NTE NTE5429, NTE5428, NTE5427 Datasheet
NTE5427 thru NTE5429
Silicon Controlled Rectifier (SCR)
7 Amp
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +110°C), V
NTE5427 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5428 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5429 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Off–State Voltage (TC = +110°C), V
NTE5427 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5428 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5429 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +80°C, Conduction Angle of 180°), I
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), I
Peak Gate–Trigger Current (3µs Max), I
Peak Gate–Power Dissipation (IGT ≤ I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
opr
stg
GTM
G(AV)
GTM
), P
Typical Thermal Resistance, Junction–to–Case, R
RRM
DRM
T(RMS)
GM
thJC
TSM
7A. . . . . . . . . . . . . . . . . . .
80A. . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current
Maximum On–State Voltage V
DC Holding Current I
DC Gate–Trigger Current I
DC Gate–Trigger Voltage V
Gate Controlled Turn–On Time t
I2t for Fusing Reference I2t For SCR Protection – – 2.6 A2sec
Critical Rate of Off–State Voltage dv/dt
I
RRM
I
DRM
TM
HOLD
GT
GT
gt
(critical)
V
= Max, V
RRM
TC = +110°C, RGK = 1kΩ
IT = 7A – – 2 V
VD = 6VDC, RL = 100Ω – – 25 mA
VD = 6VDC, RL = 100Ω – – 1.5 V
IG x 3
GT
Gate Open, TC = +100°C – 100 – V/µs
DRM
= Max,
– – 1 mA
– – 1 mA
– – 50 mA
– 2 – µs
.250
(6.35)
Max
1.500
(38.1)
Min
.352 (8.95) Dia Max
.325 (8.13) Dia Max
Cathode
.019 (0.5)
Gate
Anode
45°
.031 (.793)
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