NSC DP8573AV, DP8573AN, DP8573AVX Datasheet

TL/F/9981
DP8573A Real Time Clock (RTC)
May 1993
DP8573A Real Time Clock (RTC)
General Description
The DP8573A is intended for use in microprocessor based systems where information is required for multi-tasking, data logging or general time of day/date information. This device is implemented in low voltage silicon gate microCMOS tech­nology to provide low standby power in battery back-up en­vironments. The circuit’s architecture is such that it looks like a contiguous block of memory or I/O ports organized as one block of 32 bytes. This includes the Control Registers, the Clock Counters, the Alarm Compare RAM, and the Time Save RAM.
Time and date are maintained from 1/100 of a second to year and leap year in a BCD format, 12 or 24 hour modes. Day of week and day of month counters are provided. Time is controlled by an on-chip crystal oscillator requiring only the addition of the 32.768 kHz crystal and two capacitors.
Power failure logic and control functions have been integrat­ed on chip. This logic is used by the RTC to issue a power fail interrupt, and lock out the mP interface. The time power fails may be logged into RAM automatically when V
BB
l
VCC. Additionally, two supply pins are provided. When V
BB
l
VCC, internal circuitry will automatically switch from the
main supply to the battery supply.
The DP8573A’s interrupt structure provides three basic types of interrupts: Periodic, Alarm/Compare, and Power Fail. Interrupt mask and status registers enable the masking and easy determination of each interrupt.
Features
Y
Full function real time clock/calendar Ð 12/24 hour mode timekeeping Ð Day of week counter Ð Parallel resonant oscillator
Y
Power fail features Ð Internal power supply switch to external battery Ð Power Supply Bus glitch protection Ð Automatic log of time into RAM at power failure
Y
On-chip interrupt structure Ð Periodic, alarm, and power fail interrupts
Block Diagram
TL/F/9981– 1
FIGURE 1
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.
Absolute Maximum Ratings (Notes1&2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
b
0.5V toa7.0V
DC Input Voltage (VIN)
b
0.5V to V
CC
a
0.5V
DC Output Voltage (V
OUT
)
b
0.5V to V
CC
a
0.5V
Storage Temperature Range
b
65§Ctoa150§C
Power Dissipation (PD) 500 mW
Lead Temperature (Soldering, 10 sec.) 260§C
Operation Conditions
Min Max Unit
Supply Voltage (V
CC
) (Note 3) 4.5 5.5 V
Supply Voltage (VBB) (Note 3) 2.2 V
CC
b
0.4 V
DC Input or Output Voltage
0.0 V
CC
V
(V
IN,VOUT
)
Operation Temperature (T
A
)
b
40
a
85
§
C
Electr-Static Discharge Rating 1 kV
Transistor Count 10,300
Typical Values
i
JA
DIP Board 59§C/W
Socket 65
§
C/W
iJAPLCC Board 80§C/W
Socket 88
§
C/W
DC Electrical Characteristics
V
CC
e
5Vg10%, V
BB
e
3V, V
PFAIL
l
VIH,C
L
e
100 pF (unless otherwise specified)
Symbol Parameter Conditions Min Max Units
V
IH
High Level Input Voltage Any Inputs Except OSC IN, 2.0 V (Note 4) OSC IN with External Clock V
BB
b
0.1 V
V
IL
Low Level Input Voltage All Inputs Except OSC IN 0.8 V
OSC IN with External Clock 0.1 V
V
OH
High Level Output Voltage I
OUT
eb
20 mAV
CC
b
0.1 V
(Excluding OSC OUT) I
OUT
eb
4.0 mA 3.5 V
V
OL
Low Level Output Voltage I
OUT
e
20 mA 0.1 V
(Excluding OSC OUT) I
OUT
e
4.0 mA 0.25 V
I
IN
Input Current (Except OSC IN) V
IN
e
VCCor GND
g
1.0 mA
I
OZ
Output TRI-STATEÉCurrent V
OUT
e
VCCor GND
g
5.0 mA
I
LKG
Output High Leakage Current V
OUT
e
VCCor GND
g
5.0 mA
T1, MFO, INTR Pins Outputs Open Drain
I
CC
Quiescent Supply Current F
OSC
e
32.768 kHz
(Note 6) V
IN
e
VCCor GND (Note 5) 250 mA
V
IN
e
VCCor GND (Note 6) 1.0 mA
V
IN
e
VIHor VIL(Note 6) 12.0 mA
I
CC
Quiescent Supply Current V
BB
e
GND
(Single Supply Mode) V
IN
e
VCCor GND 40 mA
(Note 7) F
OSC
e
32.768 kHz
I
BB
Standby Mode Battery V
CC
e
GND
10 mA
Supply Current OSC OUT
e
open circuit,
(Note 7) other pins
e
GND
F
OSC
e
32.768 kHz
I
BLK
Battery Leakage 2.2VsV
BB
s
4.0V other pins at GND V
CC
e
GND 1.5 mA
V
CC
e
5.5V
b
5 mA
Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2: Unless otherwise specified all voltages are referenced to ground.
Note 3: In battery backed mode, V
BB
s
V
CC
b
0.4V. Single Supply Mode: Data retention voltage is 2.2V min. In single Supply Mode (Power connected to V
CC
pin) 4.5VsV
CC
s
5.5V.
Note 4: This parameter (V
IH
) is not tested on all pins at the same time.
Note 5: This specification tests I
CC
with all power fail circuitry disabled, by setting D7 of Interrupt Control Register 1 to 0.
Note 6: This specification tests I
CC
with all power fail circuitry enabled, by setting D7 of Interrupt Control Register 1 to 1.
Note 7: OSC IN is driven by a signal generator. Contents of the Test Register
e
00(H) and the MFO pin is not configured as buffered oscillator out.
2
AC Electrical Characteristics
V
CC
e
5Vg10%, V
BB
e
3V, V
PFAIL
l
VIH,C
L
e
100 pF (unless otherwise specified)
Symbol Parameter Min Max Units
READ TIMING
t
AR
Address Valid Prior to Read Strobe 20 ns
t
RW
Read Strobe Width (Note 8) 80 ns
t
CD
Chip Select to Data Valid Time 80 ns
t
RAH
Address Hold after Read (Note 9) 3 ns
t
RD
Read Strobe to Valid Data 70 ns
t
DZ
Read or Chip Select to TRI-STATE 60 ns
t
RCH
Chip Select Hold after Read Strobe 0 ns
t
DS
Minimum Inactive Time between Read or Write Accesses 50 ns
WRITE TIMING
t
AW
Address Valid before Write Strobe 20 ns
t
WAH
Address Hold after Write Strobe (Note 9) 3 ns
t
CW
Chip Select to End of Write Strobe 90 ns
t
WW
Write Strobe Width (Note 10) 80 ns
t
DW
Data Valid to End of Write Strobe 50 ns
t
WDH
Data Hold after Write Strobe (Note 9) 3 ns
t
WCH
Chip Select Hold after Write Strobe 0 ns
INTERRUPT TIMING
t
ROLL
Clock rollover to INTR out typically 16.5 ms
Note 8: Read Strobe width as used in the read timing table is defined as the period when both chip select and read inputs are low. Hence read commences when both signals are low and terminates when either signal returns high.
Note 9: Hold time is guaranteed by design but not production tested. This limit is not used to calculate outgoing quality levels.
Note 10: Write Strobe width as used in the write timing table is defined as the period when both chip select and write inputs are low. Hence write commences when
both signals are low and terminates when either signal returns high.
AC Test Conditions
Input Pulse Levels GND to 3.0V Input Rise and Fall Times 6 ns (10% –90%) Input and Output
1.3V
Reference Levels TRI-STATE Reference Active High
a
0.5V
Levels (Note 12) Active Low
b
0.5V
Note 11: C
L
e
100 pF, includes jig and scope capacitance.
Note 12: S1
e
VCCfor active low to high impedance measurements.
S1
e
GND for active high to high impedance measurements.
S1
e
open for all other timing measurements.
Capacitance (T
A
e
25§C, fe1 MHz)
Symbol
Parameter
Typ Units
(Note 14)
C
IN
Input Capacitance 5 pF
C
OUT
Output Capacitance 7 pF
Note 13: This parameter is not 100% tested.
Note 14: Output rise and fall times 25 ns max (10%– 90%) with 100 pF load.
TL/F/9981– 2
3
Timing Waveforms
Read Timing Diagram
TL/F/9981– 3
Write Timing Diagram
TL/F/9981– 4
Pin Description
CS,RD,WR(Inputs): These pins interface to mP control
lines. The CS
pin is an active low enable for the read and write operations. Read and Write pins are also active low and enable reading or writing to the RTC. All three pins are disabled when power failure is detected. However, if a read or write is in progress at this time, it will be allowed to com­plete its cycle.
A0–A4 (Inputs): These 5 pins are for register selection. They individually control which location is to be accessed. These inputs are disabled when power failure is detected.
OSC IN (Input): OSC OUT (Output): These two pins are used to connect the crystal to the internal parallel resonant oscillator. The oscillator is always running when power is applied to V
BB
and VCC.
MFO (Output): The multi-function output can be used as a second interrupt (Power fail) output for interrupting the mP. This pin can also provide an output for the oscillator. The MFO output is configured as push-pull, active high for nor­mal or single power supply operation and as an open drain during standby mode (V
BB
l
VCC). If in battery backed mode and a pull-up resistor is attached, it should be con­nected to a voltage no greater than V
BB
.
INTR (Output): The interrupt output is used to interrupt the processor when a timing event or power fail has occurred and the respective interrupt has been enabled. The INTR output is permanently configured active low, open drain. If in
battery backed mode and a pull-up resistor is attached, it should be connected to a voltage no greater than V
BB
. The output is a DC voltage level. To clear the INTR, writea1to the appropriate bit(s) in the Main Status Register.
D0–D7 (Input/Output): These 8 bidirectional pins connect to the host mP’s data bus and are used to read from and write to the RTC. When the PFAIL
pin goes low and a write
is not in progress, these pins are at TRI-STATE.
PFAIL
(Input): In battery backed mode, this pin can have a
digital signal applied to it via some external power detection logic. When PFAIL
e
logic 0 the RTC goes into a lockout mode, in a minimum of 30 ms or a maximum of 63 ms unless lockout delay is programmed. In the single power supply mode, this pin is not useable as an input and should be tied to V
CC
. Refer to section on Power Fail Functional Descrip-
tion.
V
BB
(Battery Power Pin): This pin is connected to a back-
CC
becomes lower than VBB. Utiliz­ing this pin eliminates the need for external logic to switch in and out the back-up power supply. If this feature is not to be used then this pin must be tied to ground, the RTC pro­grammed for single power supply only, and power applied to the V
CC
pin.
V
CC
: This is the main system power pin.
GND: This is the common ground power pin for both V
BB
and VCC.
4
Connection Diagrams
Dual-In-Line
TL/F/9981– 5
Top View
Order Number DP8573AN
See NS Package Number N24C
Plastic Chip Carrier
TL/F/9981– 6
Top View
Order Number DP8573AV
See NS Package Number V28A
Functional Description
The DP8573A contains a fast access real time clock, inter­rupt control logic, and power fail detect logic. All functions of the RTC are controlled by a set of seven registers. A simpli­fied block diagram that shows the major functional blocks is given in
Figure 1
.
The blocks are described in the following sections:
1. Real Time Clock
2. Oscillator Prescaler
3. Interrupt Logic
4. Power Failure Logic
5. Additional Supply Management
The memory map of the RTC is shown in the memory ad­dressing table
(Figure 2).
A control bit in the Main Status
Register is used to select either control register block.
INITIAL POWER-ON of BOTH V
BB
and V
CC
VBBand VCCmay be applied in any sequence. In order for the power fail circuitry to function correctly, whenever power is off, the V
CC
pin must see a path to ground through a maximum of 1 MX. The user should be aware that the con­trol registers will contain random data. The user should en­sure that the RTC is not in test mode (see register descrip­tions).
REAL TIME CLOCK FUNCTIONAL DESCRIPTION
As shown in
Figure 2
, the clock has 8 bytes of counters, which count from 1/100 of a second to years. Each counter counts in BCD and is synchronously clocked. The count se­quence of the individual byte counters within the clock is shown later in Table VII. Note that the day of week, day of month, and month counters all roll over to 1. The hours counter in 12 hour mode rolls over to 1 and the AM/PM bit toggles when the hours rolls over to 12 (AM
e
0, PMe1).
The AM/PM bit is bit D7 in the hours counter.
TL/F/9981– 7
FIGURE 2. DP8573A Internal Memory Map
5
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