NTE NTE5438, NTE5437 Datasheet
NTE5437 & NTE5438
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed
for general purpose high voltage applications where gate sensitivity is required.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Repetitive Peak Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), V
NTE5437 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5438 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
On–State Current (All Conducting Angles, TC = +85°C), I
Average On–State Current (Half Cycle, = 180°, TC = +85°C), I
Non–Repetitive On–State Current, I
TSM
T(RMS)
T(AV)
Half Cycle, 60Hz 88A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Half Cycle, 50Hz 80A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Fusing Current (t= 10ms, Half Cycle), I2t 32A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage (IGR = 50µA), V
Peak Gate Current (10µs Max), I
Peak Gate Dissipation (10µs Max), P
Gate Dissipation (20ms Max), P
GM
GM
G(AV)
Oprating Junction Temperature Range, T
Storage Temperature Range, T
stg
GRM
J
Lead Temperature (During Soldering, 1.6mm from case, 10sec Max), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
thJC
thJA
DRM
L
, V
RRM
8A. . . . . . . . . . . . . . . . . . . . . . . . . . .
5.1A. . . . . . . . . . . . . . . . . . . .
8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+250°C. . . . . . . . . . . . . . .
4K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Max Unit
Off–State Leakage Current I
DRM
, I
RRM
V
+ V
DRM
RGK = 1kΩ
= Rated Voltage,
RRM
TJ = +1 25°C – 0.5 mA
TJ = +25°C – 5.0 µA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Max Unit
On–State Voltage V
On–State Threshold Voltage V
On–State Slope Resistance r
Gate Trigger Current I
Gate Trigger Voltage V
Holding Current I
Latching Current I
T(TO)
T
GT
GT
H
L
Critical Rate of Voltage Rise dv/dt VD = .67 x V
IT = 16A, TJ = +25°C – 1.95 V
T
TJ = +125°C – 1.05 V
TJ = +125°C – 65 mΩ
VD = 7V – 200 µA
VD = 7V – 2.0 V
RGK = 1kΩ – 10 mA
RGK = 1kΩ – 20 mA
, RGK = 1kΩ, TJ = +125°C 5 – V/µs
DRM
Critical Rate of Current Rise di/dt IG = 10mA, diG/dt = 0.1A/µs, TJ = +125°C 100 – A/µs
Gate Controlled Delay Time t
Commutated Turn–Off Time t
gd
q
IG = 10mA, diG/dt = 0.1A/µs – 500 ns
TC = +8 5°C, VD = .67 x V
, VR = 35V, IT = 5.1A – 100 µs
DRM
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Cathode
.100 (2.54) Anode
Anode
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Gate
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