NSC DM5420W-883, DM5420W-MLS, DM5420J-883 Datasheet

TL/F/6506
5420/DM5420/DM7420 Dual 4-Input NAND Gates
June 1989
5420/DM5420/DM7420 Dual 4-Input NAND Gates
General Description
This device contains two independent gates each of which performs the logic NAND function.
Y
Alternate Military/Aerospace device (5420) is available. Contact a National Semiconductor Sales Office/Distrib­utor for specifications.
Connection Diagram
Dual-In-Line Package
TL/F/6506– 1
Order Number 5420DMQB, 5420FMQB, DM5420J, DM5420W or DM7420N
See NS Package Number J14A, N14A or W14B
Function Table
YeABCD
Inputs Output
ABCD Y
XXXL H XXLX H XLXX H LXXX H HHHH L
HeHigh Logic Level
L
e
Low Logic Level
X
e
Either Low or High Logic Level
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Absolute Maximum Ratings (Note)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Supply Voltage 7V
Input Voltage 5.5V
Operating Free Air Temperature Range
DM54 and 54
b
55§Ctoa125§C
DM74 0
§
Ctoa70§C
Storage Temperature Range
b
65§Ctoa150§C
Note:
The ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaran­teed. The device should not be operated at these limits. The parametric values defined in the ‘‘Electrical Characteristics’’ table are not guaranteed at the absolute maximum ratings. The ‘‘Recommended Operating Conditions’’ table will define the conditions for actual device operation.
Recommended Operating Conditions
Symbol Parameter
DM5402 DM7402
Units
Min Nom Max Min Nom Max
V
CC
Supply Voltage 4.5 5 5.5 4.75 5 5.25 V
V
IH
High Level Input Voltage 2 2 V
V
IL
Low Level Input Voltage 0.8 0.8 V
I
OH
High Level Output Current
b
0.4
b
0.4 mA
I
OL
Low Level Output Current 16 16 mA
T
A
Free Air Operating Temperature
b
55 125 0 70
§
C
Electrical Characteristics over recommended operating free air temperature range (unless otherwise noted)
Symbol Parameter Conditions Min
Typ
Max Units
(Note 1)
V
I
Input Clamp Voltage V
CC
e
Min, I
I
eb
12 mA
b
1.5 V
V
OH
High Level Output V
CC
e
Min, I
OH
e
Max
2.4 3.4 V
Voltage V
IL
e
Max
V
OL
Low Level Output V
CC
e
Min, I
OL
e
Max
0.2 0.4 V
Voltage V
IH
e
Min
I
I
Input Current@Max V
CC
e
Max, V
I
e
5.5V 1mA
Input Voltage
I
IH
High Level Input Current V
CC
e
Max, V
I
e
2.4V 40 mA
I
IL
Low Level Input Current V
CC
e
Max, V
I
e
0.4V
b
1.6 mA
I
OS
Short Circuit V
CC
e
Max DM54
b
20
b
55
mA
Output Current (Note 2)
DM74
b
18
b
55
I
CCH
Supply Current with V
CC
e
Max
24mA
Outputs High
I
CCL
Supply Current with V
CC
e
Max
611mA
Outputs Low
Switching Characteristics at V
CC
e
5V and T
A
e
25§C (See Section 1 for Test Waveforms and Output Load)
Symbol Parameter Conditions Min Max Units
t
PLH
Propagation Delay Time C
L
e
15 pF
22 ns
Low to High Level Output R
L
e
400X
t
PHL
Propagation Delay Time
15 ns
High to Low Level Output
Note 1: All typicals are at V
CC
e
5V, T
A
e
25§C.
Note 2: Not more than one output should be shorted at a time.
2
Physical Dimensions inches (millimeters)
14-Lead Ceramic Dual-In-Line Package (J)
Order Number 5420DMQB or DM5420J
NS Package Number J14A
14-Lead Molded Dual-In-Line Package (N)
Order Number DM7420N
NS Package Number N14A
3
5420/DM5420/DM7420 Dual 4-Input NAND Gates
Physical Dimensions inches (millimeters) (Continued)
14-Lead Ceramic Flat Package (W)
Order Number 5420FMQB or DM5420W
NS Package Number W14B
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