NSC LMV243MDA, LMV243BL, LMV243BLX Datasheet

LMV243
Single-Channel, Quad-Band GSM Power Controller in
micro SMD

General Description

The device is intended for use within an RF transmit power
control loopin GSM mobile phones and supports GaAs HBT
and bipolar RF single supply power amplifiers. The circuit
operates with a single supply from 2.7V to 3.3V.

The LMV243 contains an RF detector, error amplifier, ramp
V/I converter and output driver. The LMV243 input interface
consists of the RF input, Ramp voltage, and a digital input to
perform the function ’Shutdown/Transmit Enable’. The de­vice will be active in the case TX_EN = HI, otherwise, the
device goes into a low power consumption shutdown mode.
During shutdown the output will be in high impedance
(tri-state).

A single external RC combination is used to provide stable
operations that accommodates individual PA characteristics.
The LMV243 is offered in a 8-bump micro SMD 1.5mm x

1.5mm package. This space savings package supports flex­ible product placement almost anywhere in the circuitboard.

Features

(Typical Unless Otherwise Noted)

n 50dB RF detection range (typical)
n micro SMD package 1.5mm x 1.5mm x 0.995mm
n Support of GaAs HBT, bipolar technology
n Quad-band operation
n Shutdown mode for Power Save in Rx slot
n GPRS compliant
n External loop compensation option
n Accurate temperature compensation
n Frequency range is 450MHz to 2GHz

Applications

n GSM mobile phone
n AGC for digital audio
n TDMA RF control
n Wireless LAN

Typical Application

20029034

May 2002

LMV243 Single-Channel, Quad-Band GSM Power Controller in micro SMD

© 2002 National Semiconductor Corporation DS200290 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact theNational Semiconductor SalesOffice/
Distributors for availability and specifications.

Supply Voltage

V

DD

- GND 4V Max

ESD Tolerance (Note 2)

Human Body Model 2000V

Machine Model 200V
Storage Temperature Range −65˚C to 150˚C
Junction Temperature (Note 6) 150˚C Max

Mounting Temperature

Infrared or convection (20 sec) 235˚C

Operating Ratings (Note 1)

Nominal Supply Voltage 2.7V to 3.3V
Temperature Range −40˚C

<

T

J

<

85˚C

V

RAMP

Voltage Range 0V to 2V

V

HOME

Voltage Range 0V to 2V

RF Frequency Range 450MHz to 2GHz

Electrical Characteristics Unless otherwise specified, all limits are guaranteed to T

J

= 25˚C. VDD= 2.8V.

Boldface limits apply at temperature extremes.

Symbol Parameter Condition Min Typ Max Units

I

DD

Supply Current V

OUT

=(VDD- GND)/2 8.7 10.5

12.5

mA

In Shutdown (TX_EN = 0.8V)
V

OUT

=(VDD- GND)/2

4.6 30 µA

V

HIGH

Logic Level to Enable Power (Note 7) 1.8 V

V

LOW

Logic Level to Disable Power (Note 7) 0.8 V

T

ON

Turn-on- Time from Shutdown 3.7 6.5

7.5

µs

I

EN

Current into TX_EN Pin 0.108 5 µA

RAMP Amplifier

V

RD

V

RAMP

Deadband 170

150

210 250

270

mV

1/R

RAMP

Transconductance (Note 8) 78 µa/V

I

OUT RAMP

Ramp Amplifier Output Current V

RAMP

=2V 100 140 µA

RF Input

P

IN

RF Input Power Range (Note 5) 20kΩ // 27pF between V

OUT

and V

COMP

−50
+5

dBm

−63

−7

dBV

Logarithmic Slope (Note 9)

@

900MHz, 20kΩ // 27pF

between V

OUT

and V

COMP

−1.79

µa/dB

@

1800MHz, 20kΩ // 27pF

between V

OUT

and V

COMP

−1.89

@

1900MHz, 20kΩ // 27pF

between V

OUT

and V

COMP

−1.89

Logarithmic Intercept (Note 9)

@

900MHz, 20kΩ // 27pF

between V

OUT

and V

COMP

−50.5

dBm

@

1800MHz, 20kΩ // 27pF

between V

OUT

and V

COMP

−46.9

@

1900MHz, 20kΩ // 27pF

between V

OUT

and V

COMP

−45.9

R

IN

DC Resistance (Note 8) 50 Ω

C

IN

Input Capacitance (Note 8) 0.5 pF

Error Amplifier

GBW Gain-Bandwidth Product (Note 8) 7.6 MHz

LMV243

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Electrical Characteristics Unless otherwise specified, all limits are guaranteed to T

J

= 25˚C. VDD= 2.8V.

Boldface limits apply at temperature extremes. (Continued)

Symbol Parameter Condition Min Typ Max Units

V

O

Output Swing from Rail Sourcing, IO= 5mA 55 85

105

mV

Sinking, I

O

= −5mA 45 75

95

I

O

Output Short Circuit Current
(Note 3)

Sourcing, VO=0V 25 145

mA

Sinking, V

O

= 2.8V 25 180

e

n

Output Referred Noise RF input = 1800 MHz,

-10dBm, 20kΩ // 27pF
between V

OUT

and V

COMP

,

V

OUT

=1.4V, set by V

RAMP

,

(Note 8)

700 nV/

SR Slew Rate 8

5

11 V/µs

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.

Note 2: Human body model: 1.5kΩ in series with 100pF. Machine model, 0Ω in series with 100pF.
Note 3: Shorting circuit output to either V

+

or V−will adversely affect reliability.

Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T

J=TA

. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T

J

>

TA.

Note 5: Power in dBV = dBm + 13 when the impedance is 50Ω.
Note 6: The maximum power dissipation is a function of T

J(MAX)

, θJAand TA. The maximum allowable power dissipation at any ambient temperature is PD=

(T

J(MAX)-TA

)/θJA. All numbers apply for packages soldered directly into a PC board

Note 7: All limits are guaranteed by design or statistical analysis
Note 8: Typical values represent the most likely parametric norm.
Note 9: Slope and intercept are calculated from graphs ’V

OUT

vs. RF input Power’ where the current is obtained by division of the voltage by 20kΩ.

Connection Diagram

8-Bump micro SMD

20029035

Top View

LMV243

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Pin Descriptions

Pin Name Description

Power Supply A3 V

DD

Supply Voltage

A2, C3 GND Power Ground. Operation requires both pins be grounded.
Digital Inputs C2 TX_EN A Logic High to enable device.
Analog Inputs B3 RF IN RF Input connected to the Coupler output with optional attenuation to measure the

Power Amplifier (PA) / Antenna RF power levels.

C1 RAMP IN Sets the RF output power level. The useful input voltage range is from 0.2V to 1.8V,

although voltages from 0V to V

DD

are allowed.

Compensation A1 Comp Connects an external RC network between the Comp pin and the Output pin for an

overall loop compensation and to control the closed loop frequency response.
Conventional loop stability techniques can be used in selecting this network, such as
Bode plots. A good starting value for the RC combination will be C = 68pF andR=0Ω.

Output B1 Out A rail-to-rail output capable of sourcing 25mA and sinking 25mA, with less than 200mV

total voltage drop over the specified temperature. The output is free from glitches when
enabled by TX_EN. When TX_EN is low, the output voltage is near GND.

Note: 1. All inputs and outputs are referenced to GND (pin A2, C3).

2. For the digital inputs, a LOW is

<

0.8V and a HIGH is>1.8V.

3. RF power detection is performed internally in the LMV243 and only an RF power coupler with optional extra attenuation has to be used.

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

8-Bump micro SMD

LMV243BL 01 1k Units Tape and Reel

BLA08AAC

LMV243BLX 01 3k Units tape and Reel

Block Diagram

20029036

FIGURE 1.

LMV243

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