NSC LMV111M7X, LMV111M7, LMV111M5X, LMV111M5 Datasheet
LMV111
Operational Amplifier with Bias Network
LMV111 Operational Amplifier with Bias Network
December 1999
General Description
The LMV111 integrates a rail-to-rail op amp with a V+/2 bias
circuit into one ultra tiny package, SC70-5 or SOT23-5. The
core op amp of the LMV111 is an LMV321, which provides
rail-to-rail output swing, excellent speed-power ratio, 1MHz
bandwidth, and 1V/µs of slew rate with low supply current.
The LMV111 reduces external component count. It is a cost
effective solution for applications where low voltage operation, lowpowerconsumption, space saving, and reliable performance are needed. It enables the design of small portable
electronic devices, and allows the designer to place the device closer to the signal source to reduce noise pickup and
increase signal integrity.
Connection Diagrams
Features
(For 5V Supply, Typical Unless Otherwise Noted)
n Resistor ratio matching 1%(typ)
n Space saving package SC70-5 & SOT23-5
n Industrial temp. range −40˚C to +85˚C
n Low supply current 130µA
n Gain-bandwidth product 1MHz
n Rail-to-Rail output swing
n Guaranteed 2.7V and 5V performance
Applications
n General purpose portable devices
n Active filters
n Mobile communications
n Battery powered electronics
n Microphone preamplifiers
DS101262-21
© 1999 National Semiconductor Corporation DS101262 www.national.com
Connection Diagrams (Continued)
LMV111
5-Pin SC70-5
(M7)
DS101262-19
Top View
5-Pin SOT23-5
(M5)
DS101262-20
Top View
Ordering Information
Package Part Number Marking Transport Media NSC Drawing
SC70-5
SOT23-5
LMV111M7
LMV111M7X 3k Units Tape and Reel
LMV111M5
LMV111M5X 3k Units Tape and Reel
A42
A37A
1k Units Tape and Reel
1k Units Tape and Reel
MAA05A
MA05B
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 2)
Machine Model 200V
Human Body Model 1500V
Supply Voltage (V
Output Short Circuit to V
Output Short Circuit to V
Storage Temp. Range −65˚C to 150˚C
+–V−
) 5.5V
+
−
(Note 3)
(Note 4)
Junction Temp. (T
max) (Note 5) 150˚C
J
Mounting Temperature
Infrared or Convection (20 sec) 235˚C
Operating Ratings (Note 1)
Supply Voltage 2.7V to 5.0V
Temperature Range −40˚C ≤ T
Thermal Resistance (θ
)
JA
5-pin SC70-5 478˚C/W
5-pin SOT23-5 265˚C/W
≤ 85˚C
J
LMV111
2.7V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 2.7V, V−= 0V, VO=V+/2 and R
its apply at the temperature extremes.
Symbol Parameter Conditions
V
O
Output Swing R
=
10kΩ to 1.35V V
L
Typ
(Note 6)
+
−0.01 V+−0.1 V
0.06 0.18 V
I
S
Supply Current 80 170 µA
Resistor Ratio Matching 1
GBWP Gain-Bandwidth Product C
Φ
m
G
m
Phase Margin 60 Deg
Gain Margin 10 dB
=
200pF 1 MHz
L
>
1MΩ.Boldface lim-
L
Limit
(Note 7)
Units
min
max
max
%
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 5V, V−= 0V, VO=V+/2 and R
apply at the temperature extremes.
Symbol Parameter Conditions
V
O
Output Swing RL=2kΩto 2.5V V+−0.04 V+−0.3
Typ
(Note 6)
0.12 0.3
R
= 10kΩ to 2.5V V+−0.01 V+−0.1
L
0.065 0.18
I
O
Output Current Sourcing, V
Sinking, V
I
S
Supply Current 130 250
=
OV 60 5 mA
O
=
5V 160 10 mA
O
Resistor Ratio Matching 1
GBWP Gain-Bandwidth Product C
=
200pF 1 MHz
L
φm Phase Margin 60 Deg
G
m
Gain Margin 10 dB
SR Slew Rate (Note 8) 1 V/µs
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω in series with 100pF.
>
1MΩ.Boldface limits
L
Limit
(Note 7)
+
−0.4
V
0.4
+
−0.2
V
0.28
350
Units
V
min
V
max
V
min
V
max
min
min
µA
max
%
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