NTE NTE5438, NTE5437 Datasheet

NTE5437 & NTE5438

Silicon Controlled Rectifier (SCR)

8 Amp

Description:

The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed
for general purpose high voltage applications where gate sensitivity is required.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), V

NTE5437 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5438 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

On–State Current (All Conducting Angles, TC = +85°C), I
Average On–State Current (Half Cycle,  = 180°, TC = +85°C), I
Non–Repetitive On–State Current, I

TSM

T(RMS)

T(AV)

Half Cycle, 60Hz 88A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Half Cycle, 50Hz 80A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Fusing Current (t= 10ms, Half Cycle), I2t 32A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Reverse Gate Voltage (IGR = 50µA), V
Peak Gate Current (10µs Max), I
Peak Gate Dissipation (10µs Max), P
Gate Dissipation (20ms Max), P

GM

GM

G(AV)

Oprating Junction Temperature Range, T
Storage Temperature Range, T

stg

GRM

J

Lead Temperature (During Soldering, 1.6mm from case, 10sec Max), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

thJC

thJA

DRM

L

, V

RRM

8A. . . . . . . . . . . . . . . . . . . . . . . . . . .

5.1A. . . . . . . . . . . . . . . . . . . .

8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+250°C. . . . . . . . . . . . . . .

4K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Max Unit

Off–State Leakage Current I

DRM

, I

RRM

V

+ V

DRM

RGK = 1kΩ

= Rated Voltage,

RRM

TJ = +1 25°C – 0.5 mA
TJ = +25°C – 5.0 µA

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Max Unit

On–State Voltage V
On–State Threshold Voltage V
On–State Slope Resistance r
Gate Trigger Current I
Gate Trigger Voltage V
Holding Current I
Latching Current I

T(TO)

T

GT

GT

H
L

Critical Rate of Voltage Rise dv/dt VD = .67 x V

IT = 16A, TJ = +25°C – 1.95 V

T

TJ = +125°C – 1.05 V
TJ = +125°C – 65 mΩ
VD = 7V – 200 µA
VD = 7V – 2.0 V
RGK = 1kΩ – 10 mA
RGK = 1kΩ – 20 mA

, RGK = 1kΩ, TJ = +125°C 5 – V/µs

DRM

Critical Rate of Current Rise di/dt IG = 10mA, diG/dt = 0.1A/µs, TJ = +125°C 100 – A/µs
Gate Controlled Delay Time t
Commutated Turn–Off Time t

gd

q

IG = 10mA, diG/dt = 0.1A/µs – 500 ns
TC = +8 5°C, VD = .67 x V

, VR = 35V, IT = 5.1A – 100 µs

DRM

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Cathode

.100 (2.54) Anode

Anode

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Gate