NSC DS14C89ATN, DS14C89ATM, DS14C89AM Datasheet
DS14C89A/DS14C89AT
Quad CMOS Receiver
DS14C89A/DS14C89AT Quad CMOS Receiver
February 1996
General Description
The DS14C89A/DS14C89AT, pin-for-pin compatible to the
DS1489A/MC1489A, are receivers designed to interface
data terminal equipment (DTE) with data circuit-terminating
equipment (DCE). These devices translate levels conforming to EIA-232E and CCITT V.28 standards to TTL/CMOS
logic levels.
The device is fabricated in low threshold CMOS metal gate
technology. The device provides very low power consumption compared to their bipolar equivalents: 900 mA
(DS14C89A) versus 26 mA (DS1489A).
The DS14C89A/DS14C89AT provide on chip noise filtering
which eliminates the need for external response control filter capacitors. When replacing the DS1489A with the
DS14C89A/DS14C89AT, the response control filter pins
can be tied high, low, or not connected.
Connection Diagram
Order Number DS14C89AN, DS14C89AM,
DS14C89ATJ, DS14C89ATN, DS14C89ATM
See NS Package Number J14A, M14A, N14A
Features
Y
Meets EIA/TIA-232-E and CCITT V.28 Standards
Y
Industrial Temperature Range
b
40§Ctoa85§C–DS14C89AT
Y
LOW Power consumption
Y
On chip noise filter
Y
Available in SOIC Package
TL/F/11106– 1
C
1996 National Semiconductor Corporation RRD-B30M36/Printed in U. S. A.
TL/F/11106
http://www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
V
CC
Input Voltage
Receiver Output Voltage (V
Junction Temperature
Continuous Power Dissipation
@
b
)a0.3V to GNDb0.3V
CC
a
25§C (Note 2)
a
6V
30V toa30V
a
150§C
N Package 1513 mW
J Package 1935 mW
M Package 1063 mW
Lead Temp. (Soldering 4 seconds)
Storage Temp. Range
ESD Ratingt1.8 kV, Typicallyt2kV
(HMB, 1.5 kX, 100 pF)
Recommended Operating
Conditions
Min Max Units
V
(GNDe0V)
CC
a
Operating Free Air Temp. (TA)
DS14C89A 0
DS14C89AT
b
4.5
40
a
a
a
b
a
260§C
65§Ctoa150§C
5.5 V
75
85
C
§
C
§
Electrical Characteristics Over recommended operating conditions, unless otherwise specified
Symbol Parameter Conditions Min Typ Max Units
V
V
V
I
IN
V
V
I
CC
Input High Threshold 1.3 2.7 V
TH
Input Low Threshold 0.5 1.9 V
TL
Typical Input Hysteresis 1.0 V
HY
Input Current V
Output High Voltage V
OH
Output Low Voltage V
OL
ea
25V V
IN
eb
V
25V
IN
ea
V
3V 0.43 1.0 mA
IN
eb
V
3V
IN
ea
V
15V V
IN
eb
V
15V
IN
ea
V
3V 0.43 1.0 mA
IN
eb
V
3V
IN
e
VTL(min) I
IN
e
VTH(max)
IN
ea
I
OUT
3.2 mA
ea
4.5V toa5.5V 3.6 8.3 mA
CC
b
3.6
b
0.43
e
0V (Power-Off) 2.14 5.0 mA
CC
(Note 4)
eb
OUT
eb
I
OUT
3.2 mA 2.8 4.0 V
20mA 3.5 4.7 V
b
2.14
b
0.43
Supply Current No Load DS14C89A 0.5 900 mA
e
V
2.7V or 0.5V
IN
DS14C89AT 0.5 2.0 mA
b
8.3 mA
b
1.0 mA
b
5.0 mA
b
1.0 mA
0.15 0.4 V
AC Electrical Characteristics
Over recommended operating conditions, unless otherwise specified, C
e
50 pF (Note 3)
I
Symbol Parameter ConditIons Min Typ Max Units
t
PLH
t
PHL
t
SK
t
r
t
f
t
nw
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The tables of ‘‘Electrical Characteristics’’ specify conditions for device operation.
Note 2: Derate N Package 12.1 mW/
Note 3: AC input waveforms for test purposes: t
Note 4: Under the power-off supply conditions it is assumed that the power supply potential drops to zero (0V) and is replaced by a low impedance or short circuit
to ground.
http://www.national.com 2
Propagation Delay Low to High Input Pulse Widtht10 ms 3.5 6.5 ms
Propagation Delay High to Low Input Pulse Widtht10 ms 3.2 6.5 ms
Typical Propagation Delay Skew 400 ns
Output Rise TIme 40 300 ns
Output Fall Time 40 300 ns
Pulse Width assumed to be Noise 1.0 ms
C, J Package 12.9 mW/§C, and M Package 8.5 mW/§C abovea25§C.
§
e
e
t
200 ns, V
r
f
IH
ea
3V, V
L
eb
3V, fe20 KHz.
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