NSC DS0026CN Datasheet
DS0026
Dual High-Speed MOS Driver
DS0026 Dual High-Speed MOS Driver
February 2000
General Description
DS0026 is a low cost monolithic high speed two phase MOS
clock driver and interface circuit. Unique circuit design provides both very high speed operation and the ability to drive
large capacitiveloads.The deviceaccepts standard TTLoutputs and converts themto MOS logic levels. The device may
be driven from standard 54/74 series and 54S/74S series
gates and flip-flops or from drivers such as the DS8830 or
DM7440. The DS0026 is intended for applications in which
the output pulse width is logically controlled; i.e., the output
pulse width is equal to the input pulse width.
The DS0026 is designed to fulfill a wide variety of MOS interface requirements. Information on the correct usage of the
DS0026 in these as well as other systems is included in the
application note AN-76.
Connection Diagrams (Top Views)
Dual-In-Line Package
Features
n Fast rise and fall times— 20 ns 1000 pF load
n High output swing —20V
n High output current drive—
n TTL compatible inputs
n High rep rate —5 to 10 MHz depending on power
dissipation
n Low power consumption in MOS “0” state— 2 mW
n Drives to 0.4V of GND for RAM address drive
±
1.5 amps
DS005853-2
Order Number DS0026CN
See NS Package Number N08E
© 2000 National Semiconductor Corporation DS005853 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
DS0026
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
+−V−
V
Differential Voltage 22V
Input Current 100 mA
Input Voltage (V
−V−) 5.5V
IN
Peak Output Current 1.5A
Electrical Characteristics (Notes 2, 3, 4)
=
*
Maximum Power Dissipation
25˚C 420mW
at T
A
Operating Temperature Range 0˚C to +70˚C
Storage Temperature Range −65˚C to +150˚C
Lead Temperature
(Soldering, 10 sec.) 300˚C
Note:*Derate N08E package 9.3 mW/˚C for TAabove 25˚C.θJ
A
=
107˚C/W
Symbol Parameter Conditions Min Typ Max Units
−
V
IH
I
IH
V
IL
I
IL
V
OL
V
OH
I
CC(ON)
I
CC(OFF)
Logic “1” Input Voltage V
Logic “1” Input Current VIN−V
Logic “0” Input Voltage V
Logic “0” Input Current VIN−V
Logic “1” Output Voltage VIN−V
Logic “0” Output Voltage VIN−V
“ON” Supply Current
(one side on)
“OFF” Supply Current V+−V
=
0V 2 1.5 V
−
=
−
=
I
OH
V+−V
V
IN
2.4V 10 15 mA
0V 0.6 0.4 V
−
=
0V −3 −10 µA
−
−
=
−1mA
−
−
−
−V
=
=
=
20V, V
=
20V,
=
2.4V, I
0.4V, V
0V
=
1mA V
OL
≥ V++ 1.0V
SS
−
=
−V
IN
2.4V
V
+
− 1.0 V+−0.8 V
−
+0.7 V−+1.0 V
30 40 mA
10 100 µA
Switching Characteristics
=
(T
25˚C) (Notes 5, 6)
A
Symbol Parameter Conditions Min Typ Max Units
t
ON
t
OFF
t
r
t
f
Note 1: “Absolute Maximum Ratings”are those values beyond which the safety of the device cannot beguaranteed. Except for “Operating Temperature Range” they
are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics provides conditions for actual device operation.
Note 2: These specifications apply for V
Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown
as max or min on absolute value basis.
Note 4: All typical values for T
Note 5: Rise and fall time are given for MOS logic levels; i.e., rise time is transition from logic “0” to logic “1” which is voltage fall.
Note 6: The high current transient (as high as 1.5A) through the resistance of the internal interconnecting V
the low state can appear as negative feedback to the input. If the external interconnecting lead from the driving circuit to V
resistance, it can subtract from the switching response.
Turn-On Delay
Turn-Off Delay
Rise Time
Fall Time
=
A
25˚C.
+−V−
(Figure 1)
(Figure 2)
(Figure 1)
(Figure 2)
(Figure 1),
(Note 5)
(Figure 2),
(Note 5)
(Figure 1),
(Note 5)
(Figure 2),
(Note 5)
=
10V to 20V, C
5 7.5 12 ns
11 ns
12 15 ns
13 ns
=
C
500 pF 15 18 ns
L
=
C
1000 pF 20 35 ns
L
=
C
500 pF 30 40 ns
L
=
C
1000 pF 36 50 ns
L
=
C
500 pF 12 16 ns
L
=
C
1000 pF 17 25 ns
L
=
C
500 pF 28 35 ns
L
=
C
1000 pF 31 40 ns
L
=
1000 pF, over the temperature range of 0˚C to +70˚C for the DS0026CN.
L
−
lead during the output transition from the high state to
−
is electrically long, or has significant dc
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Typical VBBConnection
Typical Performance Characteristics
DS0026
DS005853-8
Input Current vs Input Voltage
DS005853-22
Rise Time vs Load
Capacitance
Supply Current vs Temperature
DS005853-23
Fall Time vs Load
Capacitance
Turn-On and Turn-Off Delay
vs Temperature
DS005853-24
DS005853-25
DS005853-26
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