NTE NTE5416, NTE5414, NTE5413, NTE5412, NTE5415 Datasheet
NTE5411 thru NTE5416
Silicon Controlled Rectifier (SCR)
4 Amp, Sensitive Gate
Description:
The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for
high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important.
Features:
D Passivated Surface for Reliability and Uniformity
D Power Rated at Economical Prices
D Practical Level Triggering and Holding Characteristics
Absolute Maximum Ratings: (TC = +110°C unles otherwise specified)
Repetitive Peak Forward and Reverse Blocking Voltage, V
DRM
, V
RRM
(1/2 Sine Wave, RGK = 1000Ω, TC = –40° to +110°C, Note 1)
NTE5411 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5412 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5413 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5414 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5415 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5416 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak Reverse Blocking Voltage , V
RSM
(1/2 Sine Wave, RGK = 1000Ω, TC = –40° to +110°C)
NTE5411 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5412 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5413 150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5414 250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5415 450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5416 650V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average On–State Current, I
T(AV)
TC = –40° to +110°C 2.6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +100°C 1.6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge On–State Current (TC = +90°C), I
TSM
1/2 Sine wave, 60Hz 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1/2 Sine wave, 1.5ms 35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Circuit Fusing (t = 8.3ms), I2t 2.6A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power (Pulse Width = 10µs, TC = +90°C), P
GM
0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias ap-
plied to the gate concurrently with a negative potential on the anode. Devices should not
be tested with a constant current source for forward or reverse blocking capability such that
the voltage applied exceeds the rated blocking voltage.
Absolute Maximum Ratings (Cont’d): (TC = +110°C unles otherwise specified)
Average Gate Power (t = 8.2ms, TC = +90°C), P
G(AV)
0.1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current, I
GM
0.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage, V
RGM
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
–40° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Mounting Torque (Note 2) 6 in. lb.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of
6 in. lb. does not appreciably lower case–to–sink thermal resistance. Anode lead and heatsink contact pad are common.
Electrical Characteristics: (TC = +25°C, RGK = 1000Ω unles otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward or Reverse I
DRM
,
Rated V
DRM
or V
RRM
, TC = +25°C – – 10 µA
Blocking Current I
RRM
Rated V
DRM
or V
RRM
, TC = +110°C – – 200 µA
Peak Forward “ON” Voltage V
TM
ITM = 8.2A Peak, Note 3 – – 2.2 V
Gate Trigger Current
I
GT
VAK = 12V, RL = 24Ω – – 200 µA
(Continuous DC, Note 4)
VAK = 12V, RL = 24Ω, TC = –40°C – – 500 µA
Gate Trigger Voltage
(Continuous DC)
V
GT
Source Voltage = 12V, RS = 50Ω,
VAK = 12V, RL = 24Ω, TC = –40°C
– – 1 V
Gate Non–Trigger Voltage V
GD
VAK = Rated V
DRM
, RL = 100Ω,
TC = +110°C
0.2 – – V
Holding Current I
H
VAK = 12V, IGT = 2mA, TC = +25°C – – 5 mA
Initiating On–State Current = 200mA,
TC = –40°C
– – 10 mA
Total Turn–On Time t
gt
Source Voltage = 12V, RS = 6kΩ,
ITM = 8.2A, IGT = 2mA, Rated V
DRM
,
Rise Time = 20ns, Pulse Width = 10µs
– 2 – µs
Forward Voltage Application Rate dv/dt VD = Rated V
DRM
, TC = +110°C – 10 – V/µs
Note 3. Pulse Width = 1ms to 2ms, Duty Cycle = 2%.
Note 4. Measurement does not include RGK current.
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