15A/µs.

Absolute Maximum Ratings (Cont’d):
Isolation:

Minimum From all Three Pins to External Heatsink (Peak), V
Typical Capacitance from Anode to External Heatsink, C

Thermal Characteristics:

Thermal Resistance from Junction to External Heatsink, R

With Heatsink Compound 4.5K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Without Heatsink Compound 6.5K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance from Junction–to–Ambient in Free Air, R

(Mounted on a printed circuit board at a = any lead length

and with copper laminate, Note 2) 55K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

isol

isol

thj–h

1000V. . . . . . . . . . . . . . . . . . . . .

12pf. . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

Note 2. The quoted values of R

should be used only when no leads of other dissipating compo-

thJA

nents run to the same tie–point.

Electrical Characteristics: (TJ = +110°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Anode to Cathode

On–State Voltage V
Rate of Rise of Off–State dVD/dt

Voltage that will not

Trigger any Device
Reverse Current I
Off–State Current I
Latching Current I
Holding Current I

R
D

L

H

Gate to Cathode

Gate–Trigger Voltage V

GT

IT = 23A, TJ = 25°C, Note 3 – – 1.75 V

T

RGK = Open Circuit – – 50 V/µs
RGK = 100Ω
VR = 400V – – 0.5 mA

VD = 400V – – 0.5 mA
TJ = 25°C – – 40 mA
TJ = 25°C – – 20 mA

VD = 6V, TJ = 25°C 1.5 – – V
VD = 6V, TJ = –40°C 2.3 – – V

– – 200 V/µs

Voltage that will not

V

GD

VD = 800V – – 250 mV

Trigger any Device
Gate–Trigger Current I

GT

VD = 6V, TJ = 25°C 15 – – mA
VD = 6V, TJ = –40°C 20 – – mA

Switching Characteristice

Gate–Controlled Turn–On Time

(t

= td + tr) when Switched

gt

from V

= 800V to IT = 40A

D

t

gt

IGT = 100mA, dIg/dt = 5A/µs,
T

= 25°C

J

Note 3. Measured under pulse conditions to avoid excessive dissipation.

– 2 – µs