NSC DS90CF383MTDX, DS90CF383MTD Datasheet

DS90CF383 +3.3V LVDS Transmitter 24-Bit Flat Panel Display (FPD) Link—65 MHz
General Description
The DS90CF383 transmitter converts 28 bits of CMOS/TTL data into four LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in par­allel with the data streams over a fifthLVDS link. Every cycle of the transmit clock 28 bits of input data are sampled and transmitted. At a transmit clock frequency of 65 MHz, 24 bits of RGB data and 3 bits of LCD timing and control data (FPLINE, FPFRAME, DRDY) are transmitted at arate of 455 Mbps per LVDS data channel. Using a 65 MHz clock, the data throughputs is 227 Mbytes/sec.
Features
n 20 to 65 MHz shift clock support n Single 3.3V supply n Chipset (Tx + Rx) power consumption
<
250 mW (typ)
n Power-down mode (
<
0.5 mW total)
n Single pixel per clock XGA (1024x768) ready n Supports VGA, SVGA, XGA and higher addressability. n Up to 227 Megabytes/sec bandwidth n Up to 1.8 Gbps throughput n Narrow bus reduces cable size and cost n 290 mV swing LVDS devices for low EMI n PLL requires no external components n Low profile 56-lead TSSOP package n Falling edge data strobe Transmitter n Compatible with TIA/EIA-644 LVDS standard n ESD rating
>
7kV
n Operating Temperature: −40˚C to +85˚C
Block Diagram
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
DS90CF383
DS100033-1
Order Number DS90CF383MTD
See NS Package Number MTD56
January 2000
DS90CF383 +3.3V LVDS Transmitter 24-Bit Flat Panel Display (FPD) Link—65 MHz
© 2000 National Semiconductor Corporation DS100033 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage (V
CC
) −0.3V to +4V
CMOS/TTL Input Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Driver Output Voltage −0.3V to (V
CC
+ 0.3V)
LVDS Output Short Circuit
Duration Continuous Junction Temperature +150˚C Storage Temperature −65˚C to +150˚C Lead Temperature
(Soldering, 4 sec) +260˚C Maximum Package Power Dissipation Capacity
@
25˚C
MTD56 (TSSOP) Package:
DS90CF383 1.63 W
Package Derating:
DS90CF383 12.5 mW/˚C above +25˚C
ESD Rating
(HBM, 1.5 k, 100 pF)
>
7kV
Recommended Operating Conditions
Min Nom Max Units
Supply Voltage (V
CC
) 3.0 3.3 3.6 V
Operating Free Air
Temperature (T
A
) −40 +25 +85 ˚C Receiver Input Range 0 2.4 V Supply Noise Voltage (V
CC
) 100 mV
PP
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
CMOS/TTL DC SPECIFICATIONS
V
IH
High Level Input Voltage 2.0 V
CC
V
V
IL
Low Level Input Voltage GND 0.8 V
V
OH
High Level Output Voltage IOH= −0.4 mA 2.7 3.3 V
V
OL
Low Level Output Voltage IOL= 2 mA 0.1 0.3 V
V
CL
Input Clamp Voltage ICL= −18 mA −0.79 −1.5 V
I
IN
Input Current VIN=VCC, GND, 2.5V or 0.4V
±
5.1±10 µA
I
OS
Output Short Circuit Current V
OUT
= 0V −60 −120 mA
LVDS DC SPECIFICATIONS
V
OD
Differential Output Voltage RL= 100 250 345 450 mV
V
OD
Change in VODbetween complimentary output states
35 mV
V
OS
Offset Voltage (Note 4) 1.125 1.25 1.375 V
V
OS
Change in VOSbetween complimentary output states
35 mV
I
OS
Output Short Circuit Current V
OUT
= 0V, RL= 100 −3.5 −5 mA
I
OZ
Output TRI-STATE®Current Power Down = 0V,
V
OUT
=0VorV
CC
±1±
10 µA
V
TH
Differential Input High Threshold VCM= +1.2V +100 mV
V
TL
Differential Input Low Threshold −100 mV
I
IN
Input Current VIN= +2.4V, VCC= 3.6V
±
10 µA
V
IN
= 0V, VCC= 3.6V
±
10 µA
TRANSMITTER SUPPLY CURRENT
ICCTW Transmitter Supply Current
Worst Case
R
L
= 100,
C
L
= 5 pF,
Worst Case Pattern
(Figures 1, 3)
f = 32.5 MHz 31 45 mA f = 37.5 MHz 32 50 mA f = 65 MHz 42 55 mA
ICCTG Transmitter Supply Current
16 Grayscale
R
L
= 100,
C
L
= 5 pF,
16 Grayscale Pattern
(Figures 2, 3)
f = 32.5 MHz 23 35 mA f = 37.5 MHz 28 40 mA f = 65 MHz 31 45 mA
ICCTZ Transmitter Supply Current
Power Down
Power Down = Low Driver Outputs in TRI-STATE®under Power Down Mode
10 55 µA
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
DS90CF383
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Electrical Characteristics (Continued)
Note 2: Typical values are given for VCC= 3.3V and TA= +25C. Note 3: Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwisespeci-
fied (except V
OD
and VOD).
Note 4: V
OS
previously referred as VCM.
Transmitter Switching Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol Parameter Min Typ Max Units
LLHT LVDS Low-to-High Transition Time
(Figure 3 )
0.75 1.5 ns
LHLT LVDS High-to-Low Transition Time
(Figure 3 )
0.75 1.5 ns
TCIT TxCLK IN Transition Time
(Figure 4 )
5ns
TCCS TxOUT Channel-to-Channel Skew
(Figure 5 )
250 ps
TPPos0 Transmitter Output Pulse Position for Bit 0
(Figure 12 )
f = 65 MHz −0.4 0 0.3 ps TPPos1 Transmitter Output Pulse Position for Bit 1 1.8 2.2 2.5 ns TPPos2 Transmitter Output Pulse Position for Bit 2 4.0 4.4 4.7 ns TPPos3 Transmitter Output Pulse Position for Bit 3 6.2 6.6 6.9 ns TPPos4 Transmitter Output Pulse Position for Bit 4 8.4 8.8 9.1 ns TPPos5 Transmitter Output Pulse Position for Bit 5 10.6 11.0 11.3 ns TPPos6 Transmitter Output Pulse Position for Bit 6 12.8 13.2 13.5 ns TCIP TxCLK IN Period
(Figure 6)
15 T 50 ns
TCIH TxCLK IN High Time
(Figure 6)
0.35T 0.5T 0.65T ns
TCIL TxCLK IN Low Time
(Figure 6)
0.35T 0.5T 0.65T ns
TSTC TxIN Setup to TxCLK IN
(Figure 6)
f = 65 MHz 2.5 ns THTC TxIN Hold to TxCLK IN
(Figure 6)
0ns
TCCD TxCLK IN to TxCLK OUT Delay 25˚C, V
CC
= 3.3V
(Figure 7 )
3 5.5 ns
TPLLS Transmitter Phase Lock Loop Set
(Figure 8 )
10 ms
TPDD Transmitter Power Down Delay
(Figure 11)
100 ns
AC Timing Diagrams
DS100033-4
FIGURE 1. “Worst Case” Test Pattern
DS90CF383
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