NTE NTE5426 Datasheet
NTE5426
Silicon Controlled Rectifier (SCR)
Sensitive Gate
Description:
The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device
may be switched from off–state to conduction by a current pulse applied to the gate terminal and is
designed for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TC = +110°C), V
Repetitive Peak Reverse Voltage (Gate Open, TC = +110°C), V
RMS On–State Current (TC = +80°C, 180° Conduction Angle), I
DRM
RRM
T(RMS)
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50 or 60Hz), I
Peak Gate–Trigger Current (3µs max), I
Peak Gate–Power Dissipation (IGT = I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
opr
stg
Typical Thermal Resistance, Junction–to–Case, R
GTM
G(AV)
GTM
), P
GM
thJC
TSM
–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . .
80A. . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C and “Maximum Ratings” unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current I
Maximum On–State Voltage V
Gate Trigger Current, Continuous DC I
Gate Trigger Voltage, Continuous DC V
DC Holding Current I
Turn–On Time t
Critical Rate of Rise of Off–State
Voltage
DRM
I
RRM
TM
GT
GT
H
gt
critical
dv/dt
,
Rated V
RG – K = 1kΩ
IT = Rated Amps – – 2.0 V
Anode Voltage = 12V, RL = 60Ω – – 200 µA
Anode Voltage = 12V, RL = 60Ω – – 0.8 V
Gate Open, RG – K = 1kΩ – – 3.0 mA
(td + tr) IGT = 150mA – – 2.5 µs
Gate Open, TC = +110°C,
RG – K = 1kΩ
DRM
or V
, TC = +110°C,
RRM
– – 0.1 mA
– 8 – V/µs
.147 (3.75)
Dia Max
.070 (1.78) Max
.420 (10.67)
Max
.110 (2.79)
Isol
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Cathode
.100 (2.54) Anode
Gate
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