NSC DP8422VX-33, DP8422V-33 Datasheet

TL/F/11109

DP8420V/21V/22V-33, DP84T22-25 microCMOS Programmable

256k/1M/4M Dynamic RAM Controller/Drivers

May 1992

DP8420V/21V/22V-33, DP84T22-25 microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Drivers

General Description

The DP8420V/21V/22V-33, DP84T22-25 dynamic RAM controllers provide a low cost, single chip interface between dynamic RAM and all 8-, 16- and 32-bit systems. The DP8420V/21V/22V-33, DP84T22-25 generate all the required access control signal timing for DRAMs. An on-chip refresh request clock is used to automatically refresh the DRAM array. Refreshes and accesses are arbitrated on chip. If necessary, a WAIT

or DTACK output inserts wait states into system access cycles, including burst mode accesses. RAS

low time during refreshes and RAS precharge time after refreshes and back to back accesses are guaranteed through the insertion of wait states. Separate on-chip precharge counters for each RAS

output can be used for memory interleaving to avoid delayed back to back accesses because of precharge. An additional feature of the DP8422V, DP84T22 is two access ports to simplify dual accessing. Arbitration among these ports and refresh is done on chip. To make board level circuit testing easier the DP84T22 incorporates TRI-STATE

output buffers.

Features

On chip high precision delay line to guarantee critical DRAM access timing parameters

microCMOS process for low power

High capacitance drivers for RAS, CAS,WEand DRAM address on chip

On chip support for nibble, page and static column DRAMs

TRI-STATE outputs (DP84T22 only)

Byte enable signals on chip allow byte writing in a word size up to 32 bits with no external logic

Selection of controller speeds: 25 MHz and 33 MHz

On board Port A/Port B (DP8422V, DP84T22 only)/refresh arbitration logic

Direct interface to all major microprocessors (application notes available)

4 RAS and 4 CAS drivers (the RAS and CAS configuration is programmable)

of Pins

of Address

Largest Direct Drive Access

Control

(PLCC) Outputs

DRAM Memory Ports

Possible Capacity Available

DP8420V 68 9 256 kbit 4 Mbytes Single Access Port

DP8421V 68 10 1 Mbit 16 Mbytes Single Access Port

DP8422V 84 11 4 Mbit 64 Mbytes Dual Access Ports (A and B)

DP84T22 84 11 4 Mbit 64 Mbytes Dual Access and TRI-STATE

Block Diagram

DP8420V/21V/22V, DP74T22 DRAM Controller

TL/F/11109– 1

FIGURE 1

TRI-STATEÉis a registered trademark of National Semiconductor Corporation. Staggered Refresh

is a trademark of National Semiconductor Corporation.

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Table of Contents

1.0 INTRODUCTION

2.0 SIGNAL DESCRIPTIONS

2.1 Address, R/W and Programming Signals

2.2 DRAM Control Signals

2.3 Refresh Signals

2.4 Port A Access Signals

2.5 Port B Access Signals (DP8422V, DP84T22)

2.6 Common Dual Port Signals (DP8422V, DP84T22)

2.7 Power Signals and Capacitor Input

2.8 Clock Inputs

3.0 PROGRAMMING AND RESETTING

3.1 External Reset

3.2 Programming Methods

3.2.1 Mode Load Only Programming

3.2.2 Chip Selected Access Programming

3.3 Internal Programming Modes

4.0 PORT A ACCESS MODES

4.1 Access Mode 0

4.2 Access Mode 1

4.3 Extending CAS with Either Access Mode

4.4 Read-Modify-Write Cycles with Either Access Mode

4.5 Additional Access Support Features

4.5.1 Address Latches and Column Increment

4.5.2 Address Pipelining

4.5.3 Delay CAS

during Write Accesses

5.0 REFRESH OPTIONS

5.1 Refresh Control Modes

5.1.1 Automatic Internal Refresh

5.1.2 Externally Controlled/Burst Refresh

5.1.3 Refresh Request/Acknowledge

5.2 Refresh Cycle Types

5.2.1 Conventional Refresh

5.2.2 Staggered Refresh

5.2.3 Error Scrubbing Refresh

5.3 Extending Refresh

5.4 Clearing the Refresh Address Counter

5.5 Clearing the Refresh Request Clock

6.0 PORT A WAIT STATE SUPPORT

6.1 WAIT

Type Output

6.2 DTACK

Type Output

6.3 Dynamically Increasing the Number of Wait States

6.4 Guaranteeing RAS

Low Time and RAS Precharge

Time

7.0 RAS

AND CAS CONFIGURATION MODES

7.1 Byte Writing

7.2 Memory Interleaving

7.3 Address Pipelining

7.4 Error Scrubbing

7.5 Page/Burst Mode

8.0 TEST MODE

9.0 DRAM CRITICAL TIMING PARAMETERS

9.1 Programmable Values of t

RAH

and t

ASC

9.2 Calculation of t

RAH

and t

ASC

10.0 DUAL ACCESSING (DP8422V and DP84T22V)

10.1 Port B Access Mode

10.2 Port B Wait State Support

10.3 Common Port A and Port B Dual Port Functions

10.3.1 GRANTB Output

10.3.2 LOCK

Input

10.4 TRI-STATE Outputs (DP84T22 Only)

11.0 ABSOLUTE MAXIMUM RATINGS

12.0 DC ELECTRICAL CHARACTERISTICS

13.0 AC TIMING PARAMETERS

14.0 FUNCTIONAL DIFFERENCES BETWEEN THE DP8420V/21V/22V, DP84T22 AND THE DP8420/21/22

15.0 DP8420V/21V/22V, DP84T22 USER HINTS

1.0 Introduction

The DP8420V/21V/22V, DP84T22 are CMOS Dynamic RAM controllers that incorporate many advanced features which include address latches, refresh counter, refresh clock, row, column and refresh address multiplexer, delay line, refresh/access arbitration logic and high capacitive drivers. The programmable system interface allows any manufacturer’s microprocessor or bus to directly interface via the DP8420V/21V/22V, DP84T22 to DRAM arrays up to 64 Mbytes in size.

After power up, the user must first reset and program the DP8420V/21V/22V, DP84T22 before accessing the DRAM. The chip is programmed through the address bus.

Reset:

Due to the differences in power supplies, an External (hardware) Reset must be performed before programming the chip.

Programming:

After resetting the chip, the user can program the controller by either one of two methods: Mode Load Only Programming or Chip Select Access Programming.

Initialization Period:

Once the DP8420V/21V/22V, DP84T22 has been programmed for the first time, a 60 ms initialization period is entered. During this time the DRC performs refreshes to the DRAM array so further warm up cycles are unnecessary. The initialization period is entered only after the first programming after a reset.

Accessing Modes:

After resetting and programming the chip, the DP8420V/21V/22V, DP84T22 is ready to access the DRAM. There are two modes of accessing with these controllers. Mode 0, which indicates RAS

synchronously and

Mode 1, which indicates RAS

asynchronously.

Refresh Modes:

The DP8420V/21V/22V, DP84T22 have expanded refresh capabilities compared to previous DRAM controllers. There are three modes of refreshing available: Internal Automatic Refreshing, Externally Controlled/Burst Refreshing and Refresh Request/Acknowledge Refreshing. Any of these modes can be used together or separately to achieve the desired results.

Refresh Types:

These controllers have three types of refreshing available: Conventional, Staggered and Error Scrubbing. Any refresh control mode can be used with any type of refresh.

Wait Support:

The DP8420V/21V/22V, DP84T22 have wait support available as DTACK

or WAIT. Both are programmable. DTACK, Data Transfer ACKnowledge, is useful for processors whose wait signal is active high. WAIT

is useful for those processors whose wait signal is active low. The user can choose either at programming. These signals are used by the on chip arbiter to insert wait states to guarantee the arbitration between accesses, refreshes and precharge. Both signals are independent of the access mode chosen and both signals can be dynamically delayed further through the WAITIN

signal to the DP8420V/21V/22V, DP84T22.

Sequential Accesses (Static Column/Page Mode):

The DP8420V/21V/22V, DP84T22 have address latches, used to latch the bank, row and column address inputs.

Once the address is latched, a COLumn INCrement (COLINC) feature can be used to increment the column address. The address latches can also be programmed to be fall through. COLINC can be used for Sequential Accesses of Static Column DRAMs. Also, COLINC in conjunction with ECAS

inputs can be used for Sequential Accesses to Page

Mode DRAMs.

RAS

and CAS Configuration (Byte Writing):

The RAS and CAS drivers can be configured to drive a one, two or four bank memory array up to 32 bits in width. The ECAS

signals can then be used to select one of four CAS

drivers for Byte Writing with no extra logic.

Memory Interleaving:

When configuring the DP8420V/21V/22V, DP84T22 for more than one bank, Memory Interleaving can be used. By tying the low order address bits to the bank select lines B0 and B1, sequential back to back accesses will not be delayed since these controllers have separate precharge counters per bank.

Address Pipelining:

The DP8420V/21V/22V, DP84T22 are capable of performing Address Pipelining. In address pipelining, the DRC will guarantee the column address hold time and switch the internal multiplexor to place the row address on the address bus. At this time, another memory access to another bank can be initiated.

Dual Accessing:

The DP8422V, DP84T22 have all the features previously mentioned and unlike the DP8420V/21V, the DP8422V, DP84T22 have a second port to allow a second CPU to access the same memory array. The DP8422V, DP84T22 have four signals to support Dual Accessing, these signals are AREQB

, ATACKB, LOCK and GRANTB. All arbitration for the two ports and refresh is done on chip by the controller through the insertion of wait states. Since the DP8422V, DP84T22 have only one input address bus, the address lines must be multiplexed externally. The signal GRANTB can be used for this purpose.

TRI-STATE Outputs:

The DP84T22 implements TRI-STATE outputs. When the input OE

is asserted the output buffers are enabled, when

is negated, logic 1, the output buffers at TRI-STATE

(high Z).

Terminology:

The following explains the terminology used in this data sheet. The terms negated and asserted are used. Asserted refers to a ‘‘true’’ signal. Thus, ‘‘ECAS0

asserted’’ means

the ECAS0

input is at a logic 0. The term ‘‘COLINC asserted’’ means the COLINC input is at a logic 1. The term negated refers to a ‘‘false’’ signal. Thus, ‘‘ECAS0

negated’’

means the ECAS0

input is at a logic 1. The term ‘‘COLINC negated’’ means the input COLINC is at a logic 0. The table shown below clarifies this terminology.

Signal Action Logic Level

Active High Asserted High

Active High Negated Low

Active Low Asserted Low

Active Low Negated High

Connection Diagrams

TL/F/11109– 2

Top View

FIGURE 2

Order Number DP8420V-33

See NS Package Number V68A

TL/F/11109– 3

Top View

FIGURE 3

Order Number DP8421V-33

See NS Package Number V68A

TL/F/11109– 4

Top View

FIGURE 4

Order Number DP8422V-33 or DP84T22-25

See NS Package Number V84A

2.0 Signal Descriptions

Pin Device (If Not Input/

Description

Name Applicable to All) Output

2.1 ADDRESS, R/W AND PROGRAMMING SIGNALS

R0–10 DP8422V/T22 I ROW ADDRESS: These inputs are used to specify the row address during an access

to the DRAM. They are also used to program the chip when ML

is asserted (except

R0–9 DP8420V/21V I

R10).

C0–10 DP8422V/T22 I COLUMN ADDRESS: These inputs are used to specify the column address during an

access to the DRAM. They are also used to program the chip when ML

is asserted

C0–9 DP8420V/21V I

(except C10).

B0, B1 I BANK SELECT: Depending on programming, these inputs are used to select a group

of RAS and CAS outputs to assert during an access. They are also used to program the chip when ML

is asserted.

ECAS0–3 I ENABLE CAS: These inputs are used to enable a single or group of CAS outputs

when asserted. In combination with the B0, B1 and the programming bits, these inputs select which CAS

output or CAS outputs will assert during an access. The

ECAS

signals can also be used to toggle a group of CAS outputs for page/nibble

mode accesses. They also can be used for byte write operations. If ECAS

0is

negated during programming, continuing to assert the ECAS

0 while negating AREQ or AREQB during an access, will cause the CAS outputs to be extended while the RAS

outputs are negated (the ECASn inputs have no effect during scrubbing

refreshes).

WIN I WRITE ENABLE IN: This input is used to signify a write operation to the DRAM. If

ECAS

0 is asserted during programming, the WE output will follow this input. This

input asserted will also cause CAS

to delay to the next positive clock edge if address

bit C9 is asserted during programming.

COLINC I COLUMN INCREMENT: When the address latches are used, and RFIP is negated,

this input functions as COLINC. Asserting this signal causes the column address to

(EXTNDRF) I

be incremented by one. When RFIP

is asserted, this signal is used to extend the

refresh cycle by any number of periods of CLK until it is negated.

ML I MODE LOAD: This input signal, when low, enables the internal programming register

that stores the programming information.

2.2 DRAM CONTROL SIGNALS

Q0–10 DP8422V/T22 O DRAM ADDRESS: These outputs are the multiplexed output of the R0 – 9, 10 and

C0–9, 10 and form the DRAM address bus. These outputs contain the refresh

Q0–9 DP8421V O

address whenever RFIP

is asserted. They contain high capacitive drivers with 20X

Q0–8 DP8421V O

series damping resistors.

RAS0–3 O ROW ADDRESS STROBES: These outputs are asserted to latch the row address

contained on the outputs Q0–8, 9, 10 into the DRAM. When RFIP

is asserted, the

RAS

outputs are used to latch the refresh row address contained on the Q0–8, 9, 10 outputs in the DRAM. These outputs contain high capacitive drivers with 20X series damping resistors.

CAS0–3 O COLUMN ADDRESS STROBES: These outputs are asserted to latch the column

address contained on the outputs Q0–8, 9, 10 into the DRAM. These outputs have high capacitive drivers with 20X series damping resistors.

WE O WRITE ENABLE or REFRESH REQUEST: This output asserted specifies a write

operation to the DRAM. When negated, this output specifies a read operation to the

(RFRQ

DRAM. When the controller is programmed in address pipelining mode or when ECAS0 is negated during programming, this output will function as RFRQ. When asserted, this pin specifies that 13 msor15ms have passed. If DISRFSH

is negated, the DP8420V/21V/22V, DP84T22 will perform an internal refresh as soon as possible. If DISRFRSH

is asserted, RFRQ can be used to externally request a refresh

through the input RFSH

. This output has a high capacitive driver and a 20X series

damping resistor.

OE DP84T22 I OUTPUT ENABLE: This input asserted, enables the output buffers for the row,

column RASs, CASs and WE. If this input is disabled, logic 1, the output buffers are at

(Only)

TRI-STATE facilitating the board level circuit testing.

2.0 Signal Descriptions (Continued)

Pin Device (If Not Input/

Description

Name Applicable to All) Output

2.3 REFRESH SIGNALS

RFIP O REFRESH IN PROGRESS: This output is asserted prior to a refresh cycle and is

negated when all the RAS

outputs are negated for that refresh.

RFSH I REFRESH: This input asserted with DISRFRSH already asserted will request a

refresh. If this input is continually asserted, the DP8420V/21V/22V, DP84T22 will perform refresh cycles in a burst refresh fashion until the input is negated. If RFSH

asserted with DISRFSH

negated, the internal refresh address counter is cleared

(useful for burst refreshes).

DISRFSH I DISABLE REFRESH: This input is used to disable internal refreshes and must be

asserted when using RFSH

for externally requested refreshes.

2.4 PORT A ACCESS SIGNALS

ADS I ADDRESS STROBE or ADDRESS LATCH ENABLE: Depending on programming,

this input can function as ADS

or ALE. In mode 0, the input functions as ALE and

(ALE) I

when asserted along with CS

causes an internal latch to be set. Once this latch is set an access will start from the positive clock edge of CLK as soon as possible. In Mode 1, the input functions as ADS

and when asserted along with CS, causes the access RAS

to assert if no other event is taking place. If an event is taking place, RAS will be asserted from the positive edge of CLK as soon as possible. In both cases, the low going edge of this signal latches the bank, row and column address if programmed to do so.

CS I CHIP SELECT: This input signal must be asserted to enable a Port A access.

AREQ I ACCESS REQUEST: This input signal in Mode 0 must be asserted some time after

the first positive clock edge after ALE has been asserted. When this signal is negated, RAS

is negated for the access. In Mode 1, this signal must be asserted

before ADS

can be negated. When this signal is negated, RAS is negated for the

access.

WAIT O WAIT or DTACK: This output can be programmed to insert wait states into a CPU

access cycle. With R7 negated during programming, the output will function as a

(DTACK

WAIT

type output. In this case, the output will be active low to signal a wait condition.

With R7 asserted during programming, the output will function as DTACK

. In this case, the output will be negated to signify a wait condition and will be asserted to signify the access has taken place. Each of these signals can be delayed by a number of positive clock edges or negative clock levels of CLK to increase the microprocessor’s access cycle through the insertion of wait states.

WAITIN I WAIT INCREASE: This input can be used to dynamically increase the number of

positive clock edges of CLK until DTACK

will be asserted or WAIT will be negated

during a DRAM access.

2.0 Signal Descriptions (Continued)

Pin Device (If Not Input/

Description

Name Applicable to All) Output

2.5 PORT B ACCESS SIGNALS

AREQB DP8422V/T22 I PORT B ACCESS REQUEST: This input asserted will latch the row, column and bank

address if programmed, and requests an access to take place for Port B. If the

only

access can take place, RAS

will assert immediately. If the access has to be delayed,

RAS

will assert as soon as possible from a positive edge of CLK.

ATACKB DP8422V/T22 O ADVANCED TRANSFER ACKNOWLEDGE PORT B: This output is asserted when

the access RAS

is asserted for a Port B access. This signal can be used to generate

only

the appropriate DTACK

or WAIT type signal for Port B’s CPU or bus.

2.6 COMMON DUAL PORT SIGNALS

GRANTB DP8422V/T22 O GRANT B: This output indicates which port is currently granted access to the DRAM

array. When GRANTB is asserted, Port B has access to the array. When GRANTB is

only

negated, Port A has access to the DRAM array. This signal is used to multiplex the signals R0–8, 9, 10; C0 –8, 9, 10; B0 – 1; WIN

; LOCK and ECAS0 – 3 to the DP8422V

when using dual accessing.

LOCK DP8422V/T22 I LOCK: This input can be used by the currently granted port to ‘‘lock out’’ the other

port from the DRAM array by inserting wait states into the locked out port’s access

only

cycle until LOCK is negated.

2.7 POWER SIGNALS AND CAPACITOR INPUT

I POWER: Supply Voltage.

GND I GROUND: Supply Voltage Reference.

CAP I CAPACITOR: This input is used by the internal PLL for stabilization. The value of the

ceramic capacitor should be 0.1 mF and should be connected between this input and ground.

2.8 CLOCK INPUTS

There are two clock inputs to the DP8420V/21V/22V, DP84T22 CLK and DELCLK. These two clocks may both be tied to the same clock input, or they may be two separate clocks, running at different frequencies, asynchronous to each other.

CLK I SYSTEM CLOCK: This input may be in the range of 0 Hz up to 33 MHz (up to 25 MHz

in the DP84T22V). This input is generally a constant frequency but it may be controlled externally to change frequencies or perhaps be stopped for some arbitrary period of time. This input provides the clock to the internal state machine that arbitrates between accesses and refreshes. This clock’s positive edges and negative levels are used to extend the WAIT

(DTACK) signals. This clock is also used as the reference for the

RAS

precharge time and RAS low time during refresh. All Port A and Port B accesses are assumed to be synchronous to the system clock CLK.

DELCLK I DELAY LINE CLOCK: The clock input DELCLK, may be in the range of 6 MHz to

20 MHz and should be a multiple of 2 (i.e., 6, 8, 10, 12, 14, 16, 18, 20 MHz) to have the DP8420V/21V/22V, DP84T22 switching characteristics hold. If DELCLK is not one of the above frequencies the accuracy of the internal delay line will suffer. This is because the phase locked loop that generates the delay line assumes an input clock frequency of a multiple of 2 MHz. For example, if the DELCLK input is at 7 MHz and we choose a divide by 3 (program bits C0–2) this will produce 2.333 MHz which is 16.667% off of 2 MHz. Therefore, the DP8420V/21V/22V, DP84T22 delay line would produce delays that are shorter (faster delays) than what is intended. If divide by 4 was chosen the delay line would be longer (slower delays) than intended (1.75 MHz instead of 2 MHz). (See Section 9 for more information.) This clock is also divided to create the internal refresh clock.

3.0 Programming and Resetting

Due to the variety in power supplies power-up times, an EXTERNAL RESET must be performed before the DRAM controller can be programmed and used.

After going through the reset procedure, the DP8420V/ 21V/22V, DP84T22 can be programmed by either of two methods; Mode Load Only Programming or Chip Select Access Programming. After programming the DRC for the first time after reset, the chip enters a 60 ms initialization period, during this period the controller performs refreshes every 13 msor15ms, this makes further DRAM warm up cycles unnecessary. After this stage the chip can be reprogrammed as many times as the user wishes and the 60 ms period will not be entered into unless the chip is reset and programmed again.

During the 60 ms initialization period, RFIP

is asserted low

and RAS

toggles every 13 msor15ms depending on the

programming bit for refresh (C3). CAS

will be inactive (logic

1) and the ‘‘Q’’ outputs will count from 0 to 2047 refreshing the entire DRAM array. The actual initialization time period is given by the following formula. T

4096* (Clock Divisor

Select)* (Refresh Clock Fine Tune)/(DELCLK Frq.)

3.1 EXTERNAL RESET

At power up, if the internal power up reset worked, all internal latches and flip-flops are cleared and the part is ready to be programmed. The power up state can also be achieved by performing an External Reset, which is required to insure proper operation. External Reset is achieved by asserting ML

and DISRFSH for at least 16 positive clock edges. In

order to perform simply a Reset, the ML

signal must be

negated before DISRFSH

is negated as shown in

Figure 5a

. This procedure will only reset the controller which now is ready for programming.

While performing an External Reset, if the user negates DISRFSH

at least one clock period before negating ML,as

shown in

Figure 5b

,MLnegated will program the DP8420V/ 21V/22V, DP84T22 with the values in R0 –9, C0–9, B0– 1 and ECAS0. The 60 ms initialization period will be entered since it is the first programming after reset. This is a good way of resetting and programming the part at the same time. Make sure the right programming bits are on the address bus before ML

is negated.

The DRC may be programmed any time on the fly, but the user must make sure that No Access or Refresh is in progress. Reset is asynchronous.

TL/F/11109– 5

FIGURE 5a. Chip Reset but Not Programmed

TL/F/11109– 6

FIGURE 5b. Chip Reset and Programmed

3.0 Programming and Resetting (Continued)

3.2 PROGRAMMING METHODS

3.2.1 Mode Load Only Programming

To use this method the user asserts ML

enabling the inter-

nal programming register. After ML

is asserted, a valid programming selection is placed on the address bus, B0, B1 and ECAS0

inputs, then ML is negated. When ML is negated the programming bits are latched into the internal programming register and the DP8420V/21V/22V, DP84T22 is programmed, see

Figure 6

. When programming the chip,

the controller must not be refreshing, RFIP

must be high (1)

to have a successful programming.

3.2.2 Chip Selected Access Programming

The chip can also be programmed by performing a chip selected access. To program the chip using this method, ML

is asserted, then CS is asserted and a valid program-

ming selection is placed on the address bus. When AREQ

is asserted, the programming bits affecting the wait logic become effective immediately, then DTACK

is asserted allow-

ing the access to terminate. After the access, ML

is negated

and the rest of the programming bits take effect.

TL/F/11109– 7

FIGURE 6. ML Only Programming

TL/F/11109– 8

FIGURE 7. CS Access Programming

3.0 Programming and Resetting (Continued)

3.3 PROGRAMMING BIT DEFINITIONS

Symbol Description

ECAS0 Extend CAS/Refresh Request Select

0 The CASn outputs will be negated with the RASn outputs when AREQ (or AREQB, DP8422V, DP84T22 only) is

negated. The WE

output pin will function as write enable.

1 The CASn outputs will be negated, during an acccess (Port A (or Port B, DP8422V, DP84T22 only)) when their

corresponding ECAS

n inputs are negated. This feature allows the CAS outputs to be extended beyond the RAS outputs negating. Scrubbing refreshes are NOT affected. During scrubbing refreshes the CAS outputs will negate along with the RAS

outputs regardless of the state of the ECAS inputs.

The WE output will function as ReFresh ReQuest (RFRQ) when this mode is programmed.

B1 Access Mode Select

0 ACCESS MODE 0: ALE pulsing high sets an internal latch. On the next positive edge of CLK, the access (RAS)

will start. AREQ

will terminate the access.

1 ACCESS MODE 1: ADS asserted starts the access (RAS) immediately. AREQ will terminate the access.

B0 Address Latch Mode

0 ADS or ALE asserted for Port A or AREQB asserted for Port B with the appropriate GRANT latch the input row,

column and bank address.

1 The row, column and bank latches are fall through.

C9 Delay CAS during WRITE Accesses

0 CAS is treated the same for both READ and WRITE accesses.

1 During WRITE accesses, CAS will be asserted by the event that occurs last: CAS asserted by the internal delay

line or CAS

asserted on the positive edge of CLK after RAS is asserted.

C8 Row Address Hold Time

0 Row Address Hold Timee25 ns minimum

1 Row Address Hold Time

15 ns minimum

C7 Column Address Setup Time

0 Column Address Setup Timee10 ns miniumum

1 Column Address Setup Timee0 ns minimum

C6, C5, C4 RAS

and CAS Configuration Modes/Error Scrubbing during Refresh

0, 0, 0 RAS0– 3 and CAS0 –3 are all selected during an access. ECASn must be asserted for CASn to be asserted.

B0 and B1 are not used during an access. Error scrubbing during refresh.

0, 0, 1 RAS

and CAS pairs are selected during an access by B1. ECASn must be asserted for CASn to be asserted.

0 during an access selects RAS0– 1 and CAS0–1. B1e1 during an access selects RAS2– 3 and CAS2–3. B0 is not used during an Access. Error scrubbing during refresh.

0, 1, 0 RAS and CAS singles are selected during an access by B0 – 1. ECAS

n must be asserted for CASn to be asserted.

0, B0e0 during an access selects RAS0 and CAS0. B1

0, B0e1 during an access selects RAS1 and CAS1. B1

1, B0e0 during an access selects RAS2 and CAS2. B1e1, B0e1 during an access selects RAS3 and CAS3. Error scrubbing during refresh.

0, 1, 1 RAS

0–3 and CAS0 –3 are all selected during an access. ECASn must be asserted for CASn to be asserted. B1, B0 are not used during an access. No error scrubbing. (RAS

only refreshing)

1, 0, 0 RAS pairs are selected by B1. CAS0 – 3 are all selected. ECASn must be asserted for CASn to be asserted.

0 during an access selects RAS0– 1 and CAS0–3. B1e1 during an access selects RAS2– 3 and CAS0–3. B0 is not used during an access. No error scrubbing.

3.0 Programming and Resetting (Continued)

3.3 PROGRAMMING BIT DEFINITIONS (Continued)

Symbol Description

C6, C5, C4 RAS and CAS Configuration Modes (Continued)

1, 0, 1 RAS and CAS pairs are selected by B1. ECASn must be asserted for CASn to be asserted.

0 during an access selects RAS0– 1 and CAS0–1.

1 during an access selects RAS2– 3 and CAS2–3. B0 is not used during an access. No error scrubbing.

1, 1, 0 RAS singles are selected by B0 – 1. CAS0–3 are all selected. ECASn must be asserted for CASntobe

asserted. B1

0, B0e0 during an access selects RAS0 and CAS0–3. B1

0, B0e1 during an access selects RAS1 and CAS0–3. B1

1, B0e0 during an access selects RAS2 and CAS0–3. B1

1, B0e1 during an access selects RAS3 and CAS0–3. No error scrubbing.

1, 1, 1 RAS and CAS singles are selected by B0, 1. ECASn must be asserted for CASn to be asserted.

0, B0e0 during an access selects RAS0 and CAS0. B1

0, B0e1 during an access selects RAS1 and CAS1. B1

1, B0e0 during an access selects RAS2 and CAS2. B1

1, B0e1 during an access selects RAS3 and CAS3. No error scrubbing.

C3 Refresh Clock Fine Tune Divisor

0 Divide delay line/refresh clock further by 30 (If DELCLK/Refresh Clock Clock Divisore2 MHze15 ms

refresh period).

1 Divide delay line/refresh clock further by 26 (If DELCLK/Refresh Clock Clock Divisor

2 MHze13 ms

refresh period).

C2, C1, C0 Delay Line/Refresh Clock Divisor Select

0, 0, 0 Divide DELCLK by 10 to get as close to 2 MHz as possible. 0, 0, 1 Divide DELCLK by 9 to get as close to 2 MHz as possible. 0, 1, 0 Divide DELCLK by 8 to get as close to 2 MHz as possible. 0, 1, 1 Divide DELCLK by 7 to get as close to 2 MHz as possible. 1, 0, 0 Divide DELCLK by 6 to get as close to 2 MHz as possible. 1, 0, 1 Divide DELCLK by 5 to get as close to 2 MHz as possible. 1, 1, 0 Divide DELCLK by 4 to get as close to 2 MHz as possible. 1, 1, 1 Divide DELCLK by 3 to get as close to 2 MHz as possible.

R9 Refresh Mode Select

0 RAS0–3 will all assert and negate at the same time during a refresh. 1 Staggered Refresh. RAS

outputs during refresh are separated by one positive clock edge. Depending on the

configuration mode chosen, either one or two RAS

s will be asserted.

R8 Address Pipelining Select

0 Address pipelining is selected. The DRAM controller will switch the DRAM column address back to the row

address after guaranteeing the column address hold time.

1 Non-address pipelining is selected. The DRAM controller will hold the column address on the DRAM address

bus until the access RAS

s are negated.

R7 WAIT or DTACK Select

0 WAIT type output is selected. 1 DTACK

(Data Transfer ACKnowledge) type output is selected.

R6 Add Wait States to the Current Access if WAITIN is Low

0 WAIT or DTACK will be delayed by one additional positive edge of CLK. 1 WAIT

or DTACK will be delayed by two additional positive edges of CLK.

3.0 Programming and Resetting (Continued)

3.3 PROGRAMMING BIT DEFINITIONS (Continued)

Symbol Description

R5, R4 WAIT/DTACK during Burst (See Section 5.1.2 or 5.2.2)

0, 0 NO WAIT STATES; If R7e0 during programming, WAIT will remain negated during burst portion of access.

If R7

1 programming, DTACK will remain asserted during burst portion of access.

0, 1 1T; If R7e0 during programming, WAIT will assert when the ECAS inputs are negated with AREQ asserted.

WAIT

will negate from the positive edge of CLK after the ECASs have been asserted. If R7e1 during programming, DTACK will negate when the ECAS inputs are negated with AREQ asserted. DTACK

will assert from the positive edge of CLK after the ECASs have been asserted.

1, 0 (/2T; If R7e0 during programming, WAIT will assert when the ECAS inputs are negated with AREQ asserted.

WAIT

will negate on the negative level of CLK after the ECASs have been asserted. If R7

1 during programming, DTACK will negate when the ECAS inputs are negated with AREQ asserted.

DTACK

will assert from the negative level of CLK after the ECASs have been asserted.

1, 1 0T; If R7e0 during programming, WAIT will assert when the ECAS inputs are negated. WAIT will negate when

the ECAS

inputs are asserted. If R7e1 during programming, DTACK will negate when the ECAS inputs are negated. DTACK will assert when the ECAS

inputs are asserted.

R3, R2 WAIT/DTACK Delay Times (See Section 5.1.1 or 5.2.1)

0, 0 NO WAIT STATES; If R7e0 during programming, WAIT will remain high during non-delayed accesses. WAIT

will negate when RAS is negated during delayed accesses. NO WAIT STATES; If R7

1 during programming, DTACK will be asserted when RAS is asserted.

0, 1 (/2T; If R7e0 during programming, WAIT will negate on the negative level of CLK, after the access RAS.

1T; If R7e1 during programming, DTACK will be asserted on the positive edge of CLK after the access RAS.

1, 0 NO WAIT STATES, (/2T; If R7

0 during programming, WAIT will remain high during non-delayed accesses.

WAIT

will negate on the negative level of CLK, after the access RAS, during delayed accesses.

(/2T; If R7

1 during programming, DTACK will be asserted on the negative level of CLK after the access RAS.

1, 1 1T; If R7e0 during programming, WAIT will negate on the positive edge of CLK after the access RAS.

1(/2T; If R7

1 during programming, DTACK will be asserted on the negative level of CLK after the positive edge

of CLK after the access RAS

R1, R0 RAS Low and RAS Precharge Time

0, 0 RAS asserted during refreshe2 positive edges of CLK.

RAS

precharge timee1 positive edge of CLK.

RAS

will start from the first positive edge of CLK after GRANTB transitions (DP8422V, DP84T22).

0, 1 RAS

asserted during refreshe3 positive edges of CLK.

RAS

precharge timee2 positive edges of CLK.

RAS

will start from the second positive edge of CLK after GRANTB transitions (DP8422V, DP84T22).

1, 0 RAS asserted during refreshe2 positive edges of CLK.

RAS

precharge timee2 positive edges of CLK.

RAS

will start from the first positive edge of CLK after GRANTB transitions (DP8422V, DP84T22).

1, 1 RAS asserted during refreshe4 positive edges of CLK.

RAS

precharge timee3 positive edges of CLK.

RAS

will start from the second positive edge of CLK after GRANTB transitions (DP8422V, DP84T22).

4.0 Port A Access Modes

The DP8420V/21V/22V, DP84T22 have two general purpose access modes. Mode 0 RAS

synchronous and Mode 1

RAS

asynchronous. One of these modes is selected at pro-

gramming through the B1 input. A Port A access to DRAM is initiated by two input signals: ADS

(ALE) and CS. The ac-

cess is always terminated by one signal: AREQ

. These input

signals should be synchronous to the input clock.

4.1 ACCESS MODE 0

Mode 0, synchronous access, is selected by negating the input B1 during programming (B1

0). To initiate a Mode 0

access, ALE is pulse high and CS

is asserted. If precharge time was met, a refresh of DRAM or a Port B access was not in progress, the RAS

(RASs) would be asserted on the

first rising edge of clock. If a refresh or a Port B access is in progress or precharge time is required, the controller will wait until these events have taken place and assert RAS (RASs) on the next positive edge of clock.

Sometime after the first positive edge of clock after ALE and CS

have been asserted, the input AREQ must be asserted.

In single port applications, once AREQ

is asserted, CS can be negated. On the other hand, ALE can stay asserted several periods of clock; however, ALE must be negated before or during the period of CLK in which AREQ

is negated.

The controller samples AREQ on the every rising edge of clock after DTACK

is asserted. The access will end when

AREQ

is sampled negated.

TL/F/11109– 9

FIGURE 8a. Access Mode 0

4.0 Port A Access Modes (Continued)

4.2 ACCESS MODE 1

Mode 1, asynchronous access, is selected by asserting the input B1 during programming (B1

1). This mode allows accesses to start immediately from the access request input, ADS

. To initiate a Mode 1 access, CS is asserted followed

by ADS

asserted. If precharge time was met, a refresh of the DRAM or a Port B access was not in progress, the RAS (RASs) would be asserted from ADS being asserted. If a refresh or Port B access is in progress or precharge time is required, the controller will wait until these events have tak-

en place and assert RAS

(RASs) from the next rising edge

of clock.

When ADS

is asserted or sometime after, AREQ must be

asserted. At this time, ADS

can be negated and AREQ will

continue the access. Also, ADS

can continue to be asserted

after AREQ

has been asserted and negated; however, a

new access will not start until ADS

is negated and asserted again. When address pipelining is not implemented, ADS and AREQ can be tied together.

The access will end when AREQ is negated.

TL/F/11109– 10

FIGURE 8b. Access Mode 1

4.0 Port A Access Modes (Continued)

4.3 EXTENDING CAS WITH EITHER ACCESS MODE

In both access modes, once AREQ

is negated, RAS and

DTACK

if programmed will be negated. If ECAS0 was as-

serted (0) during programming, CAS

(CASs) will be negated

with AREQ

. If ECAS0 was negated (1) during programming,

CAS

(CASs) will continue to be asserted after RAS has

been negated, given that the appropriate ECAS

inputs are asserted. This allows a DRAM to have data present on the data out bus while gaining RAS

precharge time.

TL/F/11109– 11

FIGURE 9a. Access Mode 0 Extending CAS

TL/F/11109– 12

FIGURE 9b. Access Mode 1 Extending CAS

4.0 Port A Access Modes (Continued)

4.4 READ-MODIFY-WRITE CYCLES WITH EITHER ACCESS MODE

There are 2 methods by which this chip can be used to do read-modify-write access cycles. The first method involves doing a late write access where the WIN

input is asserted

some delay after CAS

is asserted. The second method involves doing a page mode read access followed by a page mode write access with RAS

held low (see

Figure 9c

CASn must be toggled using the ECASn inputs and WIN has to be changed from negated to asserted (read to write)

while CAS

is negated. This method is better than changing

WIN

from negated to asserted in a late write access because here a problem may arise with DATA IN and DATA OUT being valid at the same time. This may result in a data line trying to drive two different levels simultaneously. The page mode method of a read-modify-write access allows the user to have transceivers in the system because the data in (read data) is guaranteed to be high impedance during the time the data out (write data) is valid.

TL/F/11109– 13

*There may be idle states inserted here by the CPU.

FIGURE 9c. Read-Modify-Write Access Cycle

4.0 Port A Access Modes (Continued)

4.5 ADDITIONAL ACCESS SUPPORT FEATURES

To support the different modes of accessing, the DP8420V/ 21V/22V, DP84T22 offer other access features. These additional features include: Address Latches and Column Increment (for page/burst mode support), Address Pipelining, and Delay CAS

(to allow the user with a multiplexed bus to

ensure valid data is present before CAS

is asserted).

4.5.1 Address Latches and Column Increment

The Address Latches can be programmed, through programming bit B0. They can be programmed to either latch the address or remain in a fall-through mode. If the address latches are used to latch the address, the controller will function as follows:

In Mode 0, the rising edge of ALE places the latches in fallthrough, once ALE is negated, the address present in the row, column and bank input is latched.

In Mode 1, the address latches are in fall through mode until ADS

is asserted. ADS asserted latches the address.

Once the address is latched, the column address can be incremented with the input COLINC. COLINC can be used for sequential accesses of static column DRAMs. COLINC can also be used with the ECAS

inputs to support sequen-

tial accesses to page mode DRAMs as shown in

Figure 10

COLINC should only be asserted when the signal RFIP

is negated during an access since this input functions as extended refresh when RFIP

is asserted. COLINC must be

negated (0) when the address is being latched (ADS

falling edge in Mode 1). If COLINC is asserted with all of the bits of the column address asserted (ones), the column address will return to zero.

TL/F/11109– 14

FIGURE 10. Column Increment

The address latches function differently with the DP8422V, DP84T22. The DP8422V, DP84T22 will latch the address of the currently granted port. If Port A is currently granted, the address will be latched as described in Section 4.5.1. If Port A is not granted, and requests an access, the address will be latched on the first or second positive edge of CLK after GRANTB has been negated depending on the programming bits R0, R1.

For Port B, if GRANTB is asserted, the address will be latched with AREQB

asserted. If GRANTB is negated, the address will latch on the first or second positive edge of CLK after GRANTB is asserted depending on the programming bits R0, R1.

4.0 Port A Access Modes (Continued)

4.5.2 Address Pipelining

Address pipelining is the overlapping of accesses to different banks of DRAM. If the majority of successive accesses are to a different bank, the accesses can be overlapped. Because of this overlapping, the cycle time of the DRAM accesses are greatly reduced. The DP8420V/21V/22V, DP84T22 can be programmed to allow a new row address to be placed on the DRAM address bus after the column address hold time has been met. At this time, a new access can be initiated with ADS

or ALE, depending on the access

mode, while AREQ

is used to sustain the current access. The DP8422V and DP84T22 support address pipelining for Port A only. This mode cannot be used with page, static column or nibble modes of operations because the DRAM column address is switched back to the row address after CAS

is asserted. This mode is programmed through ad-

dress bit R8 (see

Figures 11a

and

11b

). In this mode, the

output WE

always functions as RFRQ.

During address pipelining in Mode 0, shown in

Figure 11c

, ALE cannot be pulsed high to start another access until AREQ

has been asserted for the previous access for at

least one period of CLK. DTACK

, if programmed, will be

negated once AREQ

is negated. WAIT, if programmed to

insert wait states, will be asserted once ALE and CS

are

asserted.

In Mode 1, shown in

Figure 11d

, ADS can be negated once

AREQ

is asserted. After meeting the minimum negated

pulse width for ADS

, ADS can again be asserted to start a

new access. DTACK

, if programmed, will be negated once

AREQ

is negated. WAIT, if programmed, will be asserted

once ADS

is asserted.

In either mode with either type of wait programmed, the DP8420V/21V/22V, DP84T22 will still delay the access for precharge if sequential accesses are to the same bank or if a refresh takes place.

TL/F/11109– 15

FIGURE 11a. Non-Address Pipelined Mode

TL/F/11109– 16

FIGURE 11b. Address Pipelined Mode

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