NTE NTE5417, NTE5419, NTE5418 Datasheet
NTE5417 thru NTE5419
Silicon Controlled Rectifier (SCR)
10 Amp
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +110°C), V
RRM
NTE5417 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5418 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5419 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Off–State Voltage (TC = +110°C), V
DRM
NTE5417 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5418 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5419 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +80°C, Conduction Angle of 180°), I
T(RMS)
10A. . . . . . . . . . . . . . . . . .
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), I
TSM
100A. . . . . . . . . .
Peak Gate–Trigger Current (3µs Max), I
GTM
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate–Power Dissipation (IGT ≤ I
GTM
), P
GM
16W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, P
G(AV)
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
–40° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Case, R
thJC
2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current
I
RRM
V
RRM
= Max, V
DRM
= Max,
– – 0.5 mA
I
DRM
TC = +110°C
– – 0.5 mA
Maximum Peak On–St ate Voltage V
TM
IT = 10A – – 1.8 V
DC Holding Current I
HOLD
Gate Open – – 30 mA
DC Gate–Trigger Current I
GT
VD = 6VDC, RL = 60Ω – – 25 mA
DC Gate–Trigger Voltage V
GT
VD = 6VDC, RL = 60Ω – – 1.5 V
Gate Controlled Turn–On Time t
gt
IGT = 100mA – 2.5 – µs
Critical Rate of Off–State Voltage dv/dt
(critical)
Gate Open, TC = +100°C – 200 – V/µs
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Cathode
.100 (2.54) Anode
Gate
.147 (3.75)
Dia Max
Isolated
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